CN1943030A - 用于电互连的掺杂合金、其制造方法及其用途 - Google Patents
用于电互连的掺杂合金、其制造方法及其用途 Download PDFInfo
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Abstract
在此公开的焊料材料和掺杂剂包括至少一种焊料材料、至少一种磷基掺杂剂和至少一种铜基掺杂剂。形成掺杂焊料材料的方法包括:a)提供至少一种焊料材料;b)提供至少一种磷基掺杂剂;c)提供至少一种铜基掺杂剂,以及d)使该至少一种焊料材料、该至少一种磷基掺杂剂和该至少一种铜基掺杂剂混合,从而形成掺杂焊料材料。在此还公开了层状材料,其包括:a)表面或基底;b)电互连;c)如在此所述的、含有至少一种磷基掺杂剂和至少一种铜基掺杂剂的焊料材料,以及d)半导体芯片或封装。还设想了电子和半导体元件,其包括在此公开的焊料材料和/或层状材料。
Description
本申请是基于美国临时申请系列No.:60/501,384的实用申请,该临时申请为共同拥有,且在此以引用的方式将其全文包括在内。
发明领域
本发明领域为电子元件、半导体元件以及其它相关层状材料应用中的热互连系统、热界面系统和界面材料。
发明背景
电子元件用在数量日益增加的用电设备和商业电子产品中。这些用电设备和商业产品的一些实例为电视、个人电脑、互联网服务器、蜂窝式电话、传呼机、掌上管理器、手提收音机、汽车用立体声收音机或者遥控装置。随着这些用电设备和商业电子设备增加的需要,需要那些相同的产品变得更小、更多功能以及更便携以用于用电设备和商业。
作为在这些产品中尺寸降低的结果,包括该产品的元件也必须变得更小。那些需要减少尺寸或者缩小比例的元件的一些实例为印刷电路、接线板、电阻器、线路、键盘、触摸垫以及芯片封装。
因此,拆开并研究该元件,从而确定是否有更好的、允许其缩小比例的构造和媒介材料、手段和方法,从而满足更小的电子元件的需要。确定是否有更好的构造材料、手段和方法的部分步骤是研究制造设备以及构造和安装该元件的方法是如何操作的。
对于那些需要电互连的元件而言,可使用圆球状(sphere)、球状(ball)、粉末、预制件或一些其它的基于焊料的元件,该元件可在两个元件之间提供电互连。在为BGA球的情况下,该球在封装和印刷电路板之间形成电互连,和/或在半导体芯片和封装或板之间形成电互连。将该球接触该板、封装或芯片的地方称之为接合焊盘。焊料回流期间,该接合焊盘金属同该球的相互作用可确定连接的质量,很小的相互作用或反应将导致容易在接合焊盘处的故障连接。该接合焊盘金属太多的反应或相互作用可通过过多地形成易碎金属间化合物或不期望的产品而导致相同的问题,该不期望的产品起源于金属间化合物的形成。
有几种途径纠正和/或减少在此提出的焊料问题。例如,日本专利JP07195189A在BGA球中同时使用铋、铜和锑作为掺杂剂,从而增强连接完整性。可添加或可不添加磷;本专利中的结果表明磷的添加进行地很差。同其它成分相比,以高重量百分比添加磷。铜的水平在100ppm-1000ppm的范围内。
在C.E.Ho,等的“Effect of Cu Concentration on the reactionsbetween Sn-Ag-Cu Solders and Ni”Journal of ElectronicMaterials,Vol.31 No 6,p584,2002和C.R.Kao和C.E Ho的中国专利公开149096I(2001年3月23),研究了在ENIG接合焊盘上,铜的添加对提高Sn-Pb低共熔体性能的影响。未研究含有低于2000ppm铜的组合物。
Joen等“Studies of Electroless Nickel Under Bump Metallurgy-Solder Interfacial Reactions and Their Effects on Flip Chip JointReliability”,Journal of Electronic Materials,p520-528,Vol31,No5,2002和Jeon等“Comparison of Interfacial Reactions and Reliabilities ofSn3.5Ag and Sn4.0Ag0.5Cu and Sn0.7Cu Solder Bumps on ElectrolessNi-PUBMs”Proceeding of Electronic Components and TechnologyConference,IEEE,p1203,2003讨论了与无电镀镍接合焊盘相比,在纯镍接合焊盘上金属间化合物的生长更快。这两篇文章都研究和讨论了浓度为0.5%(5000ppm)或更高的铜的优点。
