JPS6460630A - Hydroxypolyimide and high temperature positive type photoresist - Google Patents

Hydroxypolyimide and high temperature positive type photoresist

Info

Publication number
JPS6460630A
JPS6460630A JP63182783A JP18278388A JPS6460630A JP S6460630 A JPS6460630 A JP S6460630A JP 63182783 A JP63182783 A JP 63182783A JP 18278388 A JP18278388 A JP 18278388A JP S6460630 A JPS6460630 A JP S6460630A
Authority
JP
Japan
Prior art keywords
aromatic
radical
membered ring
hydroxypolyimide
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63182783A
Other languages
English (en)
Other versions
JP2935994B2 (ja
Inventor
Eichi Miyuraa Buerunaa
Enu Kanna Deinetsushiyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CNA Holdings LLC
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of JPS6460630A publication Critical patent/JPS6460630A/ja
Application granted granted Critical
Publication of JP2935994B2 publication Critical patent/JP2935994B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/1064—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075—Partially aromatic polyimides
    • C08G73/1078—Partially aromatic polyimides wholly aromatic in the diamino moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/016—Diazonium salts or compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
JP63182783A 1987-07-21 1988-07-21 ヒドロキシポリイミドとそれから得られた高温ポジ型フォトレジスト Expired - Lifetime JP2935994B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US076098 1987-07-21
US07/076,098 US4927736A (en) 1987-07-21 1987-07-21 Hydroxy polyimides and high temperature positive photoresists therefrom

Publications (2)

Publication Number Publication Date
JPS6460630A true JPS6460630A (en) 1989-03-07
JP2935994B2 JP2935994B2 (ja) 1999-08-16

Family

ID=22129912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63182783A Expired - Lifetime JP2935994B2 (ja) 1987-07-21 1988-07-21 ヒドロキシポリイミドとそれから得られた高温ポジ型フォトレジスト

Country Status (7)

Country Link
US (1) US4927736A (ja)
EP (1) EP0300326B1 (ja)
JP (1) JP2935994B2 (ja)
KR (1) KR0123891B1 (ja)
AT (1) ATE90704T1 (ja)
DE (1) DE3881771D1 (ja)
HK (1) HK85994A (ja)

Cited By (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0424940A2 (en) 1989-10-27 1991-05-02 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition
US5340684A (en) * 1989-12-07 1994-08-23 Kabushiki Kaisha Toshiba Photosensitive composition and resin-encapsulated semiconductor device
US5342739A (en) * 1991-02-25 1994-08-30 Chisso Corporation Method of preparing a negative pattern utilizing photosensitive polymer composition containing quinonediazide compound and a poly(amido)imide precursor
US5348835A (en) * 1990-09-28 1994-09-20 Kabushiki Kaisha Toshiba Photosensitive resin composition for forming polyimide film pattern comprising an o-quinone diazide photosensitive agent
JPH1095848A (ja) * 1996-06-17 1998-04-14 Hitachi Ltd 感光性ポリイミド前駆体組成物、およびそれを用いたパターン形成方法
EP0852341A1 (en) 1997-01-03 1998-07-08 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
JP2814308B2 (ja) * 1992-09-24 1998-10-22 パーキン―エルマー コーポレーション 粘性の電気泳動ポリマー媒質および方法
US6207356B1 (en) 1996-12-31 2001-03-27 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
US6284440B1 (en) 1996-12-16 2001-09-04 Sumitomo Bakelite Company Limited Alkaline aqueous solution and method for forming pattern of photosensitive resin composition using the same
US6436593B1 (en) 1999-09-28 2002-08-20 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, process for producing pattern and electronic parts
US6541178B2 (en) 1999-12-29 2003-04-01 Samsung Electronics Co., Ltd. Ion-type photoacid generator containing naphthol and photosensitive polyimide composition prepared by using the same
US6600006B2 (en) 2000-12-29 2003-07-29 Samsung Electronics Co., Ltd. Positive-type photosensitive polyimide precursor and composition comprising the same
US6677099B1 (en) 1999-11-30 2004-01-13 Nissan Chemical Industries, Ltd. Positive type photosensitive polyimide resin composition
US6875554B2 (en) 2000-10-04 2005-04-05 Nissan Chemical Industries, Ltd. Positive photosensitive polyimide resin composition
US7157204B2 (en) 2002-11-07 2007-01-02 Samsung Electronics Co., Ltd. Soluble polyimide for photosensitive polyimide precursor and photosensitive polyimide precursor composition comprising the soluble polyimide
US7189488B2 (en) 2001-12-11 2007-03-13 Kaneka Corporation Polyimide precursor, manufacturing method thereof, and resin composition using polyimide precursor
JP2008037915A (ja) * 2006-08-02 2008-02-21 Sony Chemical & Information Device Corp ポリイミド組成物、フレキシブル配線板及びフレキシブル配線板の製造方法
WO2008111470A1 (ja) 2007-03-12 2008-09-18 Hitachi Chemical Dupont Microsystems, Ltd. 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
US7435525B2 (en) 2004-05-07 2008-10-14 Hitachi Chemical Dupont Microsystems Ltd. Positive photosensitive resin composition, method for forming pattern, and electronic part
WO2008126818A1 (ja) * 2007-04-10 2008-10-23 Nippon Kayaku Kabushiki Kaisha 感光性樹脂組成物
WO2009113490A1 (ja) 2008-03-14 2009-09-17 ナガセケムテックス株式会社 感放射線性樹脂組成物
JP2009283711A (ja) * 2008-05-22 2009-12-03 Hitachi Chemical Dupont Microsystems Ltd 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品
US7638254B2 (en) 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
WO2010010842A1 (ja) * 2008-07-22 2010-01-28 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置
CN102985876A (zh) * 2010-07-14 2013-03-20 株式会社Lg化学 正型光敏树脂组合物及包含其的有机发光装置遮屏
US8420291B2 (en) 2007-10-29 2013-04-16 Hitachi Chemical Dupont Microsystems, Ltd. Positive photosensitive resin composition, method for forming pattern, electronic component
JP5216179B2 (ja) * 2000-09-12 2013-06-19 株式会社ピーアイ技術研究所 ネガ型感光性ポリイミド組成物及びそれを用いた画像の形成方法
US8758976B2 (en) 2008-03-07 2014-06-24 Lg Chem Ltd. Positive photosensitive polyimide composition
US8758977B2 (en) 2005-09-22 2014-06-24 Hitachi Chemical Dupont Microsystems, Ltd. Negative-type photosensitive resin composition, pattern forming method and electronic parts
US9274422B2 (en) 2011-06-15 2016-03-01 Hitachi Chemical Dupont Microsystems, Ltd. Photosensitive resin composition, method for forming pattern-cured film using photosensitive resin composition, and electronic component
US9405188B2 (en) 2013-12-19 2016-08-02 Samsung Sdi Co., Ltd. Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and display device
KR20170063625A (ko) 2014-10-02 2017-06-08 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 포지티브형 감광성 수지 조성물, 패턴 경화막의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품
CN107793565A (zh) * 2017-11-03 2018-03-13 杭州超通科技有限公司 一种光敏聚酰亚胺及其制备方法
KR20200057146A (ko) 2018-11-15 2020-05-26 나노크리스탈주식회사 폴리벤즈옥사졸 전구체, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 경화막 패턴의 형성방법.

