JPWO2016056204A1 - 薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法、及び、表示パネル - Google Patents
薄膜トランジスタ基板、薄膜トランジスタ基板の製造方法、及び、表示パネル Download PDFInfo
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- JPWO2016056204A1 JPWO2016056204A1 JP2016552816A JP2016552816A JPWO2016056204A1 JP WO2016056204 A1 JPWO2016056204 A1 JP WO2016056204A1 JP 2016552816 A JP2016552816 A JP 2016552816A JP 2016552816 A JP2016552816 A JP 2016552816A JP WO2016056204 A1 JPWO2016056204 A1 JP WO2016056204A1
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- oxide semiconductor
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Abstract
Description
以下、実施の形態1に係る薄膜トランジスタ基板100及びその製造方法について、図面を用いて説明する。
まず、本実施の形態に係る薄膜トランジスタ基板100の構成について、図1を用いて説明する。図1は、本実施の形態に係る薄膜トランジスタ基板100の断面図である。
次に、本実施の形態に係る薄膜トランジスタ基板100の製造方法について、図2A及び図2Bを用いて説明する。図2A及び図2Bは、本実施の形態に係る薄膜トランジスタ基板100の製造方法における各工程の断面図である。図2A及び図2Bの左側に高移動度の第1の酸化物半導体層41がチャネルとして用いられる第1の薄膜トランジスタ1(高移動度領域)の各工程における断面図を示し、右側に低移動度の第2の酸化物半導体層42がチャネルとして用いられる第2の薄膜トランジスタ2(低移動度領域)の各工程における断面図を示す。
以上のように、本実施の形態に係る薄膜トランジスタ基板100は、基板10と、基板10上に配置された第1の薄膜トランジスタ1及び第2の薄膜トランジスタ2とを備える。そして、第1の薄膜トランジスタ1は、第1のゲート電極21と、チャネルとして用いられる第1の酸化物半導体層41とを備える。また、第2の薄膜トランジスタ2は、第2のゲート電極22と、チャネルとして用いられる第2の酸化物半導体層42とを備える。ここで、第1の酸化物半導体層41を構成する第1の酸化物半導体材料は、第2の酸化物半導体層42を構成する第2の酸化物半導体材料と移動度が異なる。
次に、実施の形態2に係る薄膜トランジスタ基板100a及びその製造方法について、図面を用いて説明する。
まず、本実施の形態に係る薄膜トランジスタ基板100aの構成について、図7を用いて説明する。図7は、本実施の形態に係る薄膜トランジスタ基板100aの断面図である。
次に、本実施の形態に係る薄膜トランジスタ基板100aの製造方法について、図8A及び図8Bを用いて説明する。図8A及び図8Bは、本実施の形態に係る薄膜トランジスタ基板100aの製造方法における各工程の断面図である。図8A及び図8Bの左側に高移動度の第1の酸化物半導体層41がチャネルとして用いられる第1の薄膜トランジスタ1a(高移動度領域)の各工程における断面図を示し、右側に低移動度の第2の酸化物半導体層42がチャネルとして用いられる第2の薄膜トランジスタ2a(低移動度領域)の各工程における断面図を示す。
以上のように、本実施の形態に係る薄膜トランジスタ基板100aでも、上記実施の形態1に係る薄膜トランジスタ基板100と同様に、チャネルとして用いられる半導体層が、酸化物半導体から構成されるため、当該半導体層の移動度を広い範囲に亘って、精度よく調整することができる。
次に、実施の形態3に係る薄膜トランジスタ基板100b及びその製造方法について、図面を用いて説明する。
まず、本実施の形態に係る薄膜トランジスタ基板100bの構成について、図9を用いて説明する。図9は、本実施の形態に係る薄膜トランジスタ基板100bの断面図である。