Zhang等“Effects of Substrate Metallization on Solder/UnderBumpMetallization Interfacial Reactions in Flip-Chip Packages duringMultiple Reflow Cycles”,Journal of Electronic Materials,Vol 32 No3,p123-130,2003表明磷不会对减缓金属间化合物消耗产生影响(其同Jeon的文章相反)。Shing Yeh,“Copper Doped Eutectic Tin-Lead Bumpfor Power Flip Chip Applications”,Proceeding of ElectronicComponents and Technology Conference,IEEE,p338,2003记载1%的铜的添加降低了镍层的消耗。
Niedrich专利和申请(EP0400363 A1 EP0400363 B1和US5011658)表明在Sn-Pb-In焊料中将铜用作掺杂剂,从而最小化铜接合焊盘或连接件的消耗(即未使用镍阻挡层)。发现该焊料中的铜降低了铜连接件的溶解。Niedrich使用铜通过形成铜金属间化合物或(Cu、Ni)Sn金属间化合物来抑制镍阻挡层的相互作用。该Niedrich专利在铜的使用方面同US2671844很相似,其以大于0.5wt%的量将铜添加到焊料中,从而在精细焊接操作期间,最小化铜烙铁头的溶解。
Ozaki的美国出版专利4,938,924中记载添加2000-4000ppm的铜提高了Sn-36Pb-2Ag合金的润湿性和长期连接安全性。日本专利JP60166191A“Solder Alloy Having Excellent Resistance to FatigueCharacteristic”公开了添加300-5000ppm铜的SnBiPb合金,从而提高其抗疲劳性。
美国出版专利6,307,160教导使用至少2%的铟,以提高低共熔Sn-Pb合金在无电镀镍/浸金(ENIG)接合焊盘上的结合强度。
美国出版专利4,695,428“Solder Composition”公开了用于管道工程连接的无Pb焊料组合物。使用的铜浓度超过1000ppm,还添加其它几种元素作为合金添加剂,从而提高该焊料的液相线、固相线、流动性能以及表面抛光。
美国出版专利2303193A教导将0.1-1.5%的Cu(1000-15,000ppmCu)添加到Cd和Sb中,从而提高该焊料的抗蠕变性。该参考文献具体说明“低于所标明量的铜实质上不足以将使用期限提高得超过普通的铅-锡合金”。
因此,持续需要:a)研究对大多数焊料性能没有有害影响、但减缓镍阻挡层的消耗、从而减缓富磷层的生长的焊料材料和焊料掺杂剂,从而在回流和回流后(post reflow)热老化期间维持连接完整性;b)设计和制造满足用电设备规格的电互连,同时最小化制造成本和最大化包括该电互连的产品质量;以及c)研究制造电互连和包括该互连的元件的安全方法。
发明内容
在此公开的焊料材料和掺杂剂包括至少一种焊料材料、至少一种磷基掺杂剂和至少一种铜基掺杂剂。形成掺杂焊料材料的方法包括:a)提供至少一种焊料材料;b)提供至少一种磷基掺杂剂;c)提供至少一种铜基掺杂剂,以及d)将该至少一种焊料材料、该至少一种磷基掺杂剂以及该至少一种铜基掺杂剂混合,从而形成掺杂焊料材料。
还在此公开层状材料,其包括:a)表面或基底;b)电互连;c)如那些在此公开的、包括至少一种磷基掺杂剂和至少一种铜基掺杂剂的焊料材料,以及d)半导体芯片或封装。还设想了电子和半导体元件,其包括在此公开的焊料材料和/或层状材料。
发明详述
与前述参考文献不同,已经研究并在此公开了掺杂焊料材料和焊料掺杂剂,其对大多数焊料性能没有有害影响,但仍减缓镍阻挡层的消耗以及因此减缓富磷层的生长,从而在回流和回流后热老化期间维持连接完整性。这种焊料掺杂剂既满足a)设计和制造满足用电设备规格的电互连,同时最小化制造成本和最大化包括该电互连的产品质量;又b)研究制造电互连和包括该互连的元件的安全方法。
在基底、封装或板上的金属化通常为铜,电互连如BGA球通常连接到该基底、封装或板。铜同大多数焊料(锡)的主要成分快速反应,从而形成Cu-Sn金属间化合物,该化合物快速生长,并自界面剥落或破裂。该破裂降低了该焊料连接的强度和完整性。
