CN112705878A - 焊膏 - Google Patents

焊膏 Download PDF

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Publication number
CN112705878A
CN112705878A CN202110047707.8A CN202110047707A CN112705878A CN 112705878 A CN112705878 A CN 112705878A CN 202110047707 A CN202110047707 A CN 202110047707A CN 112705878 A CN112705878 A CN 112705878A
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CN
China
Prior art keywords
copper
tin
particles
solder paste
rich
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110047707.8A
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English (en)
Inventor
S.弗里切
J.舒尔策
J.特罗德勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Deutschland GmbH and Co KG
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Heraeus Deutschland GmbH and Co KG
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Filing date
Publication date
Application filed by Heraeus Deutschland GmbH and Co KG filed Critical Heraeus Deutschland GmbH and Co KG
Publication of CN112705878A publication Critical patent/CN112705878A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/362—Selection of compositions of fluxes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/02—Alloys based on copper with tin as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/04—Alloys based on copper with zinc as the next major constituent
    • H—ELECTRICITY
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3485—Applying solder paste, slurry or powder
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  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

焊膏，其含有(i)10‑30重量%的各自具有>0至≤500重量ppm的磷含量并选自铜粒子、富铜的铜/锌合金粒子和富铜的铜/锡合金粒子的至少一种类型的粒子，(ii)60‑80重量%的选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子，和(iii)3‑30重量%的助焊剂或由(i)、(ii)和(iii)构成，其中金属粒子(i)和(ii)的平均粒径≤15微米。

