EP3432369A4 - Template, nitride semiconductor ultra-violet light-emitting element and template production method - Google Patents

Template, nitride semiconductor ultra-violet light-emitting element and template production method Download PDF

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Publication number
EP3432369A4
EP3432369A4 EP17872879.6A EP17872879A EP3432369A4 EP 3432369 A4 EP3432369 A4 EP 3432369A4 EP 17872879 A EP17872879 A EP 17872879A EP 3432369 A4 EP3432369 A4 EP 3432369A4
Authority
EP
European Patent Office
Prior art keywords
template
emitting element
production method
nitride semiconductor
violet light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP17872879.6A
Other languages
German (de)
French (fr)
Other versions
EP3432369A1 (en
Inventor
Akira Hirano
Yosuke Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soko Kagaku Co Ltd
Original Assignee
Soko Kagaku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soko Kagaku Co Ltd filed Critical Soko Kagaku Co Ltd
Publication of EP3432369A1 publication Critical patent/EP3432369A1/en
Publication of EP3432369A4 publication Critical patent/EP3432369A4/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
EP17872879.6A 2017-05-26 2017-09-29 Template, nitride semiconductor ultra-violet light-emitting element and template production method Ceased EP3432369A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017019657 2017-05-26
PCT/JP2017/035559 WO2018216240A1 (en) 2017-05-26 2017-09-29 Template, nitride semiconductor ultra-violet light-emitting element and template production method

Publications (2)

Publication Number Publication Date
EP3432369A1 EP3432369A1 (en) 2019-01-23
EP3432369A4 true EP3432369A4 (en) 2019-08-28

Family

ID=64395529

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17872879.6A Ceased EP3432369A4 (en) 2017-05-26 2017-09-29 Template, nitride semiconductor ultra-violet light-emitting element and template production method

Country Status (8)

Country Link
US (1) US11049999B2 (en)
EP (1) EP3432369A4 (en)
JP (2) JP6483913B1 (en)
KR (1) KR102054094B1 (en)
CN (1) CN109314159B (en)
RU (1) RU2702948C1 (en)
TW (1) TWI703742B (en)
WO (1) WO2018216240A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049999B2 (en) * 2017-05-26 2021-06-29 Soko Kagaku Co., Ltd. Template, nitride semiconductor ultraviolet light-emitting element, and method of manufacturing template
US11152543B2 (en) * 2017-11-22 2021-10-19 Soko Kagaku Co., Ltd. Nitride semiconductor light-emitting element
EP3754732B1 (en) * 2018-02-14 2023-04-12 Soko Kagaku Co., Ltd. Nitride semiconductor ultraviolet light-emitting element
US11552217B2 (en) 2018-11-12 2023-01-10 Epistar Corporation Semiconductor device
JP2020177965A (en) * 2019-04-16 2020-10-29 日機装株式会社 Nitride semiconductor light-emitting element

Citations (2)

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Publication number Priority date Publication date Assignee Title
US20090057646A1 (en) * 2007-08-27 2009-03-05 Riken Optical semiconductor device and method for manufacturing the same
EP2731151A1 (en) * 2011-07-05 2014-05-14 Panasonic Corporation Method of manufacture for nitride semiconductor light emitting element, wafer, and nitride semiconductor light emitting element

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JPH11340147A (en) * 1998-05-25 1999-12-10 Matsushita Electron Corp Manufacture of nitride semiconductor wafer and element
JP4451222B2 (en) * 2004-06-08 2010-04-14 日本碍子株式会社 Epitaxial substrate, semiconductor multilayer structure, and epitaxial substrate manufacturing method
JP4578282B2 (en) * 2005-03-11 2010-11-10 国立大学法人東京農工大学 Method for producing aluminum group III nitride crystal
JP2006287120A (en) * 2005-04-04 2006-10-19 Canon Inc Light emitting element and its manufacturing method
UA97969C2 (en) * 2006-12-28 2012-04-10 Сейнт-Гобейн Серамикс Энд Пластикс, Инк. Sapphire substrate (variants)
TWI350784B (en) * 2006-12-28 2011-10-21 Saint Gobain Ceramics Sapphire substrates and methods of making same
JP5095253B2 (en) * 2007-03-30 2012-12-12 富士通株式会社 Semiconductor epitaxial substrate, compound semiconductor device, and manufacturing method thereof
JP2009283785A (en) * 2008-05-23 2009-12-03 Showa Denko Kk Group iii nitride semiconductor laminate structure and manufacturing method thereof
JP5399021B2 (en) * 2008-08-28 2014-01-29 日本碍子株式会社 Epitaxial substrate for forming high-frequency semiconductor element and method for producing epitaxial substrate for forming high-frequency semiconductor element
JP2010064911A (en) * 2008-09-09 2010-03-25 Tokuyama Corp Structure having projecting part, and method for manufacturing the same
JP2011023677A (en) * 2009-07-21 2011-02-03 Hitachi Cable Ltd Compound semiconductor epitaxial wafer, and method of manufacturing the same
RU2009137422A (en) * 2009-09-30 2011-04-10 Общество с ограниченной ответственностью "УФ Нанодиод" (RU) COMBINED SUPPORT FOR LED
EP2518191B1 (en) 2009-12-25 2024-03-20 Nikkiso Co., Ltd. Template for epitaxial growth and process for producing same
JP2011254068A (en) * 2010-05-07 2011-12-15 Sumitomo Chemical Co Ltd Semiconductor substrate
US8980002B2 (en) * 2011-05-20 2015-03-17 Applied Materials, Inc. Methods for improved growth of group III nitride semiconductor compounds
US8778783B2 (en) * 2011-05-20 2014-07-15 Applied Materials, Inc. Methods for improved growth of group III nitride buffer layers
JP5791399B2 (en) * 2011-07-07 2015-10-07 学校法人立命館 Method for producing AlN layer
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US11049999B2 (en) * 2017-05-26 2021-06-29 Soko Kagaku Co., Ltd. Template, nitride semiconductor ultraviolet light-emitting element, and method of manufacturing template
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US20090057646A1 (en) * 2007-08-27 2009-03-05 Riken Optical semiconductor device and method for manufacturing the same
EP2731151A1 (en) * 2011-07-05 2014-05-14 Panasonic Corporation Method of manufacture for nitride semiconductor light emitting element, wafer, and nitride semiconductor light emitting element

Non-Patent Citations (3)

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Title
KAEDING J F ET AL: "Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes", JOURNAL OF CRYSTAL GR, ELSEVIER, AMSTERDAM, NL, vol. 272, no. 1-4, 10 December 2004 (2004-12-10), pages 257 - 263, XP004658480, ISSN: 0022-0248, DOI: 10.1016/J.JCRYSGRO.2004.08.132 *
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Also Published As

Publication number Publication date
RU2702948C1 (en) 2019-10-14
JPWO2018216240A1 (en) 2019-06-27
US11049999B2 (en) 2021-06-29
TWI703742B (en) 2020-09-01
KR102054094B1 (en) 2019-12-09
JP2018201008A (en) 2018-12-20
CN109314159A (en) 2019-02-05
CN109314159B (en) 2022-03-22
WO2018216240A1 (en) 2018-11-29
US20200373463A1 (en) 2020-11-26
TW201907584A (en) 2019-02-16
JP6483913B1 (en) 2019-03-13
EP3432369A1 (en) 2019-01-23
KR20190087970A (en) 2019-07-25

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