JPS6356710B2 - - Google Patents

Info

Publication number
JPS6356710B2
JPS6356710B2 JP56149989A JP14998981A JPS6356710B2 JP S6356710 B2 JPS6356710 B2 JP S6356710B2 JP 56149989 A JP56149989 A JP 56149989A JP 14998981 A JP14998981 A JP 14998981A JP S6356710 B2 JPS6356710 B2 JP S6356710B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor
electron transit
control
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56149989A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5851574A (ja
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56149989A priority Critical patent/JPS5851574A/ja
Publication of JPS5851574A publication Critical patent/JPS5851574A/ja
Publication of JPS6356710B2 publication Critical patent/JPS6356710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56149989A 1981-09-22 1981-09-22 半導体装置 Granted JPS5851574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149989A JPS5851574A (ja) 1981-09-22 1981-09-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149989A JPS5851574A (ja) 1981-09-22 1981-09-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS5851574A JPS5851574A (ja) 1983-03-26
JPS6356710B2 true JPS6356710B2 (enrdf_load_stackoverflow) 1988-11-09

Family

ID=15487026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149989A Granted JPS5851574A (ja) 1981-09-22 1981-09-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS5851574A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119671A (ja) * 1982-01-09 1983-07-16 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS5955073A (ja) * 1982-09-24 1984-03-29 Fujitsu Ltd 半導体装置
US4583105A (en) * 1982-12-30 1986-04-15 International Business Machines Corporation Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
JPS59222966A (ja) * 1983-06-02 1984-12-14 Sony Corp 半導体装置
JPS605570A (ja) * 1983-06-09 1985-01-12 Fujitsu Ltd 半導体装置の製造方法
JPS6012774A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 半導体素子の製造方法
JPS60263475A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置
JPS613465A (ja) * 1984-06-18 1986-01-09 Fujitsu Ltd 半導体装置及びその製造方法
JPH0697668B2 (ja) * 1984-08-17 1994-11-30 ソニー株式会社 半導体装置
JPS61176161A (ja) * 1985-01-31 1986-08-07 Nec Corp ヘテロゲ−ト電界効果トランジスタ

Also Published As

Publication number Publication date
JPS5851574A (ja) 1983-03-26

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