CN101375412B - In焊锡包覆的铜箔带状导线及其连接方法 - Google Patents

In焊锡包覆的铜箔带状导线及其连接方法 Download PDF

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CN101375412B
CN101375412B CN2007800039546A CN200780003954A CN101375412B CN 101375412 B CN101375412 B CN 101375412B CN 2007800039546 A CN2007800039546 A CN 2007800039546A CN 200780003954 A CN200780003954 A CN 200780003954A CN 101375412 B CN101375412 B CN 101375412B
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copper foil
scolding tin
mentioned
ribbon conductor
conductor wire
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CN101375412A (zh
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田泽健一
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Showa Shell Sekiyu KK
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Showa Shell Sekiyu KK
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor

Abstract

本发明提供In焊锡包覆铜箔带状导线及其连接方法。该方法可无破损地、低成本、可靠且牢固地连接玻璃基板上的导体电极与带状导线，将仅在厚度为300μm以下的铜箔或镀锡铜箔(2)的一面上包覆了厚度为100μm以下的In焊锡(3)、或在一面上包覆上述In焊锡(3)而除了该一面之外的其他面上包覆很少In焊锡(3)(上述焊锡(3)中，In 100～90％、Ag 10～0％)而成的In焊锡包覆铜箔带状导线(1)载置在玻璃基板(4A)上的Mo金属背面电极层(4B)的露出部上之后，将超声波钎焊烙铁(5)压接到上述铜箔带状导线(1)的上表面上，使上述In焊锡(3)熔融，从而将上述铜箔带状导线(1)连接于上述电极层(4B)上。另外，也有这样的方法：预先在上述电极层(4B)上钎焊In焊锡(3)(与上述组成相同)之后，将带状的铜箔或镀锡铜箔(2)载置到其上，利用超声波钎焊烙铁(5)将上述铜箔(2)连接于上述电极层(4B)上。

Description

In焊锡包覆的铜箔带状导线及其连接方法 
技术领域
本发明涉及一种用于将安装于玻璃基板上的电子装置的导体之间连接的In(铟)焊锡包覆(indium solder coated)的铜箔带状导线及其连接方法。 
背景技术
在半导体零件等电子装置安装于印刷电路板或塑料树脂基板等除了玻璃基板以外的基板上的情况下，在连接该电子装置的电极和基板上的电路布线时、在连接上述电路布线和外部电极时等，出于对环境问题、基板材料、电极、电路布线等材料的性质以及生产率等的考虑，开发出避免使用含铅焊锡的、特殊的焊锡材料以及钎焊方法。 
