JP4844393B2 - ダイボンディング接合方法と電子部品 - Google Patents
ダイボンディング接合方法と電子部品 Download PDFInfo
- Publication number
- JP4844393B2 JP4844393B2 JP2006514079A JP2006514079A JP4844393B2 JP 4844393 B2 JP4844393 B2 JP 4844393B2 JP 2006514079 A JP2006514079 A JP 2006514079A JP 2006514079 A JP2006514079 A JP 2006514079A JP 4844393 B2 JP4844393 B2 JP 4844393B2
- Authority
- JP
- Japan
- Prior art keywords
- mass
- solder
- atomic
- solder alloy
- die bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29109—Indium [In] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0133—Ternary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
Description
(1)Cu0.3〜1.0質量%、Ni0.01〜0.1質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、
(2)Ag3.0〜4.0質量%、Cu0.3〜1.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、および
(3)In0.2〜2.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金;
(I)30〜50原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜
(II)10〜30原子%In、40〜60原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜。
下記(1)〜(3)から選ばれたSn主成分の鉛フリーはんだ合金からなすダイボンディング用ペレットを略同一形状の基板と半導体素子との間に挟んでリ50ppm以下の酸素を含む水素窒素混合ガス雰囲気下で235℃以上に3分間、ピーク温度280℃で加熱してフラックスレスのフローはんだ付けによりダイボンディング接合をして得た半導体素子と基板とダイボンディング接合した部分とから成り、ダイボンディング接合した部分のはんだ合金表面にはんだ合金(1)および(2)、または(3)にそれぞれ対応して下記(I)または(II)に規定する厚さ0.5〜20nmの無色透明の保護膜を備え、しかも該ダイボンディング接合の接合面におけるボイド率が10%以下であることを特徴とする電子部品である。
(1)Cu0.3〜1.0質量%、Ni0.01〜0.1質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、
(2)Ag3.0〜4.0質量%、Cu0.3〜1.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、または
(3)In0.2〜2.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金;
(I)30〜50原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜
(II)10〜30原子%In、40〜60原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜。
ここで、保護膜の厚みおよび金属組成はxpsにより、0.2nm単位でスパッタリングし、深さ方向の情報を収集し、またボイド率は、X線透過タイプの断面観察装置を用いて50倍で測定した。
Claims (2)
- 下記(1)〜(3)から選ばれたはんだ合金からなるダイボンディング用ペレットを略同一形状の基板と半導体素子との間に挟み込み、50ppm以下の酸素を含む水素窒素混合ガス雰囲気下で235℃以上に3分間、ピーク温度280℃で加熱してフラックスレスのリフローはんだ付けを行い、このときのはんだ付けの加熱により、ダイボンディング接合のはんだ合金表面に、はんだ合金(1)および(2)、または(3)にそれぞれ対応して、下記(I)または(II)に規定する厚さ0.5〜20nmの無色透明の保護膜を形成させることを特徴とする、ダイボンディング接合方法。
(1)Cu0.3〜1.0質量%、Ni0.01〜0.1質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、
(2)Ag3.0〜4.0質量%、Cu0.3〜1.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、および
(3)In0.2〜2.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金;
(I)30〜50原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜
(II)10〜30原子%In、40〜60原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜。 - 下記(1)〜(3)から選ばれたSn主成分の鉛フリーはんだ合金からなすダイボンディング用ペレットを略同一形状の基板と半導体素子との間に挟み込み、50ppm以下の酸素を含む水素窒素混合ガス雰囲気下で235℃以上に3分間、ピーク温度280℃で加熱してフラックスレスのフローはんだ付けによりダイボンディング接合をして得た半導体素子と基板とダイボンディング接合した部分とから成り、ダイボンディング接合した部分のはんだ合金表面にはんだ合金(1)および(2)、または(3)にそれぞれ対応して下記(I)または(II)に規定する厚さ0.5〜20nmの無色透明の保護膜を備え、しかも該ダイボンディング接合の接合面におけるボイド率が10%以下であることを特徴とする電子部品。
(1)Cu0.3〜1.0質量%、Ni0.01〜0.1質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、
(2)Ag3.0〜4.0質量%、Cu0.3〜1.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金、または
(3)In0.2〜2.0質量%、P0.0001〜0.02質量%、残部Snからなるはんだ合金;
(I)30〜50原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜
(II)10〜30原子%In、40〜60原子%0(酸素)、5〜15原子%Pおよび残部Snからなる保護膜。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006514079A JP4844393B2 (ja) | 2004-06-01 | 2005-05-26 | ダイボンディング接合方法と電子部品 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004163062 | 2004-06-01 | ||
