KR20230052894A - 금속 산화물의 제조 방법 - Google Patents

금속 산화물의 제조 방법 Download PDF

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KR20230052894A
KR20230052894A KR1020237005570A KR20237005570A KR20230052894A KR 20230052894 A KR20230052894 A KR 20230052894A KR 1020237005570 A KR1020237005570 A KR 1020237005570A KR 20237005570 A KR20237005570 A KR 20237005570A KR 20230052894 A KR20230052894 A KR 20230052894A
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insulator
oxide
conductor
film
oxygen
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슌페이 야마자키
?페이 야마자키
유지 에기
야스히로 진보
유지로 사쿠라다
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20230052894A publication Critical patent/KR20230052894A/ko
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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
KR1020237005570A 2020-08-19 2021-08-06 금속 산화물의 제조 방법 Pending KR20230052894A (ko)

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JPJP-P-2020-138520 2020-08-19
JP2020138520 2020-08-19
PCT/IB2021/057239 WO2022038450A1 (ja) 2020-08-19 2021-08-06 金属酸化物の製造方法

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US (1) US20230326751A1 (https=)
JP (2) JP7777531B2 (https=)
KR (1) KR20230052894A (https=)
CN (1) CN116075923A (https=)
DE (1) DE112021004337T5 (https=)
WO (1) WO2022038450A1 (https=)

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US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路

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US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
JP3863391B2 (ja) * 2001-06-13 2006-12-27 Necエレクトロニクス株式会社 半導体装置
KR100716652B1 (ko) * 2005-04-30 2007-05-09 주식회사 하이닉스반도체 나노컴포지트 유전막을 갖는 캐패시터 및 그의 제조 방법
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