JP2024536801A5 - - Google Patents
Info
- Publication number
- JP2024536801A5 JP2024536801A5 JP2024517574A JP2024517574A JP2024536801A5 JP 2024536801 A5 JP2024536801 A5 JP 2024536801A5 JP 2024517574 A JP2024517574 A JP 2024517574A JP 2024517574 A JP2024517574 A JP 2024517574A JP 2024536801 A5 JP2024536801 A5 JP 2024536801A5
- Authority
- JP
- Japan
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163246006P | 2021-09-20 | 2021-09-20 | |
| US63/246,006 | 2021-09-20 | ||
| PCT/US2022/043701 WO2023043950A1 (en) | 2021-09-20 | 2022-09-15 | Germanium and silicon stacks for 3d nand |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024536801A JP2024536801A (ja) | 2024-10-08 |
| JP2024536801A5 true JP2024536801A5 (https=) | 2025-09-19 |
| JPWO2023043950A5 JPWO2023043950A5 (https=) | 2025-09-19 |
Family
ID=85573593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024517574A Pending JP2024536801A (ja) | 2021-09-20 | 2022-09-15 | ３ｄ ｎａｎｄのためのゲルマニウムおよびシリコンスタック |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230090426A1 (https=) |
| JP (1) | JP2024536801A (https=) |
| KR (1) | KR102921296B1 (https=) |
| CN (1) | CN118215985A (https=) |
| TW (1) | TW202333358A (https=) |
| WO (1) | WO2023043950A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240363357A1 (en) * | 2023-04-27 | 2024-10-31 | Applied Materials, Inc. | Methods for bow compensation using tensile nitride |
| WO2025169766A1 (ja) * | 2024-02-09 | 2025-08-14 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、及び基板処理方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6962850B2 (en) * | 2003-10-01 | 2005-11-08 | Chartered Semiconductor Manufacturing Ltd. | Process to manufacture nonvolatile MOS memory device |
| JP2008258488A (ja) | 2007-04-06 | 2008-10-23 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| WO2009006272A1 (en) * | 2007-06-28 | 2009-01-08 | Advanced Technology Materials, Inc. | Precursors for silicon dioxide gap fill |
| US9330899B2 (en) * | 2012-11-01 | 2016-05-03 | Asm Ip Holding B.V. | Method of depositing thin film |
| JP6784969B2 (ja) | 2015-10-22 | 2020-11-18 | 天馬微電子有限公司 | 薄膜デバイスとその製造方法 |
| US10923344B2 (en) * | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| KR20210024423A (ko) * | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| CN112593212B (zh) * | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
-
2022
- 2022-09-15 WO PCT/US2022/043701 patent/WO2023043950A1/en not_active Ceased
- 2022-09-15 JP JP2024517574A patent/JP2024536801A/ja active Pending
- 2022-09-15 CN CN202280069231.0A patent/CN118215985A/zh active Pending
- 2022-09-15 KR KR1020247012952A patent/KR102921296B1/ko active Active
- 2022-09-19 US US17/947,318 patent/US20230090426A1/en active Pending
- 2022-09-20 TW TW111135468A patent/TW202333358A/zh unknown