JP2004163062 | 2004-06-01 | ||
JP2006514079A JP4844393B2 (ja) | 2004-06-01 | 2005-05-26 | ダイボンディング接合方法と電子部品 |
PCT/JP2005/009630 WO2005119755A1 (ja) | 2004-06-01 | 2005-05-26 | はんだ付け方法、ダイボンディング用はんだペレット、ダイボンディングはんだペレットの製造方法および電子部品 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011173895A Division JP5403011B2 (ja) | 2004-06-01 | 2011-08-09 | ダイボンディング接合された電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005119755A1 JPWO2005119755A1 (ja) | 2008-04-03 |
JP4844393B2 true JP4844393B2 (ja) | 2011-12-28 |
Family
ID=35463124
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006514079A Active JP4844393B2 (ja) | 2004-06-01 | 2005-05-26 | ダイボンディング接合方法と電子部品 |
JP2011173895A Active JP5403011B2 (ja) | 2004-06-01 | 2011-08-09 | ダイボンディング接合された電子部品 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011173895A Active JP5403011B2 (ja) | 2004-06-01 | 2011-08-09 | ダイボンディング接合された電子部品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080246164A1 (ja) |
EP (1) | EP1783827A4 (ja) |
JP (2) | JP4844393B2 (ja) |
CN (1) | CN1977368B (ja) |
WO (1) | WO2005119755A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007110016A (ja) * | 2005-10-17 | 2007-04-26 | Denso Corp | 半導体装置およびその製造方法 |
JP4904953B2 (ja) | 2006-04-06 | 2012-03-28 | 日立電線株式会社 | 配線用導体及びその製造方法並びに端末接続部並びにPbフリーはんだ合金 |
JP5071802B2 (ja) * | 2008-04-08 | 2012-11-14 | 日立金属株式会社 | はんだボール、はんだ層及びはんだバンプ |
CN102132638B (zh) * | 2008-08-21 | 2014-01-29 | 艾格瑞系统有限公司 | 在sn膜中晶须的减少 |
CN102660723B (zh) * | 2012-05-17 | 2014-03-12 | 合肥工业大学 | 一种用于铜线、铜包覆金属复合线材连续热浸镀的稀土改性锡合金及其制备方法 |
US9676047B2 (en) | 2013-03-15 | 2017-06-13 | Samsung Electronics Co., Ltd. | Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same |
CN112705878A (zh) | 2014-08-27 | 2021-04-27 | 贺利氏德国有限两合公司 | 焊膏 |
HUE038343T2 (hu) | 2014-08-27 | 2018-10-29 | Heraeus Deutschland Gmbh & Co Kg | Eljárás forrasztott kapcsolat kialakítására |
US10957030B2 (en) | 2018-08-14 | 2021-03-23 | International Business Machines Corporation | Image conduction apparatus for soldering inner void analysis |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0449630A (ja) * | 1990-06-19 | 1992-02-19 | Sumitomo Metal Mining Co Ltd | 半導体装置組立て用合金ろう材 |
JPH0592292A (ja) * | 1991-06-27 | 1993-04-16 | Mitsubishi Materials Corp | はんだ付け方法 |
JPH0629331A (ja) * | 1992-07-09 | 1994-02-04 | Nec Corp | ダイボンディング装置 |
JPH1158066A (ja) * | 1997-08-07 | 1999-03-02 | Fuji Electric Co Ltd | はんだ合金 |
JP2001284792A (ja) * | 2000-03-30 | 2001-10-12 | Tanaka Electronics Ind Co Ltd | 半田材料及びそれを用いた半導体装置の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0265077A3 (en) * | 1986-09-25 | 1989-03-08 | Sheldahl, Inc. | An anisotropic adhesive for bonding electrical components |
FI98899C (fi) * | 1994-10-28 | 1997-09-10 | Jorma Kalevi Kivilahti | Menetelmä elektroniikan komponenttien liittämiseksi juottamalla |
JP3414017B2 (ja) * | 1994-12-09 | 2003-06-09 | ソニー株式会社 | 半導体装置 |
JP2001144111A (ja) * | 1999-11-12 | 2001-05-25 | Tanaka Electronics Ind Co Ltd | 半導体装置の製造方法 |
JP2002184240A (ja) * | 2000-12-12 | 2002-06-28 | Totoku Electric Co Ltd | 錫めっき線及び錫合金はんだめっき線 |
TW592872B (en) * | 2001-06-28 | 2004-06-21 | Senju Metal Industry Co | Lead-free solder alloy |
