JP7805298B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

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Publication number
JP7805298B2
JP7805298B2 JP2022543813A JP2022543813A JP7805298B2 JP 7805298 B2 JP7805298 B2 JP 7805298B2 JP 2022543813 A JP2022543813 A JP 2022543813A JP 2022543813 A JP2022543813 A JP 2022543813A JP 7805298 B2 JP7805298 B2 JP 7805298B2
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Prior art keywords
insulator
oxide
conductor
oxygen
film
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Japanese (ja)
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JPWO2022038456A5 (https=
JPWO2022038456A1 (https=
Inventor
舜平 山崎
良寛 小松
敏和 大野
悠一 柳澤
慎也 笹川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
JP2022543813A 2020-08-21 2021-08-06 半導体装置の作製方法 Active JP7805298B2 (ja)

Priority Applications (1)

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JP2026003842A JP2026050481A (ja) 2020-08-21 2026-01-13 半導体装置の作製方法

Applications Claiming Priority (5)

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JP2020139814 2020-08-21
JP2020139814 2020-08-21
JP2020195884 2020-11-26
JP2020195884 2020-11-26
PCT/IB2021/057249 WO2022038456A1 (ja) 2020-08-21 2021-08-06 半導体装置の作製方法

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Publications (3)

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