JPH0312770B2 - - Google Patents
Info
- Publication number
- JPH0312770B2 JPH0312770B2 JP61254181A JP25418186A JPH0312770B2 JP H0312770 B2 JPH0312770 B2 JP H0312770B2 JP 61254181 A JP61254181 A JP 61254181A JP 25418186 A JP25418186 A JP 25418186A JP H0312770 B2 JPH0312770 B2 JP H0312770B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alinas
- type
- impurities
- gainas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
Landscapes
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61254181A JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
EP87115444A EP0264932A1 (en) | 1986-10-24 | 1987-10-21 | Field effect transistor |
KR1019870011772A KR900008154B1 (ko) | 1986-10-24 | 1987-10-23 | 전계효과 트랜지스터 |
CA000550121A CA1261977A (en) | 1986-10-24 | 1987-10-23 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61254181A JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63107173A JPS63107173A (ja) | 1988-05-12 |
JPH0312770B2 true JPH0312770B2 (enrdf_load_stackoverflow) | 1991-02-21 |
Family
ID=17261356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61254181A Granted JPS63107173A (ja) | 1986-10-24 | 1986-10-24 | 電界効果トランジスタ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63107173A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230149A (ja) * | 1988-07-20 | 1990-01-31 | Sanyo Electric Co Ltd | ヘテロ接合電界効果トランジスタ |
JP2529109Y2 (ja) * | 1989-12-13 | 1997-03-19 | 株式会社シマノ | 両軸受リール |
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1986
- 1986-10-24 JP JP61254181A patent/JPS63107173A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63107173A (ja) | 1988-05-12 |