次に、本実施の形態に係る薄膜トランジスタ基板100bの製造方法について、図10A、図10B及び図10Cを用いて説明する。図10A、図10B及び図10Cは、本実施の形態に係る薄膜トランジスタ基板100bの製造方法における各工程の断面図である。図10A、図10B及び図10Cの左側に高移動度の第1の酸化物半導体層41がチャネルとして用いられる第1の薄膜トランジスタ1b(高移動度領域)の各工程における断面図を示し、右側に低移動度の第2の酸化物半導体層42がチャネルとして用いられる第2の薄膜トランジスタ2b(低移動度領域)の各工程における断面図を示す。
以上のように、本実施の形態に係る薄膜トランジスタ基板100bでも、上記実施の形態1に係る薄膜トランジスタ基板100と同様に、チャネルとして用いられる半導体層が、酸化物半導体から構成されるため、当該半導体層の移動度を広い範囲に亘って、精度よく調整することができる。
次に、実施の形態4に係る薄膜トランジスタ基板100c及びその製造方法について、図面を用いて説明する。
まず、本実施の形態に係る薄膜トランジスタ基板100cの構成について、図11を用いて説明する。図11は、本実施の形態に係る薄膜トランジスタ基板100cの断面図である。
次に、本実施の形態に係る薄膜トランジスタ基板100bの製造方法について、図12A及び図12Bを用いて説明する。図12A及び図12Bは、本実施の形態に係る薄膜トランジスタ基板100cの製造方法における各工程の断面図である。図12A及び図12Bの左側に高移動度の第1の酸化物半導体層41がチャネルとして用いられる第1の薄膜トランジスタ1c(高移動度領域)の各工程における断面図を示し、右側に低移動度の第2の酸化物半導体層42がチャネルとして用いられる第2の薄膜トランジスタ2c(低移動度領域)の各工程における断面図を示す。
以上のように、本実施の形態に係る薄膜トランジスタ基板100cでも、上記実施の形態1に係る薄膜トランジスタ基板100と同様に、チャネルとして用いられる半導体層が、酸化物半導体から構成されるため、当該半導体層の移動度を広い範囲に亘って、精度よく調整することができる。
次に、実施の形態5に係る表示パネル500について、図13A及び図13Bを用いて説明する。図13Aは、本実施の形態に係る表示パネル500の平面図であり、図13Bは、図13AのY−Y’線における本実施の形態に係る表示パネル500の断面図である。
以上、薄膜トランジスタ及びその製造方法について、実施の形態に基づいて説明したが、本開示は、上記各実施の形態に限定されるものではない。
2、2a、2b、2c 第2の薄膜トランジスタ
10 基板
10a 内部領域
10b 周辺領域
21 第1のゲート電極
21a、60a 導電膜
22 第2のゲート電極
30 ゲート絶縁層
41 第1の酸化物半導体層
41a 第1の酸化物半導体膜
42 第2の酸化物半導体層
42a 第2の酸化物半導体膜
50 チャネル保護層
50a チャネル保護膜
61S 第1のソース電極
61D 第1のドレイン電極
62S 第2のソース電極
62D 第2のドレイン電極
70 保護層
80 絶縁層
100、100a、100b、100c 薄膜トランジスタ基板
200 光
210 酸素プラズマ
310 ゲート駆動回路
320 ソース駆動回路
500 表示パネル
510 表示素子
520 画素
530 有機EL素子
531 陽極
532 有機EL層
533 陰極(透明電極)
540 走査線(ゲート線)
550 映像信号線(ソース線)
571 駆動トランジスタ
572 スイッチングトランジスタ
580 コンデンサ(キャパシタンス)
Claims (12)
- 基板と、
前記基板上に配置された第1の薄膜トランジスタ及び第2の薄膜トランジスタとを備え、
前記第1の薄膜トランジスタは、第1のゲート電極と、チャネルとして用いられる第1の酸化物半導体層とを備え、
前記第2の薄膜トランジスタは、第2のゲート電極と、チャネルとして用いられる第2の酸化物半導体層とを備え、
前記第1の酸化物半導体層を構成する第1の酸化物半導体材料は、前記第2の酸化物半導体層を構成する第2の酸化物半導体材料と移動度が異なる
薄膜トランジスタ基板。 - 前記第1の酸化物半導体層は、前記第1のゲート電極の上方に配置され、
前記第1の薄膜トランジスタは、前記第1の酸化物半導体層上に配置された第3の酸化物半導体層を備え、
前記第3の酸化物半導体層を構成する第3の酸化物半導体材料は、前記第1の酸化物半導体材料より移動度が低い
請求項1に記載の薄膜トランジスタ基板。 - 前記第3の酸化物半導体材料は、前記第2の酸化物半導体材料である
