CN115917038A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN115917038A
CN115917038A CN202180051208.4A CN202180051208A CN115917038A CN 115917038 A CN115917038 A CN 115917038A CN 202180051208 A CN202180051208 A CN 202180051208A CN 115917038 A CN115917038 A CN 115917038A
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insulator
oxide
conductor
addition
oxygen
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Chinese (zh)
Inventor
山崎舜平
小松良宽
大野敏和
柳泽悠一
笹川慎也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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CN202180051208.4A 2020-08-21 2021-08-06 半导体装置的制造方法 Pending CN115917038A (zh)

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JP2020-139814 2020-08-21
JP2020139814 2020-08-21
JP2020195884 2020-11-26
JP2020-195884 2020-11-26
PCT/IB2021/057249 WO2022038456A1 (ja) 2020-08-21 2021-08-06 半導体装置の作製方法

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CN115917038A true CN115917038A (zh) 2023-04-04

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JP (2) JP7805298B2 (https=)
KR (1) KR20230053616A (https=)
CN (1) CN115917038A (https=)
WO (1) WO2022038456A1 (https=)

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US12295163B2 (en) 2021-12-16 2025-05-06 Asm Ip Holding B.V. Formation of gate stacks comprising a threshold voltage tuning layer
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