JPS5851574A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5851574A
JPS5851574A JP56149989A JP14998981A JPS5851574A JP S5851574 A JPS5851574 A JP S5851574A JP 56149989 A JP56149989 A JP 56149989A JP 14998981 A JP14998981 A JP 14998981A JP S5851574 A JPS5851574 A JP S5851574A
Authority
JP
Japan
Prior art keywords
layer
electron
semiconductor
control
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149989A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6356710B2 (enrdf_load_stackoverflow
Inventor
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56149989A priority Critical patent/JPS5851574A/ja
Publication of JPS5851574A publication Critical patent/JPS5851574A/ja
Publication of JPS6356710B2 publication Critical patent/JPS6356710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56149989A 1981-09-22 1981-09-22 半導体装置 Granted JPS5851574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56149989A JPS5851574A (ja) 1981-09-22 1981-09-22 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149989A JPS5851574A (ja) 1981-09-22 1981-09-22 半導体装置

Publications (2)

Publication Number Publication Date
JPS5851574A true JPS5851574A (ja) 1983-03-26
JPS6356710B2 JPS6356710B2 (enrdf_load_stackoverflow) 1988-11-09

Family

ID=15487026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149989A Granted JPS5851574A (ja) 1981-09-22 1981-09-22 半導体装置

Country Status (1)

Country Link
JP (1) JPS5851574A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119671A (ja) * 1982-01-09 1983-07-16 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS59124171A (ja) * 1982-12-30 1984-07-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ２重ヘテロ接合ｆｅｔ
JPS59222966A (ja) * 1983-06-02 1984-12-14 Sony Corp 半導体装置
JPS605570A (ja) * 1983-06-09 1985-01-12 Fujitsu Ltd 半導体装置の製造方法
JPS6012774A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 半導体素子の製造方法
JPS60263475A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置
JPS6149477A (ja) * 1984-08-17 1986-03-11 Sony Corp 半導体装置
JPS61176161A (ja) * 1985-01-31 1986-08-07 Nec Corp ヘテロゲ−ト電界効果トランジスタ
US4732870A (en) * 1984-06-18 1988-03-22 Fujitsu Limited Method of making complementary field effect transistors
US4771324A (en) * 1982-09-24 1988-09-13 Fujitsu Limited Heterojunction field effect device having an implanted region within a device channel

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119671A (ja) * 1982-01-09 1983-07-16 Agency Of Ind Science & Technol 電界効果トランジスタ
US4771324A (en) * 1982-09-24 1988-09-13 Fujitsu Limited Heterojunction field effect device having an implanted region within a device channel
JPS59124171A (ja) * 1982-12-30 1984-07-18 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ２重ヘテロ接合ｆｅｔ
JPS59222966A (ja) * 1983-06-02 1984-12-14 Sony Corp 半導体装置
JPS605570A (ja) * 1983-06-09 1985-01-12 Fujitsu Ltd 半導体装置の製造方法
JPS6012774A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 半導体素子の製造方法
JPS60263475A (ja) * 1984-06-12 1985-12-26 Sony Corp 半導体装置
US4732870A (en) * 1984-06-18 1988-03-22 Fujitsu Limited Method of making complementary field effect transistors
JPS6149477A (ja) * 1984-08-17 1986-03-11 Sony Corp 半導体装置
JPS61176161A (ja) * 1985-01-31 1986-08-07 Nec Corp ヘテロゲ−ト電界効果トランジスタ

Also Published As

Publication number Publication date
JPS6356710B2 (enrdf_load_stackoverflow) 1988-11-09

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