Description

焊膏
本专利申请是申请号为201580044880.5，申请日为2015年8月21日，同题的专利申请的分案申请。
技术领域
本发明涉及用于将电子元件与基底牢固粘接（stoffschlüssig）地接合的方法、用于所述方法的焊膏和可在所述方法中获得的装置（Anordnung）。
背景技术
WO 2011/009597 A1公开了一种用于将电子元件与基底牢固粘接地接合的方法，其中a) 提供具有第一待接合表面的电子元件和具有第二待接合表面的基底，b) 将焊膏施加到待接合表面的至少一个上，c) 布置所述电子元件和所述基底以使电子元件的第一待接合表面和基底的第二待接合表面借助焊膏接触，和d) 焊接来自c)的装置以在所述电子元件和所述基底之间生成牢固粘接的接合。焊膏的施加厚度在此为至少20微米。该方法中所用的焊膏含有(i) 10 - 30重量%（重量%）的铜粒子，(ii) 60 - 80重量%的由选自锡和锡-铜合金的至少一种物质制成的粒子，和(iii) 3 - 30重量%的助焊剂，其中所述铜粒子和所述由选自锡和锡-铜合金的至少一种物质制成的粒子的平均粒径≤ 15微米。
发明内容
申请人已经发现，当使用由各自具有> 0至≤ 500重量ppm的磷含量的由铜和/或由富铜的铜/锡合金和/或铜/锌合金制成的粒子作为焊膏中的铜粒子时，通过从WO 2011/009597 A1中获知的方法可以令人惊讶地获得进一步改进的焊接接头，特别是在例如250至300℃的高温条件下更可靠的焊接接头。
本发明因此涉及用于将电子元件与基底牢固粘接地接合的方法，其中
a) 提供具有第一待接合表面的电子元件和具有第二待接合表面的基底；
b) 将焊膏施加到所述待接合表面的至少一个上；
c) 布置所述电子元件和所述基底以使电子元件的第一待接合表面和基底的第二待接合表面借助焊膏接触；和
d) 焊接来自c)的装置以在所述电子元件和所述基底之间生成牢固粘接的接合；
其中所述焊膏含有(i) 10 - 30重量%的各自具有> 0至≤ 500重量ppm的磷含量并选自铜粒子、富铜的铜/锌合金粒子和富铜的铜/锡合金粒子的至少一种类型的粒子，(ii) 60 - 80重量%的选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子，和(iii) 3 - 30重量%的助焊剂，
其中金属粒子(i)和(ii)的平均粒径≤ 15微米且其中焊膏的施加厚度为至少20微米。
本发明还涉及焊膏，其含有(i) 10 - 30重量%的各自具有> 0至≤ 500重量ppm的磷含量并选自铜粒子、富铜的铜/锌合金粒子和富铜的铜/锡合金粒子的至少一种类型的粒子，(ii) 60 - 80重量%的选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子，和(iii) 3 - 30重量%的助焊剂，其中金属粒子(i)和(ii)的平均粒径≤ 15微米。
根据本发明，电子元件被理解为是指电气和/或电子电路的元件。该电子元件可以例如是芯片，优选裸芯片（无外壳的半导体芯片）、半导体二极管、晶体管、电阻器或电容器。
在本发明的范围内，基底被理解为是指将电子元件与其接合的物体。该基底可以例如是印刷电路板、直接覆铜（DBC或DCB）或引线框。
术语印刷电路板在本文中用作印刷电路卡（Leiterkarte）、电路板或印刷电路的同义词并且描述用于电子元件的载体。印刷电路板由电绝缘材料与粘接到其上的导电接点（印刷导线）构成。例如可以使用纤维增强的塑料作为电绝缘材料。
直接覆铜表示陶瓷板（例如由氧化铝、氮化铝或氧化铍制成），其中一个表面或两个具有最大面积的互相平行表面通过高温下的氧化过程与铜结合。在所选条件下，形成铜和氧的低共熔混合物（Eutektikum），其既与铜又与基底的氧化物结合。
引线框被理解为是指基本仅由芯片载体和连接导线构成的IC（集成电路、微芯片）外壳。术语引线框在本文中用作术语连接框和芯片载体的同义词。芯片载体包含构成其基础构架（Grundgerüst）并由金属例如铜、铜合金、铜和整理剂（Finisher）（例如镍、银或金）的组合、铁-镍合金或其它因瓦合金制成的基底。
该电子元件包含至少一个第一表面，其旨在用于借助经由焊膏生成的接触层将该电子元件与基底表面接合。所述表面也可以是较大表面的一部分。
该基底包含至少一个第二表面，其旨在用于借助经由焊膏生成的接触层将该基底与电子元件的上述表面接合。所述表面也可以是较大表面的一部分。
根据本发明，借助经由焊膏生成的接触层与基底接合的电子元件的表面被称作“第一待接合表面”，且借助经由焊膏生成的接触层与电子元件接合的基底的表面被称作“第二待接合表面”。
通常，至少在电子元件的第一待接合表面上施加金属化层。也通常至少在基底的第二待接合表面上施加金属化层。通常，电子元件和基底都至少在待接合的表面上具有金属化层。因此通常，电子元件在位于基底表面上的金属化层对面的表面上包含金属化层，并且所述金属化层经由接触层互相接合。在本发明的范围内，通常存在的电子元件的金属化层是该电子元件的一部分，且通常存在的基底的金属化层是该基底的一部分。
如果存在金属化层，该金属化层优选占该电子元件的至少一个表面的至少50%，更优选至少70%，再更优选至少90%，特别优选至少95%，例如100%的面积比例。在基底上，该金属化层优选占经由接触层与电子元件接合的表面的至少50%，更优选至少70%，再更优选至少90%，特别优选至少95%，例如100%的面积比例。