CN1203960C (zh) * | 2003-01-15 | 2005-06-01 | 深圳市亿铖达工业有限公司 | 具有抗氧化能力的无铅焊料 |
CN1239290C (zh) * | 2003-04-11 | 2006-02-01 | 深圳市亿铖达工业有限公司 | 波峰焊用无铅软钎焊料合金 |
-
2005
- 2005-05-26 JP JP2006514079A patent/JP4844393B2/ja active Active
- 2005-05-26 CN CN2005800215356A patent/CN1977368B/zh active Active
- 2005-05-26 EP EP05743795A patent/EP1783827A4/en not_active Withdrawn
- 2005-05-26 WO PCT/JP2005/009630 patent/WO2005119755A1/ja active Application Filing
- 2005-05-26 US US11/628,297 patent/US20080246164A1/en not_active Abandoned
-
2011
- 2011-08-09 JP JP2011173895A patent/JP5403011B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0449630A (ja) * | 1990-06-19 | 1992-02-19 | Sumitomo Metal Mining Co Ltd | 半導体装置組立て用合金ろう材 |
JPH0592292A (ja) * | 1991-06-27 | 1993-04-16 | Mitsubishi Materials Corp | はんだ付け方法 |
JPH0629331A (ja) * | 1992-07-09 | 1994-02-04 | Nec Corp | ダイボンディング装置 |
JPH1158066A (ja) * | 1997-08-07 | 1999-03-02 | Fuji Electric Co Ltd | はんだ合金 |
JP2001284792A (ja) * | 2000-03-30 | 2001-10-12 | Tanaka Electronics Ind Co Ltd | 半田材料及びそれを用いた半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1783827A4 (en) | 2009-10-28 |
JPWO2005119755A1 (ja) | 2008-04-03 |
CN1977368B (zh) | 2010-04-07 |
US20080246164A1 (en) | 2008-10-09 |
CN1977368A (zh) | 2007-06-06 |
JP2011249839A (ja) | 2011-12-08 |
EP1783827A1 (en) | 2007-05-09 |
WO2005119755A1 (ja) | 2005-12-15 |
JP5403011B2 (ja) | 2014-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5403011B2 (ja) | ダイボンディング接合された電子部品 | |
EP1889684B1 (en) | Lead-free solder alloy | |
JP5369682B2 (ja) | フォームはんだおよび電子部品 | |
JP3761678B2 (ja) | 錫含有鉛フリーはんだ合金及びそのクリームはんだ並びにその製造方法 | |
JP5590272B1 (ja) | 鉛フリーはんだ合金 | |
US9773721B2 (en) | Lead-free solder alloy, connecting member and a method for its manufacture, and electronic part | |
JP2012121053A (ja) | Znを主成分とするPbフリーはんだ合金 | |
KR101165426B1 (ko) | 무연 솔더 합금 | |
JP2001284792A (ja) | 半田材料及びそれを用いた半導体装置の製造方法 | |
JP2018079480A (ja) | 低温用のBi−In−Sn系はんだ合金、それを用いた電子部品実装基板及びその実装基板を搭載した装置 | |
JPWO2018168858A1 (ja) | はんだ材 | |
JP2011062736A (ja) | 鉛フリー高温用接合材料 | |
WO2020158660A1 (ja) | はんだ接合部 | |
CN115397606A (zh) | 无铅且无锑的软钎料合金、焊料球和钎焊接头 | |
CN115397605A (zh) | 无铅且无锑的软钎料合金、焊料球和钎焊接头 | |
JP2003290974A (ja) | 電子回路装置の接合構造及びそれに用いる電子部品 | |
JP2000343273A (ja) | はんだ合金 | |
JP5589642B2 (ja) | 応力緩和性に優れるPbフリーはんだ合金 | |
JP2016059943A (ja) | ボール状Au−Ge−Sn系はんだ合金及び該はんだ合金を用いた電子部品 | |
CN108284286B (zh) | 用于芯片焊接的钎焊合金 | |
KR100898896B1 (ko) | 납땜 방법, 다이 본딩용 땜납 펠릿, 다이 본딩 땜납 펠릿의제조 방법 및 전자 부품 | |
JP2014233737A (ja) | PbフリーAu−Ge−Sn系はんだ合金 | |
JP2015020189A (ja) | Auを主成分とするPbフリーAu−Ge−Sn系はんだ合金 | |
JP2014200794A (ja) | Au−Sn系はんだ合金 | |
JP2017070960A (ja) | 第四元素以降が含有されたAu−Sb−Sn系はんだ合金 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100330 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110322 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110809 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110816 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110913 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110926 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141021 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4844393 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141021 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |