JPWO2023032706A1 - - Google Patents

Info

Publication number
JPWO2023032706A1
JPWO2023032706A1 JP2023545446A JP2023545446A JPWO2023032706A1 JP WO2023032706 A1 JPWO2023032706 A1 JP WO2023032706A1 JP 2023545446 A JP2023545446 A JP 2023545446A JP 2023545446 A JP2023545446 A JP 2023545446A JP WO2023032706 A1 JPWO2023032706 A1 JP WO2023032706A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023545446A
Other languages
Japanese (ja)
Other versions
JP7623094B2 (ja
JPWO2023032706A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023032706A1 publication Critical patent/JPWO2023032706A1/ja
Publication of JPWO2023032706A5 publication Critical patent/JPWO2023032706A5/ja
Application granted granted Critical
Publication of JP7623094B2 publication Critical patent/JP7623094B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2023545446A 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置 Active JP7623094B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021142969 2021-09-02
JP2021142969 2021-09-02
PCT/JP2022/031324 WO2023032706A1 (ja) 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2023032706A1 true JPWO2023032706A1 (https=) 2023-03-09
JPWO2023032706A5 JPWO2023032706A5 (https=) 2024-05-16
JP7623094B2 JP7623094B2 (ja) 2025-01-28

Family

ID=85412240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023545446A Active JP7623094B2 (ja) 2021-09-02 2022-08-19 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置

Country Status (5)

Country Link
US (1) US20240387176A1 (https=)
JP (1) JP7623094B2 (https=)
KR (1) KR20240046917A (https=)
CN (1) CN117836903A (https=)
WO (1) WO2023032706A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163323A (ja) * 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
WO2021131711A1 (ja) * 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021106197A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021114534A (ja) * 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163323A (ja) * 2001-11-27 2003-06-06 Sony Corp 回路モジュール及びその製造方法
WO2021131711A1 (ja) * 2019-12-26 2021-07-01 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2021106197A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2021114534A (ja) * 2020-01-17 2021-08-05 凸版印刷株式会社 配線基板および配線基板の製造方法

Also Published As

Publication number Publication date
US20240387176A1 (en) 2024-11-21
TW202338911A (zh) 2023-10-01
JP7623094B2 (ja) 2025-01-28
WO2023032706A1 (ja) 2023-03-09
CN117836903A (zh) 2024-04-05
KR20240046917A (ko) 2024-04-11

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