JP2022533388A5 - - Google Patents
Info
- Publication number
- JP2022533388A5 JP2022533388A5 JP2021568761A JP2021568761A JP2022533388A5 JP 2022533388 A5 JP2022533388 A5 JP 2022533388A5 JP 2021568761 A JP2021568761 A JP 2021568761A JP 2021568761 A JP2021568761 A JP 2021568761A JP 2022533388 A5 JP2022533388 A5 JP 2022533388A5
- Authority
- JP
- Japan
- Prior art keywords
- gas precursor
- substrate
- pulsed
- etching chamber
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962852023P | 2019-05-23 | 2019-05-23 | |
| US62/852,023 | 2019-05-23 | ||
| PCT/US2020/024472 WO2020236303A1 (en) | 2019-05-23 | 2020-03-24 | In-situ atomic layer deposition process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022533388A JP2022533388A (ja) | 2022-07-22 |
| JP2022533388A5 true JP2022533388A5 (https=) | 2023-04-05 |
| JP7539927B2 JP7539927B2 (ja) | 2024-08-26 |
Family
ID=73456146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021568761A Active JP7539927B2 (ja) | 2019-05-23 | 2020-03-24 | ｉｎ－ｓｉｔｕ原子層堆積プロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20200373149A1 (https=) |
| JP (1) | JP7539927B2 (https=) |
| KR (1) | KR102830858B1 (https=) |
| CN (1) | CN113906539A (https=) |
| TW (1) | TWI901587B (https=) |
| WO (1) | WO2020236303A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11521849B2 (en) * | 2018-07-20 | 2022-12-06 | Applied Materials, Inc. | In-situ deposition process |
| US11508572B2 (en) * | 2020-04-01 | 2022-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN114121641A (zh) * | 2020-08-28 | 2022-03-01 | 东京毅力科创株式会社 | 晶片处理方法和等离子体处理装置 |
| US11970769B2 (en) * | 2021-06-24 | 2024-04-30 | Asm Ip Holding B.V. | Cyclical deposition methods |
| KR20250042780A (ko) * | 2022-07-22 | 2025-03-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 실리콘 기재의 유전체 필름을 퇴적하는 방법 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7399388B2 (en) * | 2003-07-25 | 2008-07-15 | Applied Materials, Inc. | Sequential gas flow oxide deposition technique |
| US7629270B2 (en) * | 2004-08-27 | 2009-12-08 | Asm America, Inc. | Remote plasma activated nitridation |
| US7651961B2 (en) * | 2007-03-30 | 2010-01-26 | Tokyo Electron Limited | Method for forming strained silicon nitride films and a device containing such films |
| JP2011023718A (ja) * | 2009-07-15 | 2011-02-03 | Asm Japan Kk | ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法 |
| US8728956B2 (en) * | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| US20140273530A1 (en) * | 2013-03-15 | 2014-09-18 | Victor Nguyen | Post-Deposition Treatment Methods For Silicon Nitride |
| WO2015126590A1 (en) * | 2014-02-18 | 2015-08-27 | Applied Materials, Inc. | Hermetic cvd-cap with improved step coverage in high aspect ratio structures |
| KR20170019668A (ko) * | 2015-08-12 | 2017-02-22 | (주)디엔에프 | 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법 |
| WO2017033979A1 (ja) * | 2015-08-26 | 2017-03-02 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| US9627221B1 (en) * | 2015-12-28 | 2017-04-18 | Asm Ip Holding B.V. | Continuous process incorporating atomic layer etching |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10703915B2 (en) * | 2016-09-19 | 2020-07-07 | Versum Materials Us, Llc | Compositions and methods for the deposition of silicon oxide films |
| US10832908B2 (en) | 2016-11-11 | 2020-11-10 | Lam Research Corporation | Self-aligned multi-patterning process flow with ALD gapfill spacer mask |
| US10134579B2 (en) * | 2016-11-14 | 2018-11-20 | Lam Research Corporation | Method for high modulus ALD SiO2 spacer |
| JP6804277B2 (ja) | 2016-11-30 | 2020-12-23 | 東京エレクトロン株式会社 | 処理方法および処理装置 |
| US10600648B2 (en) | 2017-04-20 | 2020-03-24 | Lam Research Corporation | Silicon-based deposition for semiconductor processing |
| US20180371612A1 (en) * | 2017-06-27 | 2018-12-27 | Wonik Materials Co., Ltd. | Low Temperature Process for Forming Silicon-Containing Thin Layer |
| US10269559B2 (en) * | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US10658174B2 (en) * | 2017-11-21 | 2020-05-19 | Lam Research Corporation | Atomic layer deposition and etch for reducing roughness |
| CN120608873A (zh) * | 2018-09-28 | 2025-09-09 | 朗姆研究公司 | 避免沉积副产物积聚的真空泵保护 |
-
2020
- 2020-03-24 CN CN202080037396.0A patent/CN113906539A/zh active Pending
- 2020-03-24 KR KR1020217041882A patent/KR102830858B1/ko active Active
- 2020-03-24 WO PCT/US2020/024472 patent/WO2020236303A1/en not_active Ceased
- 2020-03-24 JP JP2021568761A patent/JP7539927B2/ja active Active
- 2020-03-26 US US16/831,217 patent/US20200373149A1/en not_active Abandoned
- 2020-05-13 TW TW109115854A patent/TWI901587B/zh active
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