JPS6357947B2 - - Google Patents

Info

Publication number
JPS6357947B2
JPS6357947B2 JP57030007A JP3000782A JPS6357947B2 JP S6357947 B2 JPS6357947 B2 JP S6357947B2 JP 57030007 A JP57030007 A JP 57030007A JP 3000782 A JP3000782 A JP 3000782A JP S6357947 B2 JPS6357947 B2 JP S6357947B2
Authority
JP
Japan
Prior art keywords
layer
control electrode
electron
semiconductor
mobility transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57030007A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58147169A (ja
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030007A priority Critical patent/JPS58147169A/ja
Publication of JPS58147169A publication Critical patent/JPS58147169A/ja
Publication of JPS6357947B2 publication Critical patent/JPS6357947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs

Landscapes

  • Bipolar Transistors (AREA)
  • Weting (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57030007A 1982-02-26 1982-02-26 高電子移動度トランジスタの製造方法 Granted JPS58147169A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030007A JPS58147169A (ja) 1982-02-26 1982-02-26 高電子移動度トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030007A JPS58147169A (ja) 1982-02-26 1982-02-26 高電子移動度トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58147169A JPS58147169A (ja) 1983-09-01
JPS6357947B2 true JPS6357947B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=12291821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030007A Granted JPS58147169A (ja) 1982-02-26 1982-02-26 高電子移動度トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58147169A (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624208B2 (ja) * 1982-07-29 1994-03-30 日本電気株式会社 半導体装置
JPS5932174A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
JP2655594B2 (ja) * 1984-01-10 1997-09-24 日本電気株式会社 集積型半導体装置
JPS60210879A (ja) * 1984-04-03 1985-10-23 Nec Corp 電界効果トランジスタ
JP2604349B2 (ja) * 1984-12-12 1997-04-30 日本電気株式会社 半導体装置
JPS61176161A (ja) * 1985-01-31 1986-08-07 Nec Corp ヘテロゲ−ト電界効果トランジスタ
JPH0714056B2 (ja) * 1985-04-05 1995-02-15 日本電気株式会社 半導体装置
JPH088350B2 (ja) * 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
JPH0216102Y2 (enrdf_load_stackoverflow) * 1985-05-17 1990-05-01
JPH0758760B2 (ja) * 1985-06-05 1995-06-21 日本電気株式会社 相補型半導体装置
JPS61280674A (ja) * 1985-06-06 1986-12-11 Nec Corp 半導体装置
US4689869A (en) * 1986-04-07 1987-09-01 International Business Machines Corporation Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length
US4942437A (en) * 1986-04-22 1990-07-17 International Business Machines Corporation Electron tuned quantum well device
JPH07120630B2 (ja) * 1986-09-20 1995-12-20 富士通株式会社 半導体装置の製造方法
US4962409A (en) * 1987-01-20 1990-10-09 International Business Machines Corporation Staggered bandgap gate field effect transistor
JP3125574B2 (ja) * 1994-03-29 2001-01-22 日本電気株式会社 化合物半導体装置の製造方法
JP4507285B2 (ja) * 1998-09-18 2010-07-21 ソニー株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS58147169A (ja) 1983-09-01

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