为了降低接合焊盘的消耗,可使用阻止Sn和Cu直接接触的阻挡层。通常将这些额外的层称之为接合焊盘金属或凸决下金属(UBM)。用于BGA球的接合焊盘金属通常涉及镀镍的使用,从而提供用于铜的阻挡层和黄金薄涂层,以维持可焊接性。尽管镍会同Sn相互作用从而形成金属间化合物,该金属间化合物生长速度比Cu-Sn金属间化合物的生长速度慢得多。历史上,曾使用电解镍电镀。这种类型电镀中的镍沉积物相当纯,几乎没有不期望的元素如磷的共沉积物。
为了降低制造成本,实施一种新式类型的电镀——无电镀镍(EN),之后进行浸金(IG)。该无电镀镍沉积浴通常涉及次磷酸盐(H2PO2-)溶液的使用,其导致EN涂层中的磷共沉积物达到7-15原子%的水平。在该IG电镀期间,在回流或随后的热漂移中,该添加磷可导致问题。在IG电镀期间,较低磷含量涂层的抗腐蚀性很差,需要使用者致力于更高磷的沉积物。
焊料回流期间,该薄IG涂层几乎立即溶解。然后该焊料中的锡同EN涂层中的镍反应,从而形成Ni-Sn金属间化合物。该金属间化合物的形成不涉及磷,只要该金属间化合物在高温生长,就可在金属间界面排斥越来越多的磷。这种磷可积聚在薄的富磷Ni-P层,其使焊料连接减弱,或者作为晶体Ni-P,其也减弱焊料连接。通过这种富磷层出现焊料连接故障。在工业中,已知这种类型的故障为“黑垫”故障,因为由于该故障而暴露的富磷层可具有微黑的表面。由于即使在固态,该金属间化合物也可快速生长,所以当该连接暴露于高温时,这些故障可在热老化连接中发生,其在焊料回流后似乎立即好起来。
在此设想的焊料材料和掺杂剂包括至少一种焊料材料、至少一种磷基掺杂剂以及至少一种铜基掺杂剂。形成在此公开的掺杂焊料材料的方法包括:a)提供至少一种焊料材料;b)提供至少一种磷基掺杂剂;c)提供至少一种铜基掺杂剂,以及d)将该至少一种焊料材料、该至少一种磷基掺杂剂以及该至少一种铜基掺杂剂混合,从而形成掺杂焊料材料。在设想的实施方案中,添加到该焊料合金或材料中的铜和磷掺杂剂降低了镀有无电镀镍(EN)的阻挡层的消耗。将该掺杂剂添加到焊料合金中,通过如在共同拥有的美国出版专利No.6579479中公开的工艺可将该合金用来制造粉末、糊、锭、丝、预制件或BGA球,在此以引用的方式将其全文包括在内。
在此还公开了层状材料,其包括:a)表面或基底;b)电互连;c)如那些在此公开的、包括磷基掺杂剂和铜基掺杂剂的焊料材料,以及d)半导体芯片或封装。设想的表面可包括印刷电路板或适宜的电子元件。还设想了电子和半导体元件,该电子和半导体元件包括在此公开的焊料材料和/或层状材料。
在此公开的设想实施方案与所引用的参考文献不同,因为所制备的合金添加剂的浓度和作为添加剂添加到焊料的磷的使用不同,且十分显著。在多篇论文如前面引用的Jeon论文中表明焊料中高水平的铜可降低金属间化合物层的消耗。在此使用的水平降低2.5->10指数。Ho的著作表明对于低于0.2%(2000ppm)的铜成分而言,在镍/焊料界面形成不同的金属间化合物。没有任何地方记载了本文所述水平的铜和磷的组合。对于每一种元素而言,用于降低镍消耗的机制是不同的。
而且,前述Niedrich专利通过形成铜金属间化合物或(Cu,Ni)Sn金属间化合物,使用铜来抑制镍阻挡层的相互作用。在铜的使用方面,该Niedrich专利同US2671844很相似,其以超过0.5wt%的量将铜添加到焊料中,从而在精细焊接操作期间,最小化铜烙铁头的溶解。这些铜的添加均需要显著高于在此设想的量。Qzaki专利同样如此,其中,铜的添加显著高于在此设想的量。
该焊料材料可包括任意适宜的焊料材料、合金或金属,如铟、铅、银、铜、铝、锡、铋、镓及其合金、涂银铜、涂银铝或其组合。优选的焊料材料可包括铅-锡合金,其包括铅(37%)-锡(63%)低共熔合金、铟锡(InSn)化合物及合金、铟银(InAg)化合物及合金、铟基化合物、锡银铜化合物(其已经包括铜)及合金(SnAgCu)、锡铋化合物及合金(SnBi)、铝基化合物及合金,以及其组合。如在此使用,术语“金属”是指那些在元素周期表中d区和f区的元素,以及那些具有类金属性质的元素如硅和锗。如在此使用,术语“d区”是指那些在该元素原子核周围具有填充3d、4d、5d和6d轨道电子的元素。如在此使用,术语“f区”是指那些在该元素原子核周围具有填充4f和5f轨道电子的元素,其包括镧系元素和锕系元素。优选的金属包括如铟、铅、银、铜、铝、锡、铋、镓及其合金、涂银铜及涂银铝。术语“金属”还包括合金、金属/金属复合物、金属陶瓷复合物、金属聚合物复合物以及其它金属复合物。如在此使用,术语“化合物”是指具有恒定组成的物质,可通过化学工艺将其裂解为元素。
