JPWO2020210263A5 - - Google Patents

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JPWO2020210263A5
JPWO2020210263A5 JP2021560514A JP2021560514A JPWO2020210263A5 JP WO2020210263 A5 JPWO2020210263 A5 JP WO2020210263A5 JP 2021560514 A JP2021560514 A JP 2021560514A JP 2021560514 A JP2021560514 A JP 2021560514A JP WO2020210263 A5 JPWO2020210263 A5 JP WO2020210263A5
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semiconductor device
metal
layer
polar
conductive oxide
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JP2021560514A
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JP2022523265A (ja
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Priority claimed from PCT/US2020/027111 external-priority patent/WO2020210263A1/en
Publication of JP2022523265A publication Critical patent/JP2022523265A/ja
Publication of JPWO2020210263A5 publication Critical patent/JPWO2020210263A5/ja
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JP2021560514A 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス Pending JP2022523265A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962831044P 2019-04-08 2019-04-08
US62/831,044 2019-04-08
PCT/US2020/027111 WO2020210263A1 (en) 2019-04-08 2020-04-07 Doped polar layers and semiconductor device incorporating same

Publications (2)

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JP2022523265A JP2022523265A (ja) 2022-04-21
JPWO2020210263A5 true JPWO2020210263A5 (de) 2023-04-14

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JP2021560540A Pending JP2022523266A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560519A Pending JP2022527654A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560514A Pending JP2022523265A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560515A Pending JP2022527410A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

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JP2021560540A Pending JP2022523266A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス
JP2021560519A Pending JP2022527654A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

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JP2021560515A Pending JP2022527410A (ja) 2019-04-08 2020-04-07 ドープされた極性層及びそれを組み込んだ半導体デバイス

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US (22) US11164976B2 (de)
JP (4) JP2022523266A (de)
KR (4) KR20210151146A (de)
CN (4) CN113892156A (de)
DE (4) DE112020001926T5 (de)
TW (4) TW202105684A (de)
WO (4) WO2020210257A1 (de)

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