FR2426348A1 - Laser a semi-conducteurs et procede de production d'un tel laser - Google Patents

Laser a semi-conducteurs et procede de production d'un tel laser

Info

Publication number
FR2426348A1
FR2426348A1 FR7912806A FR7912806A FR2426348A1 FR 2426348 A1 FR2426348 A1 FR 2426348A1 FR 7912806 A FR7912806 A FR 7912806A FR 7912806 A FR7912806 A FR 7912806A FR 2426348 A1 FR2426348 A1 FR 2426348A1
Authority
FR
France
Prior art keywords
laser
production
semiconductor
produce
narrow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7912806A
Other languages
English (en)
Other versions
FR2426348B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of FR2426348A1 publication Critical patent/FR2426348A1/fr
Application granted granted Critical
Publication of FR2426348B1 publication Critical patent/FR2426348B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Laser à semi-conducteur comportant une couche dont la surface présente un fossé servant à la production d'un front de diffusion correspondant à la surface structurée. Le front de diffusion est déformé au voisinage du fossé de façon à produire une étroite région semi-conductrice, qui s'étend jusqu'à la zone à effet laser. La région semi-conductrice limite le courant d'excitation à une étroite région de la zone à effet laser.
FR7912806A 1978-05-20 1979-05-18 Laser a semi-conducteurs et procede de production d'un tel laser Expired FR2426348B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2822146A DE2822146C2 (de) 1978-05-20 1978-05-20 Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode

Publications (2)

Publication Number Publication Date
FR2426348A1 true FR2426348A1 (fr) 1979-12-14
FR2426348B1 FR2426348B1 (fr) 1986-03-28

Family

ID=6039879

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7912806A Expired FR2426348B1 (fr) 1978-05-20 1979-05-18 Laser a semi-conducteurs et procede de production d'un tel laser

Country Status (7)

Country Link
US (1) US4278949A (fr)
JP (2) JPS54152988A (fr)
CA (1) CA1128634A (fr)
DE (1) DE2822146C2 (fr)
FR (1) FR2426348B1 (fr)
GB (1) GB2021307B (fr)
IT (1) IT1112931B (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3102875C2 (de) * 1978-05-20 1984-02-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode
DE2933035A1 (de) * 1979-08-16 1981-03-26 Licentia Patent-Verwaltungs-Gmbh, 60596 Frankfurt Halbleiterlaser
DE3002469A1 (de) * 1980-01-24 1981-07-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optische faserleitung zwischen einem halbleiterlaser und einem ersten faserstecker
JPS56110289A (en) * 1980-02-05 1981-09-01 Mitsubishi Electric Corp Manufacture of semiconductor laser element
DE3005645A1 (de) * 1980-02-15 1981-08-20 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur modulation eines halbleiterlasers
DE3012361A1 (de) * 1980-03-29 1981-10-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
US4408331A (en) * 1981-03-25 1983-10-04 Bell Telephone Laboratories, Incorporated V-Groove semiconductor light emitting devices
GB2111743B (en) * 1981-08-25 1985-11-27 Handotai Kenkyu Shinkokai Semiconductor laser
NL8104068A (nl) * 1981-09-02 1983-04-05 Philips Nv Halfgeleiderlaser.
NL8201409A (nl) * 1982-04-02 1983-11-01 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging ervan.
DE3214700A1 (de) * 1982-04-21 1983-10-27 Licentia Gmbh Optisches nachrichtenuebertragungssystem
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
DE3231732A1 (de) * 1982-08-26 1984-03-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrischer kontakt
NL8301331A (nl) * 1983-04-15 1984-11-01 Philips Nv Halfgeleiderinrichting voor het opwekken of versterken van electromagnetische straling en werkwijze ter vervaardiging daarvan.
DE3343051A1 (de) * 1983-11-29 1985-06-05 Licentia Gmbh Verfahren und anordnung zum erzeugen elektrischer steuerimpulse
DE3406361A1 (de) * 1984-02-22 1985-08-29 Telefunken electronic GmbH, 7100 Heilbronn Doppel-heterostruktur-laser und verfahren zu seiner herstellung
US4605942A (en) * 1984-10-09 1986-08-12 At&T Bell Laboratories Multiple wavelength light emitting devices
DE3604295A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdiode
DE3604294A1 (de) * 1986-02-12 1987-08-13 Telefunken Electronic Gmbh Heterostruktur-halbleiterlaserdioden
US5770475A (en) * 1996-09-23 1998-06-23 Electronics And Telecommunications Research Institute Crystal growth method for compound semiconductor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
FR2300440A2 (fr) * 1975-02-04 1976-09-03 Int Standard Electric Corp Perfectionnements aux lasers a l'arseniure de gallium a injection
DE2710813A1 (de) * 1976-03-11 1977-09-22 Nippon Electric Co Heterostruktur-halbleiterlaser

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
JPS5622395B2 (fr) * 1973-10-17 1981-05-25
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
JPS5810874B2 (ja) * 1974-05-21 1983-02-28 三菱電機株式会社 ハンドウタイハツコウソシ
JPS52106283A (en) * 1976-03-03 1977-09-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
FR2300440A2 (fr) * 1975-02-04 1976-09-03 Int Standard Electric Corp Perfectionnements aux lasers a l'arseniure de gallium a injection
DE2710813A1 (de) * 1976-03-11 1977-09-22 Nippon Electric Co Heterostruktur-halbleiterlaser

Also Published As

Publication number Publication date
DE2822146C2 (de) 1982-11-25
GB2021307A (en) 1979-11-28
IT7922832A0 (it) 1979-05-18
JPS6422068U (fr) 1989-02-03
GB2021307B (en) 1982-07-28
IT1112931B (it) 1986-01-20
DE2822146A1 (de) 1979-11-22
US4278949A (en) 1981-07-14
JPS54152988A (en) 1979-12-01
FR2426348B1 (fr) 1986-03-28
CA1128634A (fr) 1982-07-27

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Legal Events

Date Code Title Description
ST Notification of lapse