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US5206091A (en) * 1988-06-28 1993-04-27 Amoco Corporation Low dielectric constant, low moisture uptake polyimides and copolyimides for interlevel dielectrics and substrate coatings
US5268193A (en) * 1988-06-28 1993-12-07 Amoco Corporation Low dielectric constant, low moisture uptake polyimides and copolyimides for interlevel dielectrics and substrate coatings
US5037673A (en) * 1988-10-11 1991-08-06 Ethyl Corporation Method of spin coating a solution of partially fluorinated polyamic acid polymer and cycloaliphatic ketone solvent
US4997869A (en) * 1988-10-11 1991-03-05 Ethyl Corporation Production of electronic coatings by spin coating a partially fluorinated polyimide composition
US4996254A (en) * 1988-10-11 1991-02-26 Ethyl Corporation Production of electronic coatings by spin coating a partially fluorinated polyamic acid composition
US5138424A (en) * 1988-11-07 1992-08-11 Brewer Science, Inc. Positive working polyamic acid/imide photoresist compositions and their use as dielectrics
US5024922A (en) * 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
EP0378156A3 (en) * 1989-01-09 1992-02-26 Nitto Denko Corporation Positively photosensitive polyimide composition
EP0388482B1 (de) * 1989-03-20 1994-07-06 Siemens Aktiengesellschaft Lichtempfindliches Gemisch
US5057399A (en) * 1989-03-31 1991-10-15 Tony Flaim Method for making polyimide microlithographic compositions soluble in alkaline media
AU5433890A (en) * 1989-03-30 1990-11-05 Brewer Science, Inc. Base-soluble polyimide release layers for use in microlithographic processing
EP0391200B1 (de) * 1989-04-06 1995-10-11 Siemens Aktiengesellschaft Herstellung hochwärmebeständiger Reliefstrukturen
US5288588A (en) * 1989-10-27 1994-02-22 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
EP0449117A3 (en) * 1990-03-23 1992-05-06 Matsushita Electric Industrial Co., Ltd. Organic polymer and preparation and use thereof
DE59010552D1 (de) * 1990-03-29 1996-12-05 Siemens Ag Hochwärmebeständige Negativresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
JPH0415226A (ja) * 1990-05-10 1992-01-20 Chisso Corp ヒドロキシフェニル基を有する感光性耐熱重合体
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TW502135B (en) 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
KR19980079775A (ko) * 1997-03-03 1998-11-25 이사오 우치가사키 내열성 감광성 중합체조성물, 패턴의 제조법 및 반도체 장치
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CN1250611C (zh) 2001-08-22 2006-04-12 学校法人汉阳学院 交联磺化聚酰亚胺膜
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CN102985876A (zh) * 2010-07-14 2013-03-20 株式会社Lg化学 正型光敏树脂组合物及包含其的有机发光装置遮屏
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KR20170063625A (ko) 2014-10-02 2017-06-08 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 포지티브형 감광성 수지 조성물, 패턴 경화막의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품
CN107793565A (zh) * 2017-11-03 2018-03-13 杭州超通科技有限公司 一种光敏聚酰亚胺及其制备方法
KR20200057146A (ko) 2018-11-15 2020-05-26 나노크리스탈주식회사 폴리벤즈옥사졸 전구체, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 경화막 패턴의 형성방법.

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DE3881771D1 (de) 1993-07-22
EP0300326B1 (de) 1993-06-16
EP0300326A1 (de) 1989-01-25
KR0123891B1 (ko) 1997-11-24
JP2935994B2 (ja) 1999-08-16
KR890002281A (ko) 1989-04-10
US4927736A (en) 1990-05-22
ATE90704T1 (de) 1993-07-15
HK85994A (en) 1994-08-26

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