KR20230053616A - 반도체 장치의 제작 방법 - Google Patents

반도체 장치의 제작 방법 Download PDF

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KR20230053616A
KR20230053616A KR1020237006652A KR20237006652A KR20230053616A KR 20230053616 A KR20230053616 A KR 20230053616A KR 1020237006652 A KR1020237006652 A KR 1020237006652A KR 20237006652 A KR20237006652 A KR 20237006652A KR 20230053616 A KR20230053616 A KR 20230053616A
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insulator
oxide
film
conductor
oxygen
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Korean (ko)
Inventor
순페이 야마자키
요시히로 코마츠
토시카즈 오노
유이치 야나기사와
신야 사사가와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20230053616A publication Critical patent/KR20230053616A/ko
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
KR1020237006652A 2020-08-21 2021-08-06 반도체 장치의 제작 방법 Pending KR20230053616A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2020-139814 2020-08-21
JP2020139814 2020-08-21
JP2020195884 2020-11-26
JPJP-P-2020-195884 2020-11-26
PCT/IB2021/057249 WO2022038456A1 (ja) 2020-08-21 2021-08-06 半導体装置の作製方法

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KR20230053616A true KR20230053616A (ko) 2023-04-21

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