设想的掺杂剂包括至少一种磷基化合物/掺杂剂以及至少一种铜基化合物/掺杂剂。在此设想的掺杂剂水平对于磷而言低于约100ppm,对于铜而言低于约800ppm。在一些实施方案中,将该掺杂剂的水平设想为对于磷而言,约为10-100ppm,对于铜而言,约为25-800ppm。在一些实施方案中,将该掺杂剂的水平设想为对于磷而言,约为10-70ppm,对于铜而言,约为25-500ppm。在其它实施方案中,将该掺杂剂的水平设想为对于磷而言,约为20-60ppm,对于铜而言,约为40-600ppm。在另一些实施方案中,将该掺杂剂的水平设想为对于磷而言,约为30-60ppm,对于铜而言,约为300-500ppm。
在铸模期间,可将该掺杂剂材料直接添加到焊料主要成分中。当使用少量的掺杂剂时,可期望制备主合金以及用无掺杂焊料将其稀释,从而更好地控制掺杂剂浓度。
可通过任意适宜的方法提供该至少一种焊料材料、该至少一种磷基化合物/掺杂剂,和/或该至少一种铜基化合物/掺杂剂,其包括a)从供应商购买该至少一种焊料材料、该至少一种磷基化合物/掺杂剂,和/或该至少一种铜基化合物/掺杂剂;b)使用由其它供货源提供的化学试剂由供应商本厂生产该至少一种焊料材料、该至少一种磷基化合物/掺杂剂,和/或该至少一种铜基化合物/掺杂剂中的至少一些;和/或c)使用也由本厂或本地生产或提供的化学试剂由供应商本厂生产该至少一种焊料材料、该至少一种磷基化合物/掺杂剂和/或该至少一种铜基化合物/掺杂剂。
还可将在此公开的焊料材料、球以及其它相关的材料用来生产焊糊、聚合物焊料以及其它基于焊料的配方及材料,该材料如在下面Honeywell International Inc.的出版专利和未决专利申请中发现的,该专利是共同拥有的,且在此将其全文包括在内:US专利申请系列No.09/851103,60/357754,60/372525,60/396294和09/543628;以及PCT未决申请系列No.PCT/US02/14613以及所有相关的继续、分案、部分继续以及外国申请。还可将在此公开的焊料材料、涂层组合物以及其它相关的材料用作元件,或者构造基于电子的产品、电子元件和半导体元件。在设想的实施方案中,可将在此公开的合金用于生产BGA球,可将之用在含有BGA球的电路组合如凸形或球形芯片、封装或基底中,可将之用作阳极、丝或糊或者还可将之以浴的形式使用。
在设想的实施方案中,将该球附着到该封装/基底或芯片上,并以与无掺杂球相似的方式回流。对于EN涂层而言,该掺杂剂减缓了消耗速度,并导致完整性更高(更高强度)的连接。
在准备将之用在工业上或被其它用电设备使用的意义上,可对电基产品进行“精加工”。精加工的用电设备产品的实例为电视、计算机、蜂窝式电话、传呼机、掌上管理器、手提收音机、汽车用立体声收音机以及遥控装置。还设想“中间”产品如可能用在精加工产品中的电路板、芯片封装和键盘。
在从概念模型到最终的成品(scale-up)/实物模型的任何研究阶段,电子产品还可包括原型元件。原型可或可不包括所有在精加工产品中预计的实际元件,原型可具有一些由复合材料构造的元件,从而在开始测试时,使其对其它元件的起始影响无效。
如在此使用,术语“电子元件”是指任何可用在电路,从而获得一些期望的电子行为的装置或部件。可按许多方式将在此设想的电子元件分类,包括分成有源元件和无源元件。有源元件为具有动态功能如增益、振动或信号控制的电子元件,其通常需要电源,以用于其操作。实例为双极晶体管、场效应晶体管以及集成电路。无源元件为在操作中为静态即通常不能增益或振动,且一般不需要电源以用于其特征操作的电子元件。实例为常规的电阻器、电容器、电感器、二极管、整流器以及保险丝。
还可将在此设想的电子元件分为导体、半导体或绝缘体。在此,导体为允许电荷载体(如电子)如在电流中一样易在原子之间移动的元件。导体元件的实例为包括金属的电路轨迹和通路。绝缘体为其中功能实质上与材料极度抵抗电流传导的能力相关的元件,如用来电隔离其它元件的材料,而半导体为具有这样功能的元件,该功能实质上与材料以在导体和绝缘体之间的自然电阻率来传导电流的能力相关。半导体元件的实例为晶体管、二极管、一些激光器、整流器、可控硅整流器以及光敏元件。
还可将在此设想的电子元件分为电源或用电设备。通常将电源元件用来给其它元件提供电力,其包括电池、电容器、线圈以及燃料电池。如在此使用,术语“电池”是指通过化学反应生产可用数量电能的装置。类似地,可充电或二次电池为通过化学反应储存可用数量电能的装置。电能消耗元件包括电阻器、晶体管、IC、传感器等等。
此外,还可将在此设想的电子元件分为分散的或集成的。分散元件为集中在电路中的一个地方提供一种特殊电性能的装置。实例为电阻器、电容器、二极管以及晶体管。集成元件为可在电路中的一个地方提供多种电性能的元件的组合。实例为IC,即集成电路,其中组合多个元件和连接轨道,从而执行多种或复杂的功能如逻辑。
实施例
在此说明四种代表性实施例,其包括掺杂有下面量的铜和磷掺杂剂的Sn37Pb:
实施例#1:40ppm+/-10ppm铜和磷
实施例#2:500ppm+/-10ppm铜和30ppm+/-10ppm磷
实施例#3:200ppm+/-10ppm铜和30ppm+/-10ppm磷
实施例#4:200ppm+/-30ppm铜和15ppm+/-5ppm磷
实施例#5:未掺杂Sn-37Pb合金(控制)
实施例编号 | 自ENIG接合焊盘吸收到Shear Ball的总能量 | Ball Shear故障模式 | 对铜的润湿性 | 熔点(+/-1℃) |
1 | 55.5 | 易延展/易碎 | 良好 | 186.3 |
2 | 60.7 | 易延展 | 很好 | 184.9 |
3 | 63.9 | 大部分易延展 | 良好 | 185.5 |
4 | 51.3 | 易碎/部分易延展 | 良好 | 185.8 |
5 | 41.8 | 易碎 | 良好 | 187.0 |
该数据表明没有一种合金掺杂剂会导致熔点自未掺杂材料(实施例#5)大幅下降。对所有合金而言,对裸露铜的润湿性良好。焊接到ENIG接合焊盘金属的剪切球(shear ball)所需要的总能量对于掺杂球而言更高,随着掺杂剂水平的提高,故障模式从未掺杂材料的易碎故障改变为更期望的易延展故障模式。
因此,已经公开了用作电互连的、掺杂焊料材料和焊料掺杂剂的具体实施方案和应用。但是,对本领域技术人员而言,除了已经公开的内容,显然不违背文中创造性概念而进行多种修改是可能的。此外,在解释说明书的过程中,应与上下文一致,以可能的、最宽的方式解释所有术语。特别地,关于元素、元件或步骤,应以非唯一的方式解释术语“包括”和“含有”,这表明所引用的元素、元件或步骤可同其它未明显引用的元素、元件或步骤共同存在、使用或组合。
Claims (31)
1.一种掺杂焊料材料,其包括:
至少一种焊料材料;
至少一种磷基掺杂剂;以及
至少一种铜基掺杂剂。
2.权利要求1的掺杂焊料材料,其中该至少一种焊料材料包括铟、铅、银、铜、铝、锡、铋、镓及其合金、涂银铜、涂银铝或其组合。
3.权利要求2的掺杂焊料材料,其中该至少一种焊料材料包括铅-锡合金、铟锡(InSn)化合物及合金、铟银(InAg)化合物及合金、铟基化合物、锡银铜化合物及合金(SnAgCu)、锡铋化合物及合金(SnBi)、铝基化合物及合金,以及其组合。
4.权利要求3的掺杂焊料材料,其中该铅-锡合金包括铅(37%)-锡(63%)低共熔合金。
5.权利要求1的掺杂焊料材料,其中该至少一种磷基掺杂剂以低于约100ppm磷的量存在。
6.权利要求5的掺杂焊料材料,其中该至少一种磷基掺杂剂以低于约70ppm磷的量存在。
7.权利要求6的掺杂焊料材料,其中该至少一种磷基掺杂剂以低于约60ppm磷的量存在。
8.权利要求1的掺杂焊料材料,其中该至少一种铜基掺杂剂以低于约800ppm铜的量存在。
9.权利要求8的掺杂焊料材料,其中该至少一种铜基掺杂剂以低于约600ppm铜的量存在。
10.权利要求9的掺杂焊料材料,其中该至少一种铜基掺杂剂以低于约500ppm铜的量存在。
11.权利要求1的掺杂焊料材料,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约10-100ppm磷和约25-800ppm铜的量存在。
12.权利要求1的掺杂焊料材料,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约10-70ppm磷和约25-500ppm铜的量存在。
13.权利要求1的掺杂焊料材料,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约20-60ppm磷和约40-600ppm铜的量存在。
14.权利要求1的掺杂焊料材料,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约30-60ppm磷和约300-500ppm铜的量存在。
15.一种形成掺杂焊料材料的方法,包括:
提供至少一种焊料材料;
提供至少一种磷基掺杂剂;
提供至少一种铜基掺杂剂,以及
将该至少一种焊料材料、该至少一种磷基掺杂剂以及该至少一种铜基掺杂剂混合,从而形成掺杂焊料材料。
16.权利要求15的方法,其中该至少一种焊料材料包括铟、铅、银、铜、铝、锡、铋、镓及其合金、涂银铜、涂银铝或其组合。
17.权利要求16的方法,其中该至少一种焊料材料包括铅-锡合金、铟锡(InSn)化合物及合金、铟银(InAg)化合物及合金、铟基化合物、锡银铜化合物及合金(SnAgCu)、锡铋化合物及合金(SnBi)、铝基化合物及合金,以及其组合。