该金属化层优选是可焊接层。该金属化层优选含有选自铜、银、金、锡和钯的至少一种元素。该金属化层可以完全由这些元素、这些元素的可焊接化合物或这些元素的混合物或合金构成。
将本发明的焊膏施加到电子元件或基底的待接合表面的至少一个上。
基于其重量计，本发明的焊膏含有(i) 10 - 30重量%，优选12 - 28重量%，更优选15 - 25重量%的各自具有> 0至≤ 500重量ppm，优选> 0至≤ 100重量ppm，更优选> 0至≤50重量ppm，特别是> 0至≤ 10重量ppm的磷含量并选自铜粒子、富铜的铜/锌合金粒子和富铜的铜/锡合金粒子的至少一种类型的粒子，(ii) 60 - 80重量%，优选62 - 78重量%，更优选65 - 75重量%的选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子，和(iii) 3 - 30重量%，优选5 - 20重量%，更优选6- 15重量%的助焊剂，其中金属粒子(i)和(ii)的平均粒径≤ 15微米。
优选地，相对于其重量计，本发明的焊膏由(i) 10 - 30重量%，优选12 - 28重量%，更优选15 - 25重量%的各自具有> 0至≤ 500重量ppm，优选> 0至≤ 100重量ppm，更优选> 0至≤ 50重量ppm，特别是> 0至≤ 10重量ppm的磷含量并选自铜粒子、富铜的铜/锌合金粒子和富铜的铜/锡合金粒子的至少一种类型的粒子，(ii) 60 - 80重量%，优选62 -78重量%，更优选65 - 75重量%的选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子，和(iii) 3 - 30重量%，优选5 - 20重量%，更优选6 - 15重量%的助焊剂构成，其中金属粒子(i)和(ii)的平均粒径≤ 15微米。
该焊膏中所含的铜粒子的铜的纯度优选为至少99.9%（3 N），更优选至少99.99%（4N）。在由富铜的铜/锌合金和/或富铜的铜/锡合金制成的粒子的情况下，该组成为60至99.5重量%的铜和相应地0.5至40重量%的锌和/或锡。在每种情况下，所有粒子的磷含量为> 0至≤ 500重量ppm，优选> 0至≤ 100重量ppm，更优选> 0至≤ 50重量ppm，特别是> 0至≤ 10重量ppm。该粒子优选是通过在惰性气体气氛中雾化制成的粒子，或换言之，通过液态（熔融）铜和/或所述铜合金之一的熔体雾化到惰性气体气氛中制成的粒子。
如已提到，该焊膏还含有选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子。所述锡粒子和/或富锡的金属粒子是所谓的焊料。
如果该焊膏中含有由富锡的锡/铜合金、锡/银合金和/或锡/铜/银合金制成的焊接金属粒子，则其锡含量例如为95 - 99.5重量%，且铜和/或银的含量相应地为0.5 - 5重量%。
金属粒子(i)和(ii)的平均粒径≤ 15微米，优选≤ 13微米，更优选≤ 11微米，再更优选≤ 8微米。该平均粒径优选为2 – 15微米，更优选2 – 13微米，再更优选2 – 11微米，再更优选2 – 8微米。
本文所用的术语“平均粒径”是指可用光学显微镜测得的平均粒度（d50）。可以用与常规数字图像处理系统（CCD数码相机和评估软件）组合的例如在200倍放大率下的光学显微镜，例如用来自Microvision Instruments的测量系统进行这种类型的测量。例如，≤15微米的平均粒径可以是指至少90%的粒子具有≤ 15微米的粒径且少于10%的粒子具有大于15微米的粒径。相应地，2-15微米的平均粒径是指至少90%的粒子具有2-15微米的粒径且少于10%的粒子具有小于2微米或大于15微米的粒径。
根据本发明可能优选的是，少于1%的粒子(i)和(ii)超过特定的粒径。可被少于1%的粒子(i)和(ii)超过的所述粒径优选为15微米，更优选11微米，再更优选8微米。
粒子(i)和(ii)可具有不同几何。但是，粒子(i)和(ii)优选为球形。但是，本领域技术人员显而易见的是，由于生产所致，所用的粒子(i)和(ii)中的次要部分也可以为非球形。但是优选的是，至少90重量%，更优选至少95重量%，再更优选至少99重量%或100重量%的粒子(i)和(ii)以球形存在。还优选的是，该焊膏中少于5重量%，更优选少于1重量%，再更优选少于0.1重量%，例如0重量%的粒子(i)和(ii)以薄片形存在。
该焊膏中所含的助焊剂的一个目的是，在焊接过程中还原（即去氧化）基底和/或电子元件的表面，防止在焊接操作之前和之后重新形成氧化物和减少外来物质的夹杂。此外，通过该助焊剂的添加，应降低液体焊料的表面张力。例如，可以使用松香、基于松香的树脂体系、基于水的树脂体系或基于羧酸（例如羧酸如柠檬酸、己二酸、肉桂酸和二苯乙醇酸（Benzylsäure））、胺（例如叔胺）和溶剂（例如含有水和多元醇如二醇或甘油的极性溶剂）的体系作为助焊剂。
此外，本发明的焊膏中可含有附加成分，例如醇、脂肪酸（例如饱和脂肪酸，如油酸、肉豆蔻酸、棕榈酸、十七烷酸、硬脂酸或二十烷酸）、聚硅氧烷化合物或磷化物化合物。
本发明的焊膏不含铅，因此无铅。根据本发明，无铅被理解为是指该焊膏除由于技术所致而任选存在的铅杂质外不含铅。相应地，无铅被理解为是指基于焊膏重量计小于1，优选小于0.5，更优选小于0.1，再更优选小于0.01重量%，特别是0重量%的铅含量。