对于上述半导体零件等电子装置上的半导体装置的电极和基板上的电路布线的连接、上述电路布线和外部电极的连接有如下方法：使用含In的焊锡，利用超声波压焊法进行固定而连接导线之间的方法(例如，参照专利文献1)；使用含In的导电性树脂，利用超声波工具对连接部位施加超声波而进行连接的方法(例如，参照专利文献2)；使用含In的导电粘接剂，对连接部位施加超声波振动而进行连接的方法(例如，参照专利文献3)等。 
另外，对于相同的半导体零件等电子装置上的半导体装置的电极和基板上的电路布线的连接、上述电路布线和外部电极的连接有如下方法：使用在含锡的焊锡主体的表面包覆了In的焊锡进行导体连接的方法；或是在上述电极、电路布线、外部电极等的表面上包覆In而不使用焊锡的焊锡压焊固定的方法(例如，参考专利文献4。)，该方法中In和作为电路布线等材料的Cu的接合强度较大，从而具有利用柔软的In缓解因连接材料之间的热膨胀系数之差导致的变形的效果等。 
专利文献1：日本特开平10-84055号公报 
专利文献2：日本特开2000-332373号公报 
专利文献3：日本特开2002-76587号公报 
专利文献4：再公表特许(WO 97/00753)号公报 
本发明的对象是电子装置、例如薄膜太阳电池等，上述电子装置形成在玻璃基板上，其电极膜(或层)或者导电膜(或层)的材质使用除了Cu以外的Mo等金属或ITO(透明导电膜)，该膜(或层)的厚度等极薄，机械强度较低，从而容易破损，因此在与作为连接对象物的带状的镀锡铜箔(带状导线)相连接时，若利用采用了上述以往的焊锡的连接方法，难以不损伤金属背面电极层地可靠地固定上述金属背面电极层和带状导线两者。 
开且，上述专利文献1～4中所述的半导体等电子装置是安装于印刷电路板或者塑料树脂基板等除了玻璃基板以外的基板上的，在电极膜(或层)或者导电膜(或层)的材质、该膜(或层)的厚度以及机械强度方面有很大差异，难以将安装于上述除了玻璃基板以外的基板上的半导体等电子装置的导体连接方法直接转用成安装于本发明对象的玻璃基板上的电子装置的导体连接方法。 
发明内容
本发明解决了上述问题点，其目的在于提供一种可通过降低高价的In焊锡的使用量来降低生产成本、且可简单且牢固地进行导体连接的In焊锡包覆铜箔带状导线及其制造方法，并提 供一种在使用了上述In焊锡包覆铜箔带状导线或In焊锡的简单且较少的工序中，不会损坏电极膜或者导电膜地可靠且牢固地将两者固定、利用柔软的In缓解因连接材料之间的热膨胀系数之差导致的变形的铜箔或者镀锡铜箔带状导线的连接方法。 
(1)本发明是为了解决上述问题点而做成的，其是一种仅在长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面上包覆较厚In焊锡而在除了该一面之外的其他部分包覆较薄的In焊锡而成的In焊锡包覆铜箔带状导线。 
(2)本发明提供一种上述(1)所述的In焊锡包覆铜箔带状导线，上述长条带状的铜箔或者镀锡铜箔的厚度为300μm以下，上述In焊锡的组成是由In以及Ag构成，In占100～90重量％，Ag占10～0重量％，上述一面的In焊锡厚度为100μm以下。 
(3)本发明提供一种上述(1)或者(2)所述的In焊锡包覆铜箔带状导线，其用于连接CIS系薄膜太阳电池电路(子组件submodule)上的、上述CIS系薄膜太阳电池电路彼此之间或CIS系薄膜太阳电池电路与其他电气元件，该CIS系薄膜太阳电池电路是通过导电图案将在玻璃基板上依次层叠金属背面电极层、碱性势垒层、光吸收层、缓冲层、窗层(透明电极层)而得到的CIS系薄膜太阳电池器件电连接而成的，上述金属背面电极层由Mo构成。 