請求項2に記載の薄膜トランジスタ基板。 - 前記第1の薄膜トランジスタは、前記第1の酸化物半導体層の下方に配置された第4の酸化物半導体層を備え、
前記第2の薄膜トランジスタは、前記第2の酸化物半導体層の上方に配置された第5の酸化物半導体層を備え、
前記第1のゲート電極は、前記第1の酸化物半導体層の上方に配置され、
前記第2のゲート電極は、前記第2の酸化物半導体層の下方に配置される
請求項1に記載の薄膜トランジスタ基板。 - 前記第4の酸化物半導体層は、前記第2の酸化物半導体材料から構成され、
前記第5の酸化物半導体層は、前記第1の酸化物半導体材料から構成される
請求項4に記載の薄膜トランジスタ基板。 - 前記第1の酸化物半導体材料と、前記第2の酸化物半導体材料とは、互いに元素構成が異なる
請求項1〜5のいずれか1項に記載の薄膜トランジスタ基板。 - 前記第1の酸化物半導体材料と、前記第2の酸化物半導体材料とは、元素構成が同一であり、かつ、互いに元素比が異なる
請求項1〜5のいずれか1項に記載の薄膜トランジスタ基板。 - 請求項1〜7のいずれか1項に記載の薄膜トランジスタ基板と、
前記薄膜トランジスタ基板上に配置された表示素子と、
前記表示素子内にマトリクス状に配置された複数の画素と、
前記薄膜トランジスタ基板上に配置された、前記表示素子を駆動するための駆動回路とを備える表示パネルであって、
前記第1の酸化物半導体材料は、前記第2の酸化物半導体材料より、移動度が高く、
前記第1の薄膜トランジスタは、前記複数の画素の各画素内に配置され、かつ、発光させる画素を選択的に切り替えるスイッチングトランジスタ、及び、前記駆動回路における駆動トランジスタの少なくとも一方であり、
前記第2の薄膜トランジスタは、前記複数の画素の各画素内に配置され、かつ、前記各画素内の発光素子を駆動する駆動トランジスタである
表示パネル。 - 薄膜トランジスタ基板の製造方法であって、
基板を準備する第1の工程と、
前記基板の上方に、第1のゲート電極及び第2のゲート電極を形成する第2の工程と、
前記基板の上方に、第1の酸化物半導体層及び第2の酸化物半導体層を形成する第3の工程と、
前記第1のゲート電極、及び、前記第1のゲート電極によってチャネルが形成される前記第1の酸化物半導体層を備える第1の薄膜トランジスタを形成する第4の工程と、
前記第2のゲート電極、及び、前記第2のゲート電極によってチャネルが形成される前記第2の酸化物半導体層を備える第2の薄膜トランジスタを形成する第5の工程とを含み、
前記第1の酸化物半導体層を構成する第1の酸化物半導体材料は、前記第2の酸化物半導体層を構成する第2の酸化物半導体材料と移動度が異なる
薄膜トランジスタ基板の製造方法。 - 前記第3の工程は、
前記第2の酸化物半導体材料から構成される第2の酸化物半導体膜を成膜する工程と、
前記第2の酸化物半導体膜の一部の領域を熱処理する工程と、
前記第2の酸化物半導体膜の前記一部の領域をパターニングして前記第1の酸化物半導体層を形成する工程と、
前記第2の酸化物半導体膜の前記一部の領域以外の領域をパターニングして前記第2の酸化物半導体層を形成する工程とを含む
請求項9に記載の薄膜トランジスタ基板の製造方法。 - 前記第3の工程は、
前記第1のゲート電極の上方に前記第1の酸化物半導体材料から構成される第1の酸化物半導体膜を成膜する工程と、
前記第1の酸化物半導体膜をパターニングして前記第1の酸化物半導体層を形成する工程と、
前記第1の酸化物半導体層上、及び、前記第2のゲート電極の上方に、前記第2の酸化物半導体材料から構成される第2の酸化物半導体膜を成膜する工程と、
前記第2の酸化物半導体膜をパターニングして、前記第1の酸化物半導体層上、及び、前記第2のゲート電極の上方に、前記第2の酸化物半導体層を形成する工程とを含み、
前記第2の酸化物半導体材料は、前記第1の酸化物半導体材料より移動度が低い
請求項9に記載の薄膜トランジスタ基板の製造方法。 - 前記第3の工程は、
前記第2の酸化物半導体材料から構成される第2の酸化物半導体膜を成膜する工程と、
前記第2の酸化物半導体膜上に、前記第1の酸化物半導体材料から構成される第1の酸化物半導体膜を成膜する工程と、
前記第1の酸化物半導体膜及び前記第2の酸化物半導体膜をパターニングして、前記第1のゲート電極が形成される位置の下方と前記第2のゲート電極の上方との各々に、前記第1の酸化物半導体層と前記第2の酸化物半導体層とを形成する工程とを含む
請求項9に記載の薄膜トランジスタ基板の製造方法。
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