根据本发明，电子元件和基底通过焊接而牢固粘接地互相接合。相应地，牢固粘接的接头是其中接合配对物通过原子力或分子力粘结在一起的接头。
它们优选是只能通过破坏该接合件而分开的不可分离接头。
根据本发明，首先形成由基底、电子元件和位于该基底与电子元件之间的本发明的焊膏层构成的装置。相应地，布置该基底和电子元件以使基底的第一待接合表面和电子元件的第二待接合表面经由焊膏互相接触。通常，该焊膏优选与通常存在的基底的金属化层和通常存在的电子元件的金属化层接触。
优选地，为此，首先在基底的待接合表面上，优选在基底的包含金属化层的表面上施加本发明的焊膏层。该施加可以通过根据现有技术已知的方法之一，例如丝网印刷法、模版印刷法、喷射-或分配技术实施。焊膏不需要覆盖基底的整个表面。相反，焊膏也可以仅施加到基底表面的一部分上，例如施加到所选焊接面上。随后，将电子元件以表面，优选以包含金属化层的表面放置在经施加的焊膏上。
焊膏的施加厚度为至少20微米，更优选至少25微米，再更优选至少50微米。根据一个优选实施方案，该施加厚度为20 – 150微米，更优选30 – 120微米，特别优选50 – 100微米。根据本发明，“施加厚度”被理解为是指在临焊接前，在基底和电子元件的待接合表面之间，优选在基底和电子元件的待接合表面的金属化层之间的距离。因此，该施加厚度基本取决于所用焊膏的量。
在随后的焊接操作中，电子元件和基底之间的距离显著降低，根据焊膏的确切组成，可降低大约50%。
最后，焊接由电子元件、基底和位于它们之间的焊膏构成的装置，并形成由电子元件、基底和位于之间的接触层构成的装置。根据一般定义，焊接在此被理解为是指用于牢固粘接地接合材料而不达到该材料的固相线温度的热方法。
为了焊接，将上述装置优选均匀加热直至达到实际的焊接温度。根据一个优选实施方案，该加热以≤ 3℃/秒的速度进行。
优选地，焊接温度超过所用焊料的熔融温度大约10 - 50℃，更优选大约15 - 45℃，再更优选大约25 - 35℃，例如大约30℃。根据另一优选实施方案，焊接温度低于280℃，例如为240 - 260℃。
为了焊接，将该温度保持在超过本发明焊膏中所含的焊料的液相线温度例如至少15秒，优选至少20秒，再更优选至少30秒的时间。
据推测，在将焊接的装置冷却到低于该焊膏中所含的焊料的液相线温度时，源自(i)类型的粒子的铜扩散到在焊接操作时生成的低共熔锡-铜相中。
在焊接操作后，可以有利地对在焊接操作时获得的由电子元件、基底和位于之间的接触层构成的装置进行回火（tempern）。回火被理解为是指在低于焊料的液相线温度对该装置进行热处理。
该热处理优选在高于40℃，例如40 - 217℃，更优选100 - 210℃，再更优选150 -205℃的温度下进行。该热处理优选进行1分钟至24小时，更优选10分钟至10小时，再更优选20分钟至1小时的持续时间。回火持续时间通常与温度相关联，并且用于回火的温度越低，该持续时间越长。
本发明的方法不需要对用于制造由电子元件、基底和位于之间的接触层构成的装置的常规方法做出昂贵的修改。特别地，本发明的方法对用于传统焊接方法的机器也没有特别要求。本发明的方法因此可以例如在常规条件下和通过使用任选已存在的机器进行。
根据一个优选实施方案，本发明的装置借助上述方法可制造或制造。
在本发明的装置中，电子元件与基底之间的距离优选为8 – 50微米，更优选10 –30微米，再更优选12 – 28微米。所述距离被理解为是电子元件和基底的待接合表面之间的距离，其中通常存在的金属化层归属于电子元件和/或基底。所提及的距离因此相当于在焊接后电子元件与基底之间的接触层的厚度。
根据本发明，可以在上述焊接操作时调节焊接条件，特别是焊膏的施加厚度、温度和时间、以及任选的回火条件，特别是温度和时间，以获得上述接触层。通过相应显微磨片的评估，容易地追踪具有所需性质的接触层的形成。
具体实施方式
实施例:
本发明的实施例1:
制造含有69重量%的具有8微米的平均粒径的锡-铜合金（SnCu0.7）粒子、20重量%的具有8微米的平均粒径和5重量ppm的磷含量的铜粒子和11重量%的基于松香的助焊剂体系的焊膏。
将该焊膏经金属模板施加到铜板上。焊膏的施加厚度为75微米。随后，对带有焊膏的铜板表面用机器配备包含由镍/银制成的金属化层的尺寸2 mm x 2 mm的裸芯片。为此，将裸芯片放置在焊膏上以使裸芯片的金属化层经由焊膏与铜板的表面接触。
然后将由铜板、裸芯片和位于之间的焊膏构成的装置引入焊接炉中，以2.5 开尔文/秒的速率加热到260℃的温度，并将所述温度保持30秒以焊接。
本发明的实施例2:
与实施例1中相同操作，唯一的差别在于铜粒子的磷含量为500重量ppm。
对比例3:
与实施例1中相同操作，唯一的差别在于铜粒子的磷含量为1100重量ppm。
对比例4:
与实施例1中相同操作，唯一的差别在于铜粒子的磷含量为3000重量ppm。
参比例5:
与实施例1中相同操作，差别在于该焊膏含有87重量%的具有8微米的平均粒径的锡-铜合金（SnCu0.7）粒子、无铜粒子和13重量%的基于松香的助焊剂体系。
在根据实施例1至5制成的焊接接头和/或焊接的装置的强度的各种试验中发现了，根据本发明的实施例1和2制成的装置的焊接接头表现出明显高于根据对比例3和4或根据参比例5制成的装置的在200℃下的剪切强度。

