JPWO2022038456A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022038456A5 JPWO2022038456A5 JP2022543813A JP2022543813A JPWO2022038456A5 JP WO2022038456 A5 JPWO2022038456 A5 JP WO2022038456A5 JP 2022543813 A JP2022543813 A JP 2022543813A JP 2022543813 A JP2022543813 A JP 2022543813A JP WO2022038456 A5 JPWO2022038456 A5 JP WO2022038456A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor
- insulator
- oxidizing gas
- stopping
- introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2026003842A JP2026050481A (ja) | 2020-08-21 | 2026-01-13 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020139814 | 2020-08-21 | ||
| JP2020139814 | 2020-08-21 | ||
| JP2020195884 | 2020-11-26 | ||
| JP2020195884 | 2020-11-26 | ||
| PCT/IB2021/057249 WO2022038456A1 (ja) | 2020-08-21 | 2021-08-06 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026003842A Division JP2026050481A (ja) | 2020-08-21 | 2026-01-13 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022038456A1 JPWO2022038456A1 (https=) | 2022-02-24 |
| JPWO2022038456A5 true JPWO2022038456A5 (https=) | 2024-08-14 |
| JP7805298B2 JP7805298B2 (ja) | 2026-01-23 |
Family
ID=80323452
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022543813A Active JP7805298B2 (ja) | 2020-08-21 | 2021-08-06 | 半導体装置の作製方法 |
| JP2026003842A Pending JP2026050481A (ja) | 2020-08-21 | 2026-01-13 | 半導体装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2026003842A Pending JP2026050481A (ja) | 2020-08-21 | 2026-01-13 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12575348B2 (https=) |
| JP (2) | JP7805298B2 (https=) |
| KR (1) | KR20230053616A (https=) |
| CN (1) | CN115917038A (https=) |
| WO (1) | WO2022038456A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12295163B2 (en) | 2021-12-16 | 2025-05-06 | Asm Ip Holding B.V. | Formation of gate stacks comprising a threshold voltage tuning layer |
| TW202442909A (zh) * | 2023-04-24 | 2024-11-01 | 南韓商秀博瑞殷股份有限公司 | 低溫沉積膜形成方法、藉由該方法製備的半導體基板及半導體組件 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780704B1 (en) * | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
| JP3863391B2 (ja) | 2001-06-13 | 2006-12-27 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置 |
| JP2009170439A (ja) | 2008-01-10 | 2009-07-30 | Panasonic Corp | ゲート絶縁膜の形成方法 |
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011078398A1 (en) | 2009-12-25 | 2011-06-30 | Ricoh Company, Ltd. | Field-effect transistor, semiconductor memory, display element, image display device, and system |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| KR20120064966A (ko) | 2010-12-10 | 2012-06-20 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
| WO2013150920A1 (ja) | 2012-04-05 | 2013-10-10 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び基板処理システム |
| US10242989B2 (en) | 2014-05-20 | 2019-03-26 | Micron Technology, Inc. | Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods |
| US9685542B2 (en) | 2014-12-30 | 2017-06-20 | Qualcomm Incorporated | Atomic layer deposition of P-type oxide semiconductor thin films |
| JP2016157881A (ja) | 2015-02-26 | 2016-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| JP6725357B2 (ja) | 2015-08-03 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| KR102523344B1 (ko) | 2015-11-25 | 2023-04-20 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2018078227A (ja) | 2016-11-11 | 2018-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| CN109087674A (zh) | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | 铁电内存及其数据读取、写入与制造方法和电容结构 |
| JP7066585B2 (ja) | 2018-09-19 | 2022-05-13 | キオクシア株式会社 | 記憶装置 |
| US10978563B2 (en) | 2018-12-21 | 2021-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11211461B2 (en) | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| US11289475B2 (en) | 2019-01-25 | 2022-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| JP7512255B2 (ja) | 2019-03-29 | 2024-07-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US12082390B2 (en) | 2019-03-29 | 2024-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2020240332A1 (ja) | 2019-05-31 | 2020-12-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN116157903A (zh) | 2020-08-27 | 2023-05-23 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
| TW202210653A (zh) | 2020-09-07 | 2022-03-16 | 日商半導體能源研究所股份有限公司 | 金屬氧化物膜、半導體裝置以及其製造方法 |
-
2021
- 2021-08-06 CN CN202180051208.4A patent/CN115917038A/zh active Pending
- 2021-08-06 WO PCT/IB2021/057249 patent/WO2022038456A1/ja not_active Ceased
- 2021-08-06 KR KR1020237006652A patent/KR20230053616A/ko active Pending
- 2021-08-06 JP JP2022543813A patent/JP7805298B2/ja active Active
- 2021-08-06 US US18/041,726 patent/US12575348B2/en active Active
-
2026
- 2026-01-13 JP JP2026003842A patent/JP2026050481A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009246365A5 (https=) | ||
| CN103681671B (zh) | 具有钨栅电极的半导体器件及其制造方法 | |
| TWI737612B (zh) | 用於均勻且共形之混成氧化鈦薄膜的沉積方法 | |
| JP5103056B2 (ja) | 半導体装置の製造方法 | |
| TWI338376B (en) | Capacitor with zirconium oxide and method for fabricating the same | |
| JP2005109450A (ja) | 高誘電率膜の堆積のための界面層を制御するための方法 | |
| JP2010506408A5 (https=) | ||
| JP2009545138A5 (https=) | ||
| TW200702475A (en) | Plasma treatment of hafnium-containing materials | |
| US20150140838A1 (en) | Two Step Deposition of High-k Gate Dielectric Materials | |
| US20120261803A1 (en) | High-k gate dielectric material and method for preparing the same | |
| JP7539774B2 (ja) | 反応チャンバーにおいて循環堆積プロセスにより基材上に酸化ハフニウムランタン膜を堆積させるための方法 | |
| US9281463B2 (en) | Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants | |
| JPWO2022038456A5 (https=) | ||
| JP6946463B2 (ja) | ワードライン抵抗を低下させる方法 | |
| KR20100003164A (ko) | 반도체 장치 제조방법 | |
| US20210210529A1 (en) | Thin film transistor, method for manufacturing thereof and display device | |
| JP2024536801A5 (https=) | ||
| JPWO2022038450A5 (https=) | ||
| CN101326620B (zh) | 基板处理方法、基板处理装置和基板处理系统 | |
| JP2022510866A (ja) | 基板上にｐ型酸化物層を堆積するための方法及びシステム | |
| CN117418215A (zh) | 一种原子层沉积工艺的镀膜方法 | |
| KR102933366B1 (ko) | 원자층 퇴적법에 의한 산화이트륨 함유 박막의 제조 방법 | |
| JPWO2021130600A5 (https=) | ||
| JP2007123662A (ja) | 半導体装置の製造方法および半導体装置 |