JPWO2005119755A1 - ダイボンディング用ペレットおよび電子部品 - Google Patents
ダイボンディング用ペレットおよび電子部品 Download PDFInfo
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- JPWO2005119755A1 JPWO2005119755A1 JP2006514079A JP2006514079A JPWO2005119755A1 JP WO2005119755 A1 JPWO2005119755 A1 JP WO2005119755A1 JP 2006514079 A JP2006514079 A JP 2006514079A JP 2006514079 A JP2006514079 A JP 2006514079A JP WO2005119755 A1 JPWO2005119755 A1 JP WO2005119755A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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Abstract
Description
ここで、保護膜の厚みおよび金属組成はxpsにより、0.2nm単位でスパッタリングし、深さ方向の情報を収集し、またボイド率は、X線透過タイプの断面観察装置を用いて50倍で測定した。
Claims (11)
- 電子部品の半導体素子と基板を接合するダイボンディング用はんだペレットにおいて、Sn主成分の鉛フリーはんだ合金の表面に無色透明の厚さ0.5〜20nmで、30〜50原子.%O、5〜15原子%Pおよび残部実質Snからなる保護膜をはんだ付け時の加熱で形成するダイボンディング用はんだペレットのはんだ付け方法。
- 電子部品の半導体素子と基板を接合するダイボンディング用はんだペレットにおいて、Sn主成分の鉛フリーはんだ合金の表面に無色透明の厚さ0.5〜20nmで、30〜50原子.%O、5〜15原子%Pおよび残部実質Snからなる保護膜をはんだ付け加熱時に形成したペレットであって、しかも基板に接合する半導体素子と略同一形状になっていることを特徴とするダイボンディング用はんだペレット。
- 前記ダイボンディング用はんだペレットの厚さは、0.05〜1mmであることを特徴とする請求項2に記載のダイボンディング用はんだペレット。
- 前記Sn主成分の鉛フリーはんだ合金は、Sn系合金、Sn-Cu系合金、Sn-Ag系合金、Sn-Ag-Cu系合金、Sn-Bi系合金、Sn-Pb系合金のいずれかであることを特徴とする請求項2および3に記載のダイボンディング用はんだペレット。
- 電子部品の半導体素子と基板を接合するダイボンディング用はんだペレットにおいて、Sn主成分の鉛フリーはんだ合金の表面に無色透明の厚さ0.5〜20nmで、10〜30原子%In、40〜60原子.%O、5〜15原子%Pおよび残部実質Snからなる保護膜をはんだ付け加熱時に形成したペレットであって、しかも基板に接合する半導体素子と略同一形状になっていることを特徴とするダイボンディング用はんだペレット。
- 前記ダイボンディング用はんだペレットの厚さは、0.05〜1mmであることを特徴とする請求項5に記載のダイボンディング用はんだペレット。
- 前記Sn主成分の鉛フリーはんだ合金は、Sn-In系合金、Sn-Bi-In系合金のいずれかであることを特徴とする請求項5および6に記載のダイボンディング用はんだペレット。
- Cu0.3〜1.0質量%、Ni0.01〜0.1質量%、P0.0001〜0.02質量%、残部実質的にSnからなるはんだ合金をペレット状に成型後、酸素濃度50PPM以下の水素窒素雰囲気中で235℃以上で3分間でピーク温度280℃に加熱して、保護膜を形成することを特徴とする請求項2〜4に記載のダイボンディング用はんだペレットの製造方法。
- Ag3.0〜4.0質量%、Cu0.3〜1.0質量%、Ni0.01〜0.1質量%、P0.0001〜0.02質量%、残部実質的にSnからなるはんだ合金をペレット状に成型後、酸素濃度50PPM以下の水素窒素雰囲気中で235℃以上で3分間でピーク温度280℃に加熱して、保護膜を形成することを特徴とする請求項2〜4に記載のダイボンディング用はんだペレットの製造方法。
- In0.2〜2.0質量%、P0.0001〜0.02質量%、残部実質的にSnからなるはんだ合金をペレット状に成型後、酸素濃度50PPM以下の水素窒素雰囲気中で235℃以上で3分間でピーク温度280℃に加熱して、保護膜を形成することを特徴とする請求項5〜7に記載のダイボンディング用はんだペレットの製造方法。
- 半導体素子と基板がSn主成分の鉛フリーはんだ合金の表面に無色透明の30〜50原子.%O、5〜15原子%Pおよび残部実質Sn、および10〜30原子%In、40〜60原子.%O、5〜15原子%Pおよび残部実質Snからなる保護膜をはんだ付け過熱時に形成する合金でダイボンディング接合されており、しかも該接合面におけるボイド率が10%以下となっていることを特徴とする電子部品。
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Application Number | Priority Date | Filing Date | Title |