Claims (9)

1.焊膏，其含有
(i) 10 - 30重量%的各自具有≥ 5至≤ 500重量ppm的磷含量并选自铜粒子、富铜的铜/锌合金粒子和富铜的铜/锡合金粒子的至少一种类型的粒子，
(ii) 60 - 80重量%的选自锡粒子、富锡的锡/铜合金粒子、富锡的锡/银合金粒子和富锡的锡/铜/银合金粒子的至少一种类型的粒子，和
(iii) 3 - 30重量%的助焊剂，
或所述焊膏由(i)、(ii)和(iii)构成，
其中粒子(i)和(ii)的平均粒径≤ 15微米，
其中所述富铜的铜/锌合金或富铜的铜/锡合金的组成为60至99.5重量%的铜和0.5至40重量%的锌或锡，和
其中所述富锡的锡/铜合金、锡/银合金或锡/铜/银合金的组成为95 - 99.5重量%的锡和0.5 - 5重量%的铜、银或铜 + 银，
其中(i)类型的粒子是通过在惰性气体气氛中雾化制成的粒子。
2.根据权利要求1的焊膏，
其中磷含量为≥ 5至≤ 100重量ppm。
3.用于将电子元件与基底牢固粘接地接合的方法，其中
a) 提供具有第一待接合表面的电子元件和具有第二待接合表面的基底；
b) 将根据权利要求1-2任一项的焊膏施加到所述待接合表面的至少一个上；
c) 布置所述电子元件和所述基底以使电子元件的第一待接合表面和基底的第二待接合表面借助焊膏接触；和
d) 焊接来自c)的装置以在所述电子元件和所述基底之间生成牢固粘接的接合；
其中焊膏的施加厚度为至少20微米。
4.根据权利要求3的方法，
其中所述电子元件是芯片、半导体二极管、晶体管、电阻器或电容器。
5.根据权利要求3或4的方法，
其中所述基底是印刷电路板、直接覆铜或引线框。
6.根据权利要求3或4的方法，
其中所述焊膏通过丝网印刷法、模版印刷法、喷射-或分配技术施加。
7.根据权利要求3或4的方法，
其中所述焊接温度为240 - 260℃。
8.根据权利要求3或4的方法，
其中在步骤d)结束后获得的装置在40 - 217℃的温度下回火1分钟至24小时的持续时间。
9.根据权利要求3至8任一项的方法获得的装置。
CN202110047707.8A 2014-08-27 2015-08-21 焊膏 Pending CN112705878A (zh)

