JPS6422068U - - Google Patents
Info
- Publication number
- JPS6422068U JPS6422068U JP1987127526U JP12752687U JPS6422068U JP S6422068 U JPS6422068 U JP S6422068U JP 1987127526 U JP1987127526 U JP 1987127526U JP 12752687 U JP12752687 U JP 12752687U JP S6422068 U JPS6422068 U JP S6422068U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor
- groove
- laser diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 25
- 239000011247 coating layer Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
Description
第1図は、公知の2重へテロ構造−プレーナ形
ストライプレーザの断面略図、第2図は狭いが横
多モードレーザの光/電流−特性曲線を示すグラ
フ図、第3図〜第7図は本考案の半導体レーザを
製造工程順に示す断面略図、第8図は本考案の半
導体レーザで測定された光出力−電流性曲線のグ
ラフ図、第9図は本考案の半導体レーザの光強度
とレーザ活性帯域の関係を示すグラフ図である。 1……サブストレート、2,4,5,6……半
導体層、3……レーザ活性層、7……フオトレジ
ストマスク、8……拡散前面、9,10……電極
、11……ヒートシンク、12……インジウム層
、13,14……PN接合。
ストライプレーザの断面略図、第2図は狭いが横
多モードレーザの光/電流−特性曲線を示すグラ
フ図、第3図〜第7図は本考案の半導体レーザを
製造工程順に示す断面略図、第8図は本考案の半
導体レーザで測定された光出力−電流性曲線のグ
ラフ図、第9図は本考案の半導体レーザの光強度
とレーザ活性帯域の関係を示すグラフ図である。 1……サブストレート、2,4,5,6……半
導体層、3……レーザ活性層、7……フオトレジ
ストマスク、8……拡散前面、9,10……電極
、11……ヒートシンク、12……インジウム層
、13,14……PN接合。
Claims (1)
- 【実用新案登録請求の範囲】 1 互いに逆の導電型を有する層の間にレーザ活
性層が設けられている、サブストレート上に形成
されている層列を有するヘテロ構造の半導体レー
ザダイオードであつて、前記層列の、サブストレ
ートとは反対の方の側において、前記活性層にサ
ブストレートの側において接している半導体層の
導電型を有する単結晶の被覆層が形成されており
、該被覆層において、前記層列の外側から拡散さ
れた、前記被覆層とは反対の導電型を有する半導
体領域が設けられており、該領域はストライプ形
状の、レーザビームの射出面に対して垂直に延在
する表面帯域において前記被覆層と隣接する半導
体層との間の境界面を貫通しており、かつ前記レ
ーザ活性帯域にまで達しており、その結果ダイオ
ードの順方向に流れる電流が、レーザ活性帯域の
狭いストライプ状の領域に制限されるようになつ
ている形式のものにおて、被覆層6は、レーザビ
ームの射出面に対して垂直方向に延在する溝形状
の、実質的にV字形に形成された凹入部を有して
おりかつドーピング材料をこのように構成された
、被覆層6の表面を介して拡散することによつて
、このようにして構成された表面に相応する拡散
前面を有する拡散された半導体領域が形成されて
おり、かつサブストレートの側において被覆層6
に接して、該被覆層と同じ導電型だがバンド間隔
が比較的大きい付加層5が設けられておりかつ拡
散前面8が前記付加層と該層にサブストレートの
側において隣接する半導体層4との間のpn接合
に達してなる半導体レーザダイオード。 2 単結晶の被覆層6の表面における溝状の凹入
部が、少なくとも溝の幅のオーダにある深さを有
する実用新案登録請求の範囲第1項記載の半導体
レーザダイオード。 3 溝の幅が<3μmである実用新案登録請求の
範囲第1項記載の半導体レーザダイオード。 4 溝状の凹入部の溝の底部とレーザ活性帯域3
との間隔が≧2μmである実用新案登録請求の範
囲第1項記載の半導体レーザダイオード。 5 1:GaASサブストレート、n形 2:Ga1−XAlXAs層、n形 3:Ga1−YAlYAs層、n形またはP
形、レーザ活性帯域 4:Ga1−X′AlX′As層、P形 5:Ga1−X″AlX″As層、n形 6:GaAs層、n形 から成る層列1〜6が設けられており、溝状の
凹入部が層6の表面に形成されており、その際X
,X′,X″>Yである実用新案登録請求の範囲
第1項記載の半導体レーザダイオード。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2822146A DE2822146C2 (de) | 1978-05-20 | 1978-05-20 | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422068U true JPS6422068U (ja) | 1989-02-03 |
Family
ID=6039879
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6058679A Pending JPS54152988A (en) | 1978-05-20 | 1979-05-18 | Semiconductor laser and method of fabricating same |
JP1987127526U Pending JPS6422068U (ja) | 1978-05-20 | 1987-08-24 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6058679A Pending JPS54152988A (en) | 1978-05-20 | 1979-05-18 | Semiconductor laser and method of fabricating same |
Country Status (7)
Country | Link |
---|---|
US (1) | US4278949A (ja) |
JP (2) | JPS54152988A (ja) |
CA (1) | CA1128634A (ja) |
DE (1) | DE2822146C2 (ja) |
FR (1) | FR2426348B1 (ja) |
GB (1) | GB2021307B (ja) |
IT (1) | IT1112931B (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3102875C2 (de) * | 1978-05-20 | 1984-02-16 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode |
DE2933035A1 (de) * | 1979-08-16 | 1981-03-26 | Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt | Halbleiterlaser |
DE3002469A1 (de) * | 1980-01-24 | 1981-07-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Optische faserleitung zwischen einem halbleiterlaser und einem ersten faserstecker |
JPS56110289A (en) * | 1980-02-05 | 1981-09-01 | Mitsubishi Electric Corp | Manufacture of semiconductor laser element |
DE3005645A1 (de) * | 1980-02-15 | 1981-08-20 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur modulation eines halbleiterlasers |