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JP2006514079A JP4844393B2 (ja) | 2004-06-01 | 2005-05-26 | ダイボンディング接合方法と電子部品 |
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Application Number | Priority Date | Filing Date | Title |
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JP2004163062 | 2004-06-01 | ||
JP2004163062 | 2004-06-01 | ||
JP2006514079A JP4844393B2 (ja) | 2004-06-01 | 2005-05-26 | ダイボンディング接合方法と電子部品 |
PCT/JP2005/009630 WO2005119755A1 (ja) | 2004-06-01 | 2005-05-26 | はんだ付け方法、ダイボンディング用はんだペレット、ダイボンディングはんだペレットの製造方法および電子部品 |
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JP2011173895A Division JP5403011B2 (ja) | 2004-06-01 | 2011-08-09 | ダイボンディング接合された電子部品 |
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JPWO2005119755A1 true JPWO2005119755A1 (ja) | 2008-04-03 |
JP4844393B2 JP4844393B2 (ja) | 2011-12-28 |
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JP2006514079A Active JP4844393B2 (ja) | 2004-06-01 | 2005-05-26 | ダイボンディング接合方法と電子部品 |
JP2011173895A Active JP5403011B2 (ja) | 2004-06-01 | 2011-08-09 | ダイボンディング接合された電子部品 |
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US (1) | US20080246164A1 (ja) |
EP (1) | EP1783827A4 (ja) |
JP (2) | JP4844393B2 (ja) |
CN (1) | CN1977368B (ja) |
WO (1) | WO2005119755A1 (ja) |
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JP2007110016A (ja) * | 2005-10-17 | 2007-04-26 | Denso Corp | 半導体装置およびその製造方法 |
JP4904953B2 (ja) | 2006-04-06 | 2012-03-28 | 日立電線株式会社 | 配線用導体及びその製造方法並びに端末接続部並びにPbフリーはんだ合金 |
JP5071802B2 (ja) * | 2008-04-08 | 2012-11-14 | 日立金属株式会社 | はんだボール、はんだ層及びはんだバンプ |
CN102132638B (zh) * | 2008-08-21 | 2014-01-29 | 艾格瑞系统有限公司 | 在sn膜中晶须的减少 |
CN102660723B (zh) * | 2012-05-17 | 2014-03-12 | 合肥工业大学 | 一种用于铜线、铜包覆金属复合线材连续热浸镀的稀土改性锡合金及其制备方法 |
US9676047B2 (en) | 2013-03-15 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same |
CN112705878A (zh) | 2014-08-27 | 2021-04-27 | 贺利氏德国有限两合公司 | 焊膏 |
HUE038343T2 (hu) | 2014-08-27 | 2018-10-29 | Heraeus Deutschland Gmbh & Co Kg | Eljárás forrasztott kapcsolat kialakítására |
US10957030B2 (en) | 2018-08-14 | 2021-03-23 | International Business Machines Corporation | Image conduction apparatus for soldering inner void analysis |
Citations (5)
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JPH0449630A (ja) * | 1990-06-19 | 1992-02-19 | Sumitomo Metal Mining Co Ltd | 半導体装置組立て用合金ろう材 |
JPH0592292A (ja) * | 1991-06-27 | 1993-04-16 | Mitsubishi Materials Corp | はんだ付け方法 |