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Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
US20210387290A1 (en) * 2018-12-17 2021-12-16 Heraeus Precious Metals North America Conshohocken Llc Process for forming an electric heater
US11581239B2 (en) 2019-01-18 2023-02-14 Indium Corporation Lead-free solder paste as thermal interface material
EP3782764A1 (de) * 2019-08-19 2021-02-24 Heraeus Deutschland GmbH & Co KG Cu-pasten/lotkombination zur erzeugung bleifreier hochtemepraturstabiler lötverbindungen
CN111468861B (zh) * 2020-04-17 2022-02-15 中车青岛四方机车车辆股份有限公司 一种铜磷钎料焊片及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1840282A (zh) * 2005-03-30 2006-10-04 青木科研有限公司 基本上包括锡(Sn)、银(Ag)、铜(Cu)和磷(P)的无Pb焊料合金组合物
CN1943030A (zh) * 2003-09-08 2007-04-04 霍尼韦尔国际公司 用于电互连的掺杂合金、其制造方法及其用途
US20070172381A1 (en) * 2006-01-23 2007-07-26 Deram Brian T Lead-free solder with low copper dissolution
US20120119392A1 (en) * 2009-07-22 2012-05-17 Heraeus Materials Technology Gmbh & Co. Kg Lead-free high temperature compound

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950007085B1 (ko) * 1990-03-19 1995-06-30 아사히가세이고오교 가부시끼가이샤 고온 소성용 페이스트(paste)
DE19747041A1 (de) 1997-10-24 1999-04-29 Degussa Flußmittelfreie Hartlotpaste
TWI238094B (en) 2002-01-10 2005-08-21 Senju Metal Industry Co Soldering method and solder alloy for additional supply
EP1783827A4 (en) 2004-06-01 2009-10-28 Senju Metal Industry Co BRAZING METHOD, BRAZING PASTILLE FOR MATRIX BONDING, METHOD FOR MANUFACTURING BRAZING PASTILLE FOR MATRIX BONDING, AND ELECTRONIC COMPONENT
US20060113683A1 (en) * 2004-09-07 2006-06-01 Nancy Dean Doped alloys for electrical interconnects, methods of production and uses thereof
EP1971699A2 (en) 2006-01-10 2008-09-24 Illinois Tool Works Inc. Lead-free solder with low copper dissolution
US20090057378A1 (en) 2007-08-27 2009-03-05 Chi-Won Hwang In-situ chip attachment using self-organizing solder
WO2013024829A1 (ja) * 2011-08-12 2013-02-21 日立化成工業株式会社 はんだ接着体、はんだ接着体の製造方法、素子、太陽電池、素子の製造方法および太陽電池の製造方法
US20130045131A1 (en) * 2011-08-17 2013-02-21 Honeywell International Inc. Lead-Free Solder Compositions
JP2013119089A (ja) * 2011-12-06 2013-06-17 Fujitsu Ltd 導電性接合材料、並びに電子部品及び電子機器
CN103659053B (zh) 2012-09-13 2016-05-04 苏州铜宝锐新材料有限公司 一种钎焊用铜焊膏及其制备方法与应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1943030A (zh) * 2003-09-08 2007-04-04 霍尼韦尔国际公司 用于电互连的掺杂合金、其制造方法及其用途
CN1840282A (zh) * 2005-03-30 2006-10-04 青木科研有限公司 基本上包括锡(Sn)、银(Ag)、铜(Cu)和磷(P)的无Pb焊料合金组合物
US20070172381A1 (en) * 2006-01-23 2007-07-26 Deram Brian T Lead-free solder with low copper dissolution
US20120119392A1 (en) * 2009-07-22 2012-05-17 Heraeus Materials Technology Gmbh & Co. Kg Lead-free high temperature compound

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
吴念祖等: "《锡焊技术与可靠性》", 30 September 1989, 人民邮电出版社 *

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