JPWO2018216240A1 - テンプレートの製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000013078 crystal Substances 0.000 claims abstract description 171
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 93
- 239000010980 sapphire Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000002245 particle Substances 0.000 claims description 44
- 230000003746 surface roughness Effects 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 31
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 229910002704 AlGaN Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 73
- 238000000089 atomic force micrograph Methods 0.000 description 48
- 230000001186 cumulative effect Effects 0.000 description 14
- 238000005253 cladding Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000000977 initiatory effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Abstract
Description
最初に、本発明の実施形態に係る窒化物半導体紫外線発光素子の構造の一例について、図面を参照して説明する。図1は、本発明の実施形態に係る窒化物半導体紫外線発光素子の構造の一例を模式的に示した要部断面図である。図2は、図1に示す窒化物半導体紫外線発光素子を図1の上側から見た場合の構造の一例を模式的に示した平面図である。なお、図1では、図示の都合上、基板、AlGaN系半導体層及び電極の厚さ(図中の上下方向の長さ)を模式的に示しているため、必ずしも実際の寸法比とは一致しない。また、以下の説明において、p型及びn型の両方を記載していないAlGaN系半導体はアンドープであるが、アンドープであっても不可避的に混入する程度の微量の不純物は含まれ得る。
次に、上述したテンプレート10について説明する。なお、本発明の実施形態に係るテンプレート10は、サファイア基板11の主面に対して形成されるAlN層12に特徴があり、サファイア基板11は、AlN層12がエピタキシャル成長可能(特にC軸方向に成長可能)なものであれば、任意のものを使用することが可能である。
ここでは、特許文献1、2及び非特許文献1においてAlN層の成長前に形成されるAlN結晶核と、本発明の実施形態においてAlN層を構成する微細なAlN結晶との違いについて説明する。
10 テンプレート
11 サファイア基板
12 AlN層
20 素子構造部
21 n型クラッド層
22 活性層
23 電子ブロック層
24 p型コンタクト層
25 p電極
26 n電極
Claims (15)
- (0001)面または(0001)面に対して所定の角度だけ傾斜した面を主面とするサファイア基板と、
前記サファイア基板の前記主面に直接形成される、当該主面に対してエピタキシャルな結晶方位関係を有するAlN結晶で構成されたAlN層と、を備え、
前記AlN層の前記主面から20nmの厚さにおける前記AlN結晶の平均粒径が100nm以下であることを特徴とするテンプレート。 - 前記AlN層の前記主面から20nmの厚さにおける前記AlN結晶の平均粒径が、75nm以下であることを特徴とする請求項1に記載のテンプレート。
- 前記AlN層の前記主面から20nmの厚さにおける前記AlN結晶の平均粒径が、70nm以下であることを特徴とする請求項1または2に記載のテンプレート。
- 前記AlN層の前記主面から300nmの厚さにおける前記AlN結晶の平均粒径が、300nm以下であることを特徴とする請求項1〜3のいずれか1項に記載のテンプレート。
- 前記サファイア基板の前記主面が、(0001)面に対して0.2°以上傾斜した面であることを特徴とする請求項1〜4のいずれか1項に記載のテンプレート。
- 前記AlN層の前記主面から300nmの厚さにおける前記AlN結晶は、前記サファイア基板の上方に向かって+C軸配向していることを特徴とする請求項1〜5のいずれか1項に記載のテンプレート。
- 請求項1〜6のいずれか1項に記載のテンプレートと、
前記テンプレート上に積層された複数のAlGaN系半導体層を含む素子構造部と、
を備えることを特徴とする窒化物半導体紫外線発光素子。 - (0001)面または(0001)面に対して所定の角度だけ傾斜した面を主面とするサファイア基板の前記主面にAlN結晶を直接エピタキシャル成長させてAlN層を形成する工程を備え、
前記工程において、前記主面から20nmの厚さまでエピタキシャル成長させた前記AlN層の表面における前記AlN結晶の平均粒径が100nm以下になる成長条件で、前記AlN結晶をエピタキシャル成長させることを特徴とするテンプレートの製造方法。 - (0001)面または(0001)面に対して所定の角度だけ傾斜した面を主面とするサファイア基板の前記主面にAlN結晶を直接エピタキシャル成長させてAlN層を形成する工程を備え、
前記工程において、前記主面の90%以上を被覆する前記AlN層を20nmの厚さまでエピタキシャル成長させた時に、前記AlN層の表面における前記AlN結晶の平均粒径が100nm以下になる成長条件で、前記AlN結晶をエピタキシャル成長させることを特徴とするテンプレートの製造方法。 - 前記工程において、前記主面から300nmの厚さまでエピタキシャル成長させた前記AlN層の表面における前記AlN結晶の平均粒径が300nm以下になる成長条件で、前記AlN層をエピタキシャル成長させることを特徴とする請求項8または9に記載のテンプレートの製造方法。
- 前記工程において、前記主面から20nmの厚さまでエピタキシャル成長させた前記AlN層の表面粗さのRMS値が、前記主面から300nmの厚さまでエピタキシャル成長させた前記AlN層の表面粗さのRMS値以下になる成長条件で、前記AlN層をエピタキシャル成長させることを特徴とする請求項8〜10のいずれか1項に記載のテンプレートの製造方法。
- 前記工程において、前記主面から20nmの厚さまでエピタキシャル成長させた前記AlN層の表面粗さのRMS値が5nm以下になる成長条件で、前記AlN層をエピタキシャル成長させることを特徴とする請求項8〜11のいずれか1項に記載のテンプレートの製造方法。
- 前記工程において、前記主面から300nmの厚さまでエピタキシャル成長させた前記AlN層の表面粗さのRMS値が10nm以下になる成長条件で、前記AlN層をエピタキシャル成長させることを特徴とする請求項8〜12のいずれか1項に記載のテンプレートの製造方法。
- 前記工程において、前記主面から300nmの厚さまでエピタキシャル成長させた前記AlN層の表面における前記AlN結晶が+C軸配向する成長条件で、前記AlN層をエピタキシャル成長させることを特徴とする請求項8〜13のいずれか1項に記載のテンプレートの製造方法。
- 前記工程において、前記AlN層の成長温度を1150℃以上1300℃以下にすることを特徴とする請求項8〜14のいずれか1項に記載のテンプレートの製造方法。
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US11152543B2 (en) * | 2017-11-22 | 2021-10-19 | Soko Kagaku Co., Ltd. | Nitride semiconductor light-emitting element |
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JPH11340147A (ja) * | 1998-05-25 | 1999-12-10 | Matsushita Electron Corp | 窒化物半導体ウエハーの製造方法および窒化物半導体素子の製造方法 |
JP4451222B2 (ja) * | 2004-06-08 | 2010-04-14 | 日本碍子株式会社 | エピタキシャル基板、半導体積層構造、およびエピタキシャル基板の製造方法 |
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US11049999B2 (en) | 2021-06-29 |
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JP2018201008A (ja) | 2018-12-20 |
CN109314159A (zh) | 2019-02-05 |
CN109314159B (zh) | 2022-03-22 |
WO2018216240A1 (ja) | 2018-11-29 |
US20200373463A1 (en) | 2020-11-26 |
TW201907584A (zh) | 2019-02-16 |
JP6483913B1 (ja) | 2019-03-13 |
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EP3432369A1 (en) | 2019-01-23 |
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