(4)本发明提供一种上述(1)或者(2)所述的In焊锡包覆铜箔带状导线，其用于将在玻璃基板上设置有金属电极以及电子器件的电子装置上的上述金属电极与电子器件电连接、或将上述金属电极与外部电极电连接。 
(5)本发明提供一种In焊锡包覆铜箔带状导线的制造方法，将长条带状的铜箔或镀锡铜箔自前端顺次浸到熔融In焊锡中之后，将铜箔或镀锡铜箔自熔融In焊锡中抽出，用金属刮刀 等焊锡除去部件除去(刮掉)粘附在上述铜箔下表面上的熔融In焊锡，从而在上述铜箔或镀锡铜箔的上表面或下表面中任意一面上包覆有In焊锡。 
(6)本发明提供一种In焊锡包覆铜箔带状导线的制造方法，将长条带状的铜箔或镀锡铜箔自前端顺次浸到熔融In焊锡中，从而在上述带状的铜箔或镀锡铜箔的周围整面上包覆有In焊锡，然后，将铜箔或镀锡铜箔自上述熔融In焊锡中抽出，用金属刮刀等焊锡除去部件除去(刮掉)粘附在上述铜箔下表面上的熔融In焊锡，使包覆在上表面上的In焊锡的厚度大于包覆在下表面上的In焊锡的厚度。 
(7)本发明提供一种上述(5)或者(6)所述的In焊锡包覆铜箔带状导线的制造方法，上述长条带状的铜箔或镀锡铜箔的厚度为300μm以下，上述In焊锡的组成是由In以及Ag构成，In占100～90重量％，Ag占10～0重量％，上述一面的In焊锡厚度为100μm以下。 
(8)本发明提供一种CIS系薄膜太阳电池组件的铜箔带状导线的连接方法，该方法用于连接CIS系薄膜太阳电池电路(子组件)彼此之间或CIS系薄膜太阳电池电路与其他电气元件之间，该CIS系薄膜太阳电池电路是通过导电图案将在玻璃基板上依次层叠金属背面电极层、碱性势垒层、光吸收层、缓冲层、窗层(透明电极层)而得到的CIS系薄膜太阳电池器件部电连接而成的，上述金属背面电极层由Mo构成；其中，仅在长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面包覆较厚In焊锡而在除了该一面之外的其他部分包覆较薄的In焊锡，使上述In焊锡包覆铜箔带状导线的包覆较厚一面的In焊锡包覆面与金属背面电极层相接触地将上述In焊锡包覆铜箔带状导线载置在露出来的金属背面电极层上，将超声波钎焊烙铁压接 到上述In焊锡包覆铜箔带状导线的上表面上，使上述In焊锡熔融，从而将上述In焊锡包覆铜箔带状导线连接于上述金属背面电极层上。 
(9)本发明提供一种电子装置的铜箔带状导线的连接方法，该方法用于将在玻璃基板上设置有金属电极以及电子器件的电子装置上的上述金属电极与电子器件电连接、或将上述金属电极与外部电极电连接，其中，仅在长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面包覆较厚In焊锡而在除了该一面之外的其他部分包覆较薄的In焊锡，使上述铜箔带状导线的包覆较厚一面的In焊锡包覆面与金属背面电极层相接触地将上述铜箔带状导线载置在露出来的金属背面电极层上，一边对超声波钎焊烙铁进行加热一边将其压接到上述In焊锡包覆铜箔带状导线的上表面上，使上述In焊锡熔融，从而将上述In焊锡包覆铜箔带状导线连接于上述金属背面电极层上。 
(10)本发明提供一种CIS系薄膜太阳电池组件的铜箔带状导线的连接方法，其用于连接CIS系薄膜太阳电池电路(子组件)彼此之间、或CIS系薄膜太阳电池电路与其他电气元件之间，该CIS系薄膜太阳电池电路是通过导电图案将在玻璃基板上依次层叠金属背面电极层、碱性势垒层、光吸收层、缓冲层、窗层(透明电极层)而得到的CIS系薄膜太阳电池器件部电连接而成的，上述金属背面电极层由Mo构成，其中，预先在露出来的金属背面电极层上锡焊In焊锡，将长条带状的铜箔或镀锡铜箔载置于该In焊锡层上，将超声波钎焊烙铁压接到上述带状的铜箔或镀锡铜箔的上表面上，使上述In焊锡熔融，从而将上述带状的铜箔或镀锡铜箔连接于上述金属背面电极层上。 
(11)本发明提供一种电子装置的铜箔带状导线的连接方法，其用于将在玻璃基板上设置有金属电极以及电子器件的电 子装置上的上述金属电极与电子器件电连接、或将上述金属电极与外部电极电连接，其中，预先在露出来的金属背面电极层上锡焊In焊锡，将长条带状的铜箔或镀锡铜箔载置于该In焊锡层上，一边对超声波钎焊烙铁进行加热一边将其压接到上述带状的铜箔或镀锡铜箔的上表面上，使上述In焊锡熔融，从进将上述带状的铜箔或镀锡铜箔连接于上述金属背面电极层上。 
(12)本发明提供一种上述(8)～(11)中任意一项所述的CIS系薄膜太阳电池组件或电子装置的铜箔带状导线的连接方法，上述长条带状的铜箔或镀锡铜箔的厚度为300μm以下，上述In焊锡的组成是由In以及Ag构成，In占100～90重量％，Ag占10～0重量％，上述一面的In焊锡厚度为100μm以下。 
采用本发明的In焊锡包覆铜箔带状导线、即仅在厚度为300μm以下的长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面上包覆较厚In焊锡而在除了该一面之外的其他部分包覆较薄的In焊锡而成的In焊锡包覆铜箔带状导线，可以降低高价的In焊锡的使用量，并且可以不损伤金属背面电极层等地将形成于玻璃基板上的金属背面电极层、其他电极或导电膜与In焊锡包覆铜箔带状导线可靠地固定连接起来，可以利用柔软的In缓解因连接材料之间的热膨胀系数之差导致的变形。 
采用本发明的上述薄膜太阳电池或其他电子装置中的使用了In焊锡包覆铜箔带状导线的连接方法、即In焊锡包覆铜箔带状导线的连接方法(方法1)可以不损伤金属背面电极层地将In焊锡包覆铜箔带状导线可靠地连接于金属背面电极层(或其他电极等)上。上述In焊锡包覆铜箔带状导线的连接方法(方法1)是指：仅在厚度为300μm以下的长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面包覆较厚In焊锡而在除了该一面之外的其他部分包覆较薄的In焊锡，上述In焊锡中In占100～90重量％、Ag占10～0重量％，从而做成In焊锡包覆铜箔带状导线，使其In焊锡包覆面与金属背面电极层相接触地将该In焊锡包覆铜箔带状导线载置在形成于玻璃基板上的、露出来的金属电极层上，一边对超声波钎焊烙铁进行加热一边将其压接到上述In焊锡包覆铜箔带状导线的上表面上，使上述I n焊锡熔融，从而将上述In焊锡包覆铜箔带状导线连接于上述金属背面电极层(或其他电极等)上。
采用本发明的上述薄膜太阳电池或其他电子装置中的使用了In焊锡包覆铜箔带状导线的连接方法，即采用铜箔带状导线的连接方法(方法2)可以不损伤金属背面电极层地将铜箔或镀锡铜箔带状导线可靠地连接于金属背面电极层(或其他电极等)上。上述铜箔带状导线的连接方法(方法2)是指：预先在形成于玻璃基板上的、露出来的金属电极层上钎焊In占100～90重量％、Ag占0～10重量％的In焊锡、在其上面载置厚度为300μm以下的长条带状的铜箔或镀锡铜箔，一边对超声波钎焊烙铁进行加热一边将其压接到上述带状的铜箔或镀锡铜箔的上表面上，使上述In焊锡熔融，从而将上述带状的铜箔或镀锡铜箔连接于上述金属背面电极层(或其他电极等)上。 
另外，方法1(1个工序)的情况与方法2(2个工序)的情况相比，工序数量少、In焊锡的使用量也少，因此可以降低制造成本，并可以不损失金属背面电极层地更可靠且牢固地将上述金属背面电极层和带状导线连接起来。 
附图说明
图1是本发明的In焊锡包覆铜(Cu)箔带状导线的概略结构图。 
图2是本发明的In焊锡包覆铜(Cu)箔带状导线的制造方法的说明图。 
图3是本发明的In焊锡包覆铜(Cu)箔带状导线的连接方法(方法1)的说明图。 
图4是本发明的由铜箔或镀锡铜箔构成的带状导线的连接方法(方法2)的说明图。 
附图标记说明
1、In焊锡包覆铜(Cu)箔带状导线；2、铜(Cu)箔或镀锡铜(Cu)箔；3、In焊锡；3A、熔融In焊锡；4A、玻璃基板；4B、Mo金属背面电极层；4C、太阳电池器件部；5、超声波钎焊烙铁。 
具体实施方式
本发明涉及一种适合用于对安装在玻璃基板上的电子装置、例如CIS系薄膜太阳电池、Si系薄膜太阳电池、液晶显示器面板、等离子显示器面板等的电极膜(或层)或者导电膜(或层)与带状导线(铜箔或镀锡铜箔带状导线)进行导体连接的In焊锡包覆铜箔带状导线及使用了该In焊锡或In焊锡包覆镀锡铜箔带状导线的导体连接方法。 
由于上述电子装置的电极膜(或层)或者导电膜(或层)形成于玻璃基板上，因此，其材质使用除了Cu以外的Mo等金属或ITO(透明导电膜)，该膜(或层)的厚度等极薄，机械强度较低，从而容易破损。 
因此，不能直接利用对安装在除了玻璃基板以外的基板上的电子装置进行导体连接所使用的焊锡、或使用了该焊锡的导体连接方法。 
因此，首先，选择且开发了适合于对安装在玻璃基板上的电子装置、例如CIS系薄膜太阳电池、Si系薄膜太阳电池、液 晶显示装置等的电极膜或导电膜与带状导线(铜箔或镀锡铜箔带状导线)进行导体连接的焊锡。 
本发明人发现，最适于上述导体连接的In(铟)焊锡是In占100～90重量％、Ag占10～0重量％，优选In占100～97重量％、Ag占3～0重量％左右。 
下面说明第1技术方案的In焊锡包覆(铜箔或镀锡铜箔)铜箔带状导线。 
如图1所示，优选在厚度为300μm以下、优选150～160μm左右的长条带状的铜箔或镀锡铜箔2的一面(上表面或下表面中任意一面)上包覆了厚度为100μm以下、优选40μm左右的上述In焊锡3(In占100～90重量％、Ag占10～0重量％，优选In占100～97重量％、Ag占3～0重量％左右)而成的In焊锡包覆镀锡铜箔带状导线1(参照图1(c))。 
但是，在上述In焊锡包覆铜箔带状导线1上包覆上述In焊锡3时，也在上述镀锡铜(Cu)箔2的除了上表面或下表面任意一面以外的部分上包覆了In焊锡3，因此如图1(a)以及(b)所示，即使是在铜箔或镀锡铜箔2的上表面或下表面任意一面上包覆厚度为100μm以下(优选40μm左右)的In焊锡、在其他面上的In焊锡的包覆量(厚度)少于上述面的In焊锡包覆量的In焊锡包覆铜箔带状导线1在使用上也不会有问题。 
接着，下面说明第2技术方案的In焊锡包覆铜箔带状导线1的制造方法，该方法是仅在铜(Cu)箔或镀锡铜(Cu)箔2的一面上包覆In焊锡、或在一面包覆较厚的In焊锡而在除了该一面以外的其他部分包覆较薄的In焊锡，上述一面的In焊锡(In占100～90重量％、Ag占0～10重量％，In优选100～97重量％、Ag优选3～0重量％左右)的厚度为100μm以下(优选40μm左右)。 