18.权利要求17的方法,其中该铅-锡合金包括铅(37%)-锡(63%)低共熔合金。
19.权利要求15的方法,其中该至少一种磷基掺杂剂以低于约100ppm磷的量存在。
20.权利要求19的方法,其中该至少一种磷基掺杂剂以低于约70ppm磷的量存在。
21.权利要求20的方法,其中该至少一种磷基掺杂剂以低于约60ppm磷的量存在。
22.权利要求15的方法,其中该至少一种铜基掺杂剂以低于约800ppm铜的量存在。
23.权利要求22的方法,其中该至少一种铜基掺杂剂以低于约600ppm铜的量存在。
24.权利要求23的方法,其中该至少一种铜基掺杂剂以低于约500ppm铜的量存在。
25.权利要求15的方法,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约10-100ppm磷和约25-800ppm铜的量存在。
26.权利要求15的方法,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约10-70ppm磷和约25-500ppm铜的量存在。
27.权利要求15的方法,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约20-60ppm磷和约40-600ppm铜的量存在。
28.权利要求15的方法,其中该至少一种磷基掺杂剂和该至少一种铜基掺杂剂以约30-60ppm磷和约300-500ppm铜的量存在。
29.一种层状材料,其包括:
表面或基底;
电互连;
一种含有至少一种磷基掺杂剂和至少一种铜基掺杂剂的焊料材料;以及
半导体芯片或封装。
30.一种含有权利要求1的掺杂焊料材料的电子元件。
31.一种含有权利要求1的掺杂焊料材料的半导体元件。
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US50138403P | 2003-09-08 | 2003-09-08 | |
US60/501,384 | 2003-09-08 |
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EP (1) | EP1665337A4 (zh) |
JP (1) | JP2007533457A (zh) |
KR (1) | KR20070027485A (zh) |
CN (1) | CN1943030A (zh) |
DE (1) | DE04783167T1 (zh) |
TW (1) | TWI272152B (zh) |
WO (1) | WO2005027198A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104169041A (zh) * | 2011-08-17 | 2014-11-26 | 霍尼韦尔国际公司 | 无铅焊料组合物 |
CN106573344A (zh) * | 2014-08-27 | 2017-04-19 | 贺利氏德国有限两合公司 | 焊膏 |
CN106660176A (zh) * | 2014-08-27 | 2017-05-10 | 贺利氏德国有限两合公司 | 用于制造焊接接头的方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10319888A1 (de) | 2003-04-25 | 2004-11-25 | Siemens Ag | Lotmaterial auf SnAgCu-Basis |
JP4993916B2 (ja) * | 2006-01-31 | 2012-08-08 | 昭和シェル石油株式会社 | Inハンダ被覆銅箔リボン導線及びその接続方法 |
US10421161B2 (en) | 2016-05-06 | 2019-09-24 | Honeywell International Inc. | High quality, void and inclusion free alloy wire |
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US4853345A (en) * | 1988-08-22 | 1989-08-01 | Delco Electronics Corporation | Process for manufacture of a vertical DMOS transistor |
US6033488A (en) * | 1996-11-05 | 2000-03-07 | Samsung Electronics Co., Ltd. | Solder alloy |
JPH11267880A (ja) * | 1998-03-23 | 1999-10-05 | Ishikawa Kinzoku Kk | はんだ合金 |
US6348740B1 (en) * | 2000-09-05 | 2002-02-19 | Siliconware Precision Industries Co., Ltd. | Bump structure with dopants |
JP2002263880A (ja) * | 2001-03-06 | 2002-09-17 | Hitachi Cable Ltd | Pbフリー半田、およびこれを使用した接続用リード線ならびに電気部品 |
JP3682654B2 (ja) * | 2002-09-25 | 2005-08-10 | 千住金属工業株式会社 | 無電解Niメッキ部分へのはんだ付け用はんだ合金 |
-
2004
- 2004-09-07 JP JP2006525484A patent/JP2007533457A/ja active Pending
- 2004-09-07 WO PCT/US2004/028837 patent/WO2005027198A2/en active Search and Examination
- 2004-09-07 EP EP04783167A patent/EP1665337A4/en not_active Withdrawn
- 2004-09-07 KR KR1020067004601A patent/KR20070027485A/ko not_active Application Discontinuation
- 2004-09-07 CN CNA2004800255128A patent/CN1943030A/zh active Pending
- 2004-09-07 DE DE04783167T patent/DE04783167T1/de active Pending
- 2004-09-08 TW TW093127208A patent/TWI272152B/zh active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104169041A (zh) * | 2011-08-17 | 2014-11-26 | 霍尼韦尔国际公司 | 无铅焊料组合物 |
CN106573344A (zh) * | 2014-08-27 | 2017-04-19 | 贺利氏德国有限两合公司 | 焊膏 |
CN106660176A (zh) * | 2014-08-27 | 2017-05-10 | 贺利氏德国有限两合公司 | 用于制造焊接接头的方法 |
US10456871B2 (en) | 2014-08-27 | 2019-10-29 | Heraeus Deutschland GmbH & Co. KG | Solder paste |
US10456870B2 (en) | 2014-08-27 | 2019-10-29 | Heraeus Deutschland GmbH & Co. KG | Method for producing a soldered connection |
CN112705878A (zh) * | 2014-08-27 | 2021-04-27 | 贺利氏德国有限两合公司 | 焊膏 |
Also Published As
Publication number | Publication date |
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TW200513337A (en) | 2005-04-16 |
KR20070027485A (ko) | 2007-03-09 |
DE04783167T1 (de) | 2007-01-04 |
JP2007533457A (ja) | 2007-11-22 |
EP1665337A2 (en) | 2006-06-07 |
EP1665337A4 (en) | 2007-10-31 |
WO2005027198A3 (en) | 2005-09-22 |
TWI272152B (en) | 2007-02-01 |
WO2005027198A2 (en) | 2005-03-24 |
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