JPWO2022038450A5 - - Google Patents

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Publication number
JPWO2022038450A5
JPWO2022038450A5 JP2022543808A JP2022543808A JPWO2022038450A5 JP WO2022038450 A5 JPWO2022038450 A5 JP WO2022038450A5 JP 2022543808 A JP2022543808 A JP 2022543808A JP 2022543808 A JP2022543808 A JP 2022543808A JP WO2022038450 A5 JPWO2022038450 A5 JP WO2022038450A5
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Japan
Prior art keywords
precursor
oxidizing gas
metal oxides
stopping
introduction
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JP2022543808A
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English (en)
Japanese (ja)
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JP7777531B2 (ja
JPWO2022038450A1 (https=
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Priority claimed from PCT/IB2021/057239 external-priority patent/WO2022038450A1/ja
Publication of JPWO2022038450A1 publication Critical patent/JPWO2022038450A1/ja
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Priority to JP2025196564A priority Critical patent/JP2026020220A/ja
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JP2022543808A 2020-08-19 2021-08-06 ハフニウムジルコニウム酸化物の製造方法 Active JP7777531B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025196564A JP2026020220A (ja) 2020-08-19 2025-11-17 金属酸化物の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020138520 2020-08-19
JP2020138520 2020-08-19
PCT/IB2021/057239 WO2022038450A1 (ja) 2020-08-19 2021-08-06 金属酸化物の製造方法

Related Child Applications (1)

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JP2025196564A Division JP2026020220A (ja) 2020-08-19 2025-11-17 金属酸化物の製造方法

Publications (3)

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JPWO2022038450A1 JPWO2022038450A1 (https=) 2022-02-24
JPWO2022038450A5 true JPWO2022038450A5 (https=) 2024-07-30
JP7777531B2 JP7777531B2 (ja) 2025-11-28

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ID=80323236

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JP2022543808A Active JP7777531B2 (ja) 2020-08-19 2021-08-06 ハフニウムジルコニウム酸化物の製造方法
JP2025196564A Pending JP2026020220A (ja) 2020-08-19 2025-11-17 金属酸化物の製造方法

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JP2025196564A Pending JP2026020220A (ja) 2020-08-19 2025-11-17 金属酸化物の製造方法

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US (1) US20230326751A1 (https=)
JP (2) JP7777531B2 (https=)
KR (1) KR20230052894A (https=)
CN (1) CN116075923A (https=)
DE (1) DE112021004337T5 (https=)
WO (1) WO2022038450A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
JP3863391B2 (ja) * 2001-06-13 2006-12-27 Ｎｅｃエレクトロニクス株式会社 半導体装置
KR100716652B1 (ko) * 2005-04-30 2007-05-09 주식회사 하이닉스반도체 나노컴포지트 유전막을 갖는 캐패시터 및 그의 제조 방법
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
KR20120064966A (ko) * 2010-12-10 2012-06-20 에스케이하이닉스 주식회사 반도체 장치 제조 방법
WO2013150920A1 (ja) * 2012-04-05 2013-10-10 東京エレクトロン株式会社 半導体デバイスの製造方法及び基板処理システム
US9685560B2 (en) * 2015-03-02 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Transistor, method for manufacturing transistor, semiconductor device, and electronic device
JP6968567B2 (ja) * 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN110383436A (zh) * 2017-03-13 2019-10-25 株式会社半导体能源研究所 复合氧化物及晶体管
US11714438B2 (en) * 2018-01-24 2023-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
TWI809158B (zh) * 2018-07-26 2023-07-21 日商東京威力科創股份有限公司 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法
JP7254462B2 (ja) * 2018-08-09 2023-04-10 株式会社半導体エネルギー研究所 半導体装置の作製方法

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