JP4993916B2 - Inハンダ被覆銅箔リボン導線及びその接続方法 - Google Patents
Inハンダ被覆銅箔リボン導線及びその接続方法 Download PDFInfo
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- JP4993916B2 JP4993916B2 JP2006022703A JP2006022703A JP4993916B2 JP 4993916 B2 JP4993916 B2 JP 4993916B2 JP 2006022703 A JP2006022703 A JP 2006022703A JP 2006022703 A JP2006022703 A JP 2006022703A JP 4993916 B2 JP4993916 B2 JP 4993916B2
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- Prior art keywords
- copper foil
- solder
- ribbon
- electrode layer
- solar cell
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 161
- 239000011889 copper foil Substances 0.000 title claims description 149
- 229910000679 solder Inorganic materials 0.000 title claims description 137
- 239000004020 conductor Substances 0.000 title claims description 83
- 238000000034 method Methods 0.000 title claims description 61
- 239000002184 metal Substances 0.000 claims description 65
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 38
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 31
- 239000011521 glass Substances 0.000 claims description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 22
- 238000005476 soldering Methods 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 239000003513 alkali Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000010949 copper Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000011888 foil Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description
図1に示すように、厚さが300μm以下、好ましくは、150〜160μm程度の長尺のリボン状の銅箔又は錫メッキ銅箔2の片面(上面又は下面の何れか一方の面)に厚さが100μm以下、好ましくは、40μm程度の前記Inハンダ3(Inが100〜90重量%、Agが10〜0重量%、好ましくは、Inが100〜97重量%、Agが3〜0重量%程度、)を被覆したInハンダ被覆錫メッキ銅箔リボン導線1(図1(c)参照。)が好ましい。
図2に示すように、前記厚さが300μm以下、好ましくは、150〜160μm程度の長尺のリボン状の銅箔又は錫メッキ銅箔2を溶融Inハンダ(Inが100〜90重量%、Agが0〜10重量%)3A中に先端から順次浸して前記リボン状の銅箔又は錫メッキ銅箔2の周囲全面にInハンダ3を被覆した後、溶融Inハンダ3Aから引出し、前記銅箔2の下面に被着している溶融Inハンダ3Aを金属ヘラH等のハンダ除去手段により除去(削ぎ落)すことにより、上面に厚さが100μm以下、好ましくは、40μm程度のInハンダ3(Inが100〜90重量%、Agが0〜10重量%、好ましくは、Inが100〜97重量%、Agが3〜0重量%程度)が被覆されたInハンダ被覆銅箔リボン導線1が作製される。前記銅箔又は錫メッキ銅箔2の片面にInハンダが被覆したInハンダ被覆銅箔リボン導線1は、前記ハンダ除去の工程で、下面及び側面に被着したInハンダ3を完全に除去することはできないし、多少は付着しても使用上問題ない。前記のように不要なInハンダ3を除去して、高価なInハンダの使用量を削減することにより、製造コストを低減することができる。
ガラス基板上に実装された電子装置として、CIS系薄膜太陽電池モジュールの場合を実例にして説明する。
CIS系薄膜太陽電池モジュールは、ガラス基板4A上にMoからなる金属裏面電極層、アルカリバリア層、光吸収層、バッファ層、窓層(透明電極層)の順に積層されたCIS系薄膜太陽電池デバイス部4Cが導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(サブモジュール)が形成され、これら太陽電池デバイス部4C同士又はこれと他の電気素子とを接続するため、銅箔又は錫メッキ銅箔2からなるリボン導線による導体接続を行う必要がある。本発明の導体間の接続方法(方法1)は、図3に示すように、露出したMo金属裏面電極層4B上に、厚さが300μm以下、好ましくは、150〜160μm程度の長尺のリボン状の銅箔又は錫メッキ銅箔2の片面のみ又は片面は厚くそれ以外の部分は薄くInハンダ(Inが100〜90重量%、Agが0〜10重量%、好ましくは、Inが100〜97重量%、Agが3〜0重量%程度)を被覆し、前記片面のInハンダの厚さが100μm以下、好ましくは、40μm程度であるInハンダ被覆銅箔リボン導線1(図1参照。)をそのInハンダ被覆面3を金属裏面電極層4Bに接して載置し、前記Inハンダ被覆銅箔リボン導線1の上面に超音波ハンダコテ5を押し当てて前記Inハンダ3を溶融させて前記金属裏面電極層4Bに前記Inハンダ被覆銅箔リボン導線1を接続する。なお、金属裏面電極層の材料として、Moを例示したが、他の金属材料にも適用することができる。
図4に示すように、露出した金属裏面電極層4B上に、予め、Inが100〜90重量%、Agが0〜10重量%、好ましくは、Inが100〜97重量%、Agが3〜0重量%程度のInハンダ3をハンダ付けし(工程1)、該Inハンダ層3上に、厚さが300μm以下、好ましくは、150〜160μm程度の長尺のリボン状の銅箔又は錫メッキ銅箔2を載置し、前記銅箔又は錫メッキ銅箔2の上面に超音波ハンダコテ5を押し当てて前記Inハンダ3を溶融させて前記金属裏面電極層4Bに前記リボン状の銅箔又は錫メッキ銅箔2を接続する(工程2)。前記導体間の接続方法(方法2)により、金属裏面電極層(又はその他の電極等)4Bに銅箔又は錫メッキ銅箔2からなるリボン導線を、低温で、簡単な工程で金属裏面電極層4Bを損傷することなく、確実且つ強固に接続し、更に、柔らかいInによる接続材料間の熱膨張係数の差による歪みの緩衝することができる。また、前記導体間の接続方法(方法2)は、CIS系薄膜太陽電池モジュールの導体間の接続に限定するものではなく、ガラス基板上に金属電極及び電子デバイスが設置された電子装置、Si系薄膜太陽電池、液晶ディスプレイパネル、プラズマディスプレイパネル、その他の電子装置にも使用できる。
2 銅(Cu)箔又は錫メッキ銅(Cu)箔
3 Inハンダ
3A 溶融Inハンダ
4A ガラス基板
4B Mo金属裏面電極層
4C 太陽電池デバイス部
5 超音波ハンダコテ
Claims (5)
- ガラス基板上にMoからなる金属裏面電極層、アルカリバリア層、光吸収層、バッファ層、窓層(透明電極層)の順に積層されたCIS系薄膜太陽電池デバイス部が導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(サブモジュール)における前記CIS系薄膜太陽電池サーキット同士又はこれと他の電気素子との接続に使用するために、露出した前記金属裏面電極層との接続に使用する導線であって、組成がIn及びAgからなり、Inの重量%が90≦In<100、Agの重量%が0<Ag≦10であることを特徴とするInハンダを長尺のリボン状の銅箔又は錫メッキ銅箔に被覆したことを特徴とするInハンダ被覆銅箔リボン導線。
- 前記長尺のリボン状の銅箔又は錫メッキ銅箔の厚さが300μm以下で、片面のみ又は片面は厚くそれ以外の部分は薄くInハンダを被覆し、前記片面のInハンダ厚さが100μm以下であることを特徴とする請求項1に記載のInハンダ被覆銅箔リボン導線。
- ガラス基板上にMoからなる金属裏面電極層、アルカリバリア層、光吸収層、バッファ層、窓層(透明電極層)の順に積層されたCIS系薄膜太陽電池デバイス部が導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(サブモジュール)同士又はこれと他の電気素子とを接続するためのCIS系薄膜太陽電池モジュールの銅箔リボン導線の接続方法であって、露出した金属裏面電極層上に、長尺のリボン状の銅箔又は錫メッキ銅箔の片面のみ又は片面は厚くそれ以外の部分は薄くInハンダを被覆し、前記Inハンダの組成が、In及びAgからなり、Inの重量%が90≦In<100、Agの重量%が0<Ag≦10で、前記Inハンダ被覆銅箔リボン導線の片面の厚いInハンダ被覆面を金属裏面電極層に接して載置し、前記Inハンダ被覆銅箔リボン導線の上面に超音波ハンダコテを押し当てて前記Inハンダを溶融させて前記金属裏面電極層に前記Inハンダ被覆銅箔リボン導線を接続することを特徴とするCIS系薄膜太陽電池モジュールの銅箔リボン導線の接続方法。
- ガラス基板上にMoからなる金属裏面電極層、アルカリバリア層、光吸収層、バッファ層、窓層(透明電極層)の順に積層されたCIS系薄膜太陽電池デバイス部が導電パターンにより電気的に接続されたCIS系薄膜太陽電池サーキット(サブモジュール)同士又はこれと他の電気素子とを接続するためのCIS系薄膜太陽電池モジュールの銅箔リボン導線の接続方法であって、露出した金属裏面電極層上に、予めInハンダをハンダ付けし、前記Inハンダの組成が、In及びAgからなり、Inの重量%が90≦In<100、Agの重量%が0<Ag≦10で、該Inハンダ層上に、長尺のリボン状の銅箔又は錫メッキ銅箔を載置し、前記リボン状の銅箔又は錫メッキ銅箔の上面に超音波ハンダコテを押し当てて前記Inハンダを溶融させて前記金属裏面電極層に前記リボン状の銅箔又は錫メッキ銅箔を接続することを特徴とするCIS系薄膜太陽電池モジュールの銅箔リボン導線の接続方法。
- 前記長尺のリボン状の銅箔又は錫メッキ銅箔の厚さが300μm以下で、前記片面のInハンダ厚さが100μm以下であることを特徴とする請求項3に記載のCIS系薄膜太陽電池モジュール又は電子装置の銅箔リボン導線の接続方法。
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2007
- 2007-01-30 US US12/162,576 patent/US20090044966A1/en not_active Abandoned
- 2007-01-30 EP EP07707715A patent/EP1981091A4/en not_active Withdrawn
- 2007-01-30 CN CN2007800039546A patent/CN101375412B/zh not_active Expired - Fee Related
- 2007-01-30 WO PCT/JP2007/051497 patent/WO2007088851A1/ja active Application Filing
- 2007-01-31 TW TW096103463A patent/TW200810642A/zh unknown
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Also Published As
Publication number | Publication date |
---|---|
CN101375412A (zh) | 2009-02-25 |
WO2007088851A1 (ja) | 2007-08-09 |
CN101375412B (zh) | 2010-12-08 |
KR101275653B1 (ko) | 2013-06-14 |
JP2007207861A (ja) | 2007-08-16 |
TW200810642A (en) | 2008-02-16 |
US20090044966A1 (en) | 2009-02-19 |
KR20080100175A (ko) | 2008-11-14 |
EP1981091A4 (en) | 2012-03-14 |
EP1981091A1 (en) | 2008-10-15 |
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