DE3012361A1 (de) * | 1980-03-29 | 1981-10-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterlaser |
JPS5710992A (en) * | 1980-06-24 | 1982-01-20 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture therefor |
US4408331A (en) * | 1981-03-25 | 1983-10-04 | Bell Telephone Laboratories, Incorporated | V-Groove semiconductor light emitting devices |
GB2111743B (en) * | 1981-08-25 | 1985-11-27 | Handotai Kenkyu Shinkokai | Semiconductor laser |
NL8104068A (nl) * | 1981-09-02 | 1983-04-05 | Philips Nv | Halfgeleiderlaser. |
NL8201409A (nl) * | 1982-04-02 | 1983-11-01 | Philips Nv | Halfgeleiderlaser en werkwijze ter vervaardiging ervan. |
DE3214700A1 (de) * | 1982-04-21 | 1983-10-27 | Licentia Gmbh | Optisches nachrichtenuebertragungssystem |
JPS5967677A (ja) * | 1982-07-01 | 1984-04-17 | Semiconductor Res Found | 光集積回路 |
DE3231732A1 (de) * | 1982-08-26 | 1984-03-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrischer kontakt |
NL8301331A (nl) * | 1983-04-15 | 1984-11-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan. |
DE3343051A1 (de) * | 1983-11-29 | 1985-06-05 | Licentia Gmbh | Verfahren und anordnung zum erzeugen elektrischer steuerimpulse |
DE3406361A1 (de) * | 1984-02-22 | 1985-08-29 | Telefunken electronic GmbH, 7100 Heilbronn | Doppel-heterostruktur-laser und verfahren zu seiner herstellung |
US4605942A (en) * | 1984-10-09 | 1986-08-12 | At&T Bell Laboratories | Multiple wavelength light emitting devices |
DE3604295A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
DE3604294A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdioden |
US5770475A (en) * | 1996-09-23 | 1998-06-23 | Electronics And Telecommunications Research Institute | Crystal growth method for compound semiconductor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5068288A (ja) * | 1973-10-17 | 1975-06-07 | ||
JPS50150392A (ja) * | 1974-05-21 | 1975-12-02 | ||
JPS52106283A (en) * | 1976-03-03 | 1977-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser unit |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
US3946334A (en) * | 1973-11-14 | 1976-03-23 | Nippon Electric Company, Limited | Injection semiconductor laser device |
US3938172A (en) * | 1974-05-22 | 1976-02-10 | Rca Corporation | Semiconductor injection laser |
GB1494518A (en) * | 1975-02-04 | 1977-12-07 | Standard Telephones Cables Ltd | Heterostructure lasers |
JPS52109884A (en) * | 1976-03-11 | 1977-09-14 | Nec Corp | Stripe type hetero junction semoonductor laser |
-
1978
- 1978-05-20 DE DE2822146A patent/DE2822146C2/de not_active Expired
-
1979
- 1979-05-10 GB GB7916322A patent/GB2021307B/en not_active Expired
- 1979-05-18 IT IT22832/79A patent/IT1112931B/it active
- 1979-05-18 FR FR7912806A patent/FR2426348B1/fr not_active Expired
- 1979-05-18 JP JP6058679A patent/JPS54152988A/ja active Pending
- 1979-05-21 US US06/041,171 patent/US4278949A/en not_active Expired - Lifetime
- 1979-05-22 CA CA327,990A patent/CA1128634A/en not_active Expired
-
1987
- 1987-08-24 JP JP1987127526U patent/JPS6422068U/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5068288A (ja) * | 1973-10-17 | 1975-06-07 | ||
JPS50150392A (ja) * | 1974-05-21 | 1975-12-02 | ||
JPS52106283A (en) * | 1976-03-03 | 1977-09-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser unit |
Also Published As
Publication number | Publication date |
---|---|
FR2426348B1 (fr) | 1986-03-28 |
FR2426348A1 (fr) | 1979-12-14 |
GB2021307B (en) | 1982-07-28 |
US4278949A (en) | 1981-07-14 |
DE2822146C2 (de) | 1982-11-25 |
DE2822146A1 (de) | 1979-11-22 |
IT1112931B (it) | 1986-01-20 |
IT7922832A0 (it) | 1979-05-18 |
CA1128634A (en) | 1982-07-27 |
GB2021307A (en) | 1979-11-28 |
JPS54152988A (en) | 1979-12-01 |
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