如图2所示，将上述厚度在300μm以下、优选150～160μm左右的长条带状的铜箔或镀锡铜箔2自前端顺次浸到熔融In焊锡(In占100～90重量％、Ag占0～10重量％)3A中，从而在上述带状的铜箔或镀锡铜箔2的周围整面上包覆有In焊锡3，然后，将铜箔或镀锡铜箔2自熔融In焊锡3A中抽出，利用金属刮刀H等焊锡除去部件除去(刮掉)粘附在上述铜箔2的下表面上的熔融In焊锡3A，从而制作成了在上表面包覆有厚度为100μm以下、优选40μm左右的In焊锡3(In占100～90重量％、Ag占0～10重量％，优选In占100～97重量％、Ag占3～0重量％左右)的In焊锡包覆铜箔带状导线1。 
在上述铜箔或镀锡铜箔2的一面上包覆了In焊锡而成的In焊锡包覆铜箔带状导线1，即使在上述焊锡除去工序中不能完全除去粘附在下表面以及侧面上的In焊锡3，稍微附着一些，在使用上也没有问题。 
通过如上所述地除去不需要的In焊锡3，降低高价的In焊锡的使用量，能够降低制造成本。 
接着，下面说明第3技术方案的使用了上述In焊锡包覆铜箔带状导线1的对安装在玻璃基板上的电子装置的导体之间进行连接的连接方法。 
作为安装在玻璃基板上的电子装置，以CIS系薄膜太阳电池组件的情况为实例进行说明。 
在CIS系薄膜太阳电池组件中形成有通过导电图案电连接CIS系薄膜太阳电池器件部4C而成的CIS系薄膜太阳电池电路(子组件)，该CIS系薄膜太阳电池器件部4C是在玻璃基板4A上依次层叠金属背面电极层、碱性势垒层、光吸收层、缓冲层、窗层(透明电极层)而成的，上述金属背面电极层由Mo构成，为了将上述太阳电池器件部4C彼此之间或将太阳电池器件部 4C与其他电气元件连接起来，必须利用由铜箔或镀锡铜箔2构成的带状导线进行导体连接。本发明的导体之间的连接方法(方法1)，如图3所示，仅在厚度为300μm以下、优选150～160μm左右的长条带状的铜箔或镀锡铜箔2的一面上包覆In焊锡、或在一面包覆较厚In焊锡而在除了该一面以外的其他部分上包覆较薄的In焊锡(上述In焊锡中，In占100～90重量％、Ag占0～10重量％，优选In占100～97重量％、Ag占3～0重量％左右)，从而做成上述一面的In焊锡厚度为100μm以下、优选40μm左右的In焊锡包覆铜箔带状导线1(参照图1)，使其In焊锡包覆面3与金属背面电极层4B相接触地将该In焊锡包覆铜箔带状导线1载置在露出来的Mo金属电极层4B上，将超声波钎焊烙铁5压接到上述In焊锡包覆铜箔带状导线1的上表面而使上述In焊锡3熔融，从而将上述In焊锡包覆铜箔带状导线1连接于上述金属背面电极层4B上。 
另外，作为金属背面电极层的材料，虽然例示了Mo，但也可以应用其他金属材料。 
利用上述导体之间的连接方法(方法1)可以不损伤金属背面电极层4B地、以低温且简单的工序可靠且牢固地将In焊锡包覆铜箔带状导线1连接于金属背面电极层(或其它电极等)4B上，并且，还能利用柔软的In缓解因连接材料之间的热膨胀系数之差导致的变形。 
另外，上述导体之间的连接方法(方法1)并不只限定于CIS系薄膜太阳电池组件的导体之间的连接，也可以用于在玻璃基板上设置有金属电极以及电子器件的电子装置、Si系薄膜太阳电池、液晶显示器面板、等离子显示器面板、其他电子装置。 
接着，下面说明第4技术方案的使用了上述In焊锡包覆铜 箔带状导线1的对安装在玻璃基板上的电子装置的导体之间进行连接的另一连接方法(方法2)(作为安装在玻璃基板上的电子装置，以CIS系薄膜太阳电池组件为实例)。 
如图4所示，预先在露出来的金属背面电极层4B上钎焊In焊锡3(工序1)，该In焊锡3中In占100～90重量％、Ag占0～10重量％，优选In占100～97重量％、Ag占3～0重量％左右，在该In焊锡层3上载置厚度为300μm以下、优选150～160μm左右的长条带状的铜箔或镀锡铜箔2，将超声波钎焊烙铁5压接到上述铜箔或镀锡铜箔2的上表面而使上述In焊锡3熔融，从而将上述带状的铜箔或镀锡铜箔2连接在上述金属背面电极层4B上(工序2)。 
利用上述导体之间的连接方法(方法2)，可以不损伤金属背面电极层4B地、以低温且简单的工序可靠且牢固地将由铜箔或镀锡铜箔2构成的带状导线连接在金属背面电极层(或其它电极等)4B上，并且还能利用柔软的In缓解因连接材料之间的热膨胀系数之差导致的变形。 
另外，上述导体之间的连接方法(方法2)并不只限定于CIS系薄膜太阳电池组件的导体之间的连接，也可以用于在玻璃基板上设置有金属电极以及电子器件的电子装置、Si系薄膜太阳电池、液晶显示器面板、等离子显示器面板、其他电子装置。 
在该导体之间的连接方法(方法2)中，增加了预先钎焊In焊锡3的工序，因此，与上述导体之间的连接方法(方法1)相比增多了工程数量。并且，方法1(参考图3)在上述金属背面电极层与带状导线之间的紧固力方面也比较优秀。 
工业实用性
采用本发明的技术方案(1)～(12)，可以降低高价的In 焊锡的使用量，并且可以不损伤金属背面电极层等地、可靠地将形成于玻璃基板上的金属背面电极层、其他电极或导电膜与In焊锡包覆铜箔带状导线固定连接，可以利用柔软的In缓解由连接材料之间的热膨胀系数之差导致的变形，在工业上的可利用性极大。 

Claims (3)

1.一种In焊锡包覆的铜箔带状导线，其特征在于，仅在长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面包覆In焊锡而在除了该一面之外的其他部分包覆比该一面薄的In焊锡而成，上述In焊锡的组成是由In以及Ag构成，In占100～90重量％、Ag占10～0重量％，该In焊锡包覆的铜箔带状导线用于连接CIS系薄膜太阳电池电路彼此之间、或连接该CIS系薄膜太阳电池电路与其他电气元件，该CIS系薄膜太阳电池电路是通过导电图案将在玻璃基板上依次层叠金属背面电极层、碱性势垒层、光吸收层、缓冲层、窗层而得到的CIS系薄膜太阳电池器件部电连接而成的，上述金属背面电极层由Mo构成。
2.根据权利要求1所述的In焊锡包覆的铜箔带状导线，其特征在于，上述长条带状的铜箔或镀锡铜箔的厚度为300μm以下，上述一面的In焊锡厚度为100μm以下。
3.一种CIS系薄膜太阳电池组件的铜箔带状导线的连接方法，该方法用于连接CIS系薄膜太阳电池电路彼此之间、或连接该CIS系薄膜太阳电池电路与其他电气元件，该CIS系薄膜太阳电池电路是通过导电图案将在玻璃基板上依次层叠金属背面电极层、碱性势垒层、光吸收层、缓冲层、窗层而得到的CIS系薄膜太阳电池器件部电连接而成的，上述金属背面电极层由Mo构成，其特征在于，仅在长条带状的铜箔或镀锡铜箔的一面上包覆In焊锡、或在一面包覆In焊锡而在除了该一面之外的其他部分包覆比该一面薄的In焊锡，使上述In焊锡包覆的铜箔带状导线的包覆相对较厚一面的In焊锡包覆面与金属背面电极层相接触地将该In焊锡包覆的铜箔带状导线载置在露出来的金属背面电极层上，将超声波钎焊烙铁压接到上述In焊锡包覆的铜箔带状导线的上表面上，使上述In焊锡熔融，从而将上述In焊锡包覆的铜箔带状导线连接于上述金属背面电极层上，上述长条带状的铜箔或镀锡铜箔的厚度为300μm以下，上述In焊锡的组成是由In以及Ag构成，In占100～90重量％，Ag占10～0重量％，上述一面的In焊锡厚度为100μm以下。
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