KR20230052894A - 금속 산화물의 제조 방법 - Google Patents
금속 산화물의 제조 방법 Download PDFInfo
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- KR20230052894A KR20230052894A KR1020237005570A KR20237005570A KR20230052894A KR 20230052894 A KR20230052894 A KR 20230052894A KR 1020237005570 A KR1020237005570 A KR 1020237005570A KR 20237005570 A KR20237005570 A KR 20237005570A KR 20230052894 A KR20230052894 A KR 20230052894A
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- insulator
- oxide
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- film
- oxygen
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
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- Mechanical Engineering (AREA)
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- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2020-138520 | 2020-08-19 | ||
| JP2020138520 | 2020-08-19 | ||
| PCT/IB2021/057239 WO2022038450A1 (ja) | 2020-08-19 | 2021-08-06 | 金属酸化物の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230052894A true KR20230052894A (ko) | 2023-04-20 |
Family
ID=80323236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237005570A Pending KR20230052894A (ko) | 2020-08-19 | 2021-08-06 | 금속 산화물의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230326751A1 (https=) |
| JP (2) | JP7777531B2 (https=) |
| KR (1) | KR20230052894A (https=) |
| CN (1) | CN116075923A (https=) |
| DE (1) | DE112021004337T5 (https=) |
| WO (1) | WO2022038450A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12295163B2 (en) | 2021-12-16 | 2025-05-06 | Asm Ip Holding B.V. | Formation of gate stacks comprising a threshold voltage tuning layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151383A (ja) | 2009-12-25 | 2011-08-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2012257187A (ja) | 2010-08-06 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体集積回路 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6780704B1 (en) * | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
| JP3863391B2 (ja) * | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | 半導体装置 |
| KR100716652B1 (ko) * | 2005-04-30 | 2007-05-09 | 주식회사 하이닉스반도체 | 나노컴포지트 유전막을 갖는 캐패시터 및 그의 제조 방법 |
| KR20120064966A (ko) * | 2010-12-10 | 2012-06-20 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
| WO2013150920A1 (ja) * | 2012-04-05 | 2013-10-10 | 東京エレクトロン株式会社 | 半導体デバイスの製造方法及び基板処理システム |
| US9685560B2 (en) * | 2015-03-02 | 2017-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, method for manufacturing transistor, semiconductor device, and electronic device |
| JP6968567B2 (ja) * | 2016-04-22 | 2021-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN110383436A (zh) * | 2017-03-13 | 2019-10-25 | 株式会社半导体能源研究所 | 复合氧化物及晶体管 |
| US11714438B2 (en) * | 2018-01-24 | 2023-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| TWI809158B (zh) * | 2018-07-26 | 2023-07-21 | 日商東京威力科創股份有限公司 | 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法 |
| JP7254462B2 (ja) * | 2018-08-09 | 2023-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2021
- 2021-08-06 WO PCT/IB2021/057239 patent/WO2022038450A1/ja not_active Ceased
- 2021-08-06 JP JP2022543808A patent/JP7777531B2/ja active Active
- 2021-08-06 US US18/041,251 patent/US20230326751A1/en active Pending
- 2021-08-06 DE DE112021004337.4T patent/DE112021004337T5/de active Pending
- 2021-08-06 KR KR1020237005570A patent/KR20230052894A/ko active Pending
- 2021-08-06 CN CN202180057428.8A patent/CN116075923A/zh active Pending
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2025
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011151383A (ja) | 2009-12-25 | 2011-08-04 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP2012257187A (ja) | 2010-08-06 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体集積回路 |
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| Publication number | Publication date |
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| CN116075923A (zh) | 2023-05-05 |
| WO2022038450A1 (ja) | 2022-02-24 |
| DE112021004337T5 (de) | 2023-05-25 |
| US20230326751A1 (en) | 2023-10-12 |
| JP2026020220A (ja) | 2026-02-06 |
| JP7777531B2 (ja) | 2025-11-28 |
| JPWO2022038450A1 (https=) | 2022-02-24 |
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