KR102921296B1 - 3d nand를 위한 게르마늄 및 실리콘 스택들 - Google Patents

3d nand를 위한 게르마늄 및 실리콘 스택들

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Publication number
KR102921296B1
KR102921296B1 KR1020247012952A KR20247012952A KR102921296B1 KR 102921296 B1 KR102921296 B1 KR 102921296B1 KR 1020247012952 A KR1020247012952 A KR 1020247012952A KR 20247012952 A KR20247012952 A KR 20247012952A KR 102921296 B1 KR102921296 B1 KR 102921296B1
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material layer
containing precursor
germanium
semiconductor processing
forming
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KR20240056650A (ko
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시은 채
서스밋 싱하 로이
아비짓 바수 말리크
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어플라이드 머티어리얼스, 인코포레이티드
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • H01J37/32431—Constructional details of the reactor
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
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    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020247012952A 2021-09-20 2022-09-15 3d nand를 위한 게르마늄 및 실리콘 스택들 Active KR102921296B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163246006P 2021-09-20 2021-09-20
US63/246,006 2021-09-20
PCT/US2022/043701 WO2023043950A1 (en) 2021-09-20 2022-09-15 Germanium and silicon stacks for 3d nand

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KR20240056650A KR20240056650A (ko) 2024-04-30
KR102921296B1 true KR102921296B1 (ko) 2026-02-02

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Country Link
US (1) US20230090426A1 (https=)
JP (1) JP2024536801A (https=)
KR (1) KR102921296B1 (https=)
CN (1) CN118215985A (https=)
TW (1) TW202333358A (https=)
WO (1) WO2023043950A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240363357A1 (en) * 2023-04-27 2024-10-31 Applied Materials, Inc. Methods for bow compensation using tensile nitride
WO2025169766A1 (ja) * 2024-02-09 2025-08-14 東京エレクトロン株式会社 成膜装置、成膜方法、及び基板処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050074939A1 (en) 2003-10-01 2005-04-07 Chartered Semiconductor Manufacturing Ltd. Process to manufacture nonvolatile MOS memory device
US20080248644A1 (en) 2007-04-06 2008-10-09 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor device with a porous dielectric film
US20170117498A1 (en) 2015-10-22 2017-04-27 Nlt Technologies, Ltd. Thin-film device and manufacturing method thereof
US20190131124A1 (en) 2017-10-30 2019-05-02 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009006272A1 (en) * 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US9330899B2 (en) * 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
KR20210024423A (ko) * 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
CN112593212B (zh) * 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050074939A1 (en) 2003-10-01 2005-04-07 Chartered Semiconductor Manufacturing Ltd. Process to manufacture nonvolatile MOS memory device
US20080248644A1 (en) 2007-04-06 2008-10-09 Oki Electric Industry Co., Ltd. Method of fabricating a semiconductor device with a porous dielectric film
US20170117498A1 (en) 2015-10-22 2017-04-27 Nlt Technologies, Ltd. Thin-film device and manufacturing method thereof
US20190131124A1 (en) 2017-10-30 2019-05-02 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures

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Publication number Publication date
WO2023043950A1 (en) 2023-03-23
KR20240056650A (ko) 2024-04-30
JP2024536801A (ja) 2024-10-08
CN118215985A (zh) 2024-06-18
US20230090426A1 (en) 2023-03-23
TW202333358A (zh) 2023-08-16

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