JPH0629331A (ja) * | 1992-07-09 | 1994-02-04 | Nec Corp | ダイボンディング装置 |
JPH1158066A (ja) * | 1997-08-07 | 1999-03-02 | Fuji Electric Co Ltd | はんだ合金 |
JP2001284792A (ja) * | 2000-03-30 | 2001-10-12 | Tanaka Electronics Ind Co Ltd | 半田材料及びそれを用いた半導体装置の製造方法 |
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EP0265077A3 (en) * | 1986-09-25 | 1989-03-08 | Sheldahl, Inc. | An anisotropic adhesive for bonding electrical components |
FI98899C (fi) * | 1994-10-28 | 1997-09-10 | Jorma Kalevi Kivilahti | Menetelmä elektroniikan komponenttien liittämiseksi juottamalla |
JP3414017B2 (ja) * | 1994-12-09 | 2003-06-09 | ソニー株式会社 | 半導体装置 |
JP2001144111A (ja) * | 1999-11-12 | 2001-05-25 | Tanaka Electronics Ind Co Ltd | 半導体装置の製造方法 |
JP2002184240A (ja) * | 2000-12-12 | 2002-06-28 | Totoku Electric Co Ltd | 錫めっき線及び錫合金はんだめっき線 |
TW592872B (en) * | 2001-06-28 | 2004-06-21 | Senju Metal Industry Co | Lead-free solder alloy |
CN1203960C (zh) * | 2003-01-15 | 2005-06-01 | 深圳市亿铖达工业有限公司 | 具有抗氧化能力的无铅焊料 |
CN1239290C (zh) * | 2003-04-11 | 2006-02-01 | 深圳市亿铖达工业有限公司 | 波峰焊用无铅软钎焊料合金 |
-
2005
- 2005-05-26 JP JP2006514079A patent/JP4844393B2/ja active Active
- 2005-05-26 CN CN2005800215356A patent/CN1977368B/zh active Active
- 2005-05-26 EP EP05743795A patent/EP1783827A4/en not_active Withdrawn
- 2005-05-26 WO PCT/JP2005/009630 patent/WO2005119755A1/ja active Application Filing
- 2005-05-26 US US11/628,297 patent/US20080246164A1/en not_active Abandoned
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2011
- 2011-08-09 JP JP2011173895A patent/JP5403011B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0449630A (ja) * | 1990-06-19 | 1992-02-19 | Sumitomo Metal Mining Co Ltd | 半導体装置組立て用合金ろう材 |
JPH0592292A (ja) * | 1991-06-27 | 1993-04-16 | Mitsubishi Materials Corp | はんだ付け方法 |
JPH0629331A (ja) * | 1992-07-09 | 1994-02-04 | Nec Corp | ダイボンディング装置 |
JPH1158066A (ja) * | 1997-08-07 | 1999-03-02 | Fuji Electric Co Ltd | はんだ合金 |
JP2001284792A (ja) * | 2000-03-30 | 2001-10-12 | Tanaka Electronics Ind Co Ltd | 半田材料及びそれを用いた半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1783827A4 (en) | 2009-10-28 |
CN1977368B (zh) | 2010-04-07 |
US20080246164A1 (en) | 2008-10-09 |
CN1977368A (zh) | 2007-06-06 |
JP4844393B2 (ja) | 2011-12-28 |
JP2011249839A (ja) | 2011-12-08 |
EP1783827A1 (en) | 2007-05-09 |
WO2005119755A1 (ja) | 2005-12-15 |
JP5403011B2 (ja) | 2014-01-29 |
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