JPS6246073B2 - - Google Patents

Info

Publication number
JPS6246073B2
JPS6246073B2 JP57209031A JP20903182A JPS6246073B2 JP S6246073 B2 JPS6246073 B2 JP S6246073B2 JP 57209031 A JP57209031 A JP 57209031A JP 20903182 A JP20903182 A JP 20903182A JP S6246073 B2 JPS6246073 B2 JP S6246073B2
Authority
JP
Japan
Prior art keywords
etching
film
gate
dry etching
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57209031A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5999776A (ja
Inventor
Toshuki Terada
Takamaro Mizoguchi
Nobuyuki Toyoda
Akimichi Hojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57209031A priority Critical patent/JPS5999776A/ja
Publication of JPS5999776A publication Critical patent/JPS5999776A/ja
Publication of JPS6246073B2 publication Critical patent/JPS6246073B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP57209031A 1982-11-29 1982-11-29 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 Granted JPS5999776A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57209031A JPS5999776A (ja) 1982-11-29 1982-11-29 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57209031A JPS5999776A (ja) 1982-11-29 1982-11-29 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5999776A JPS5999776A (ja) 1984-06-08
JPS6246073B2 true JPS6246073B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-09-30

Family

ID=16566107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57209031A Granted JPS5999776A (ja) 1982-11-29 1982-11-29 シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5999776A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022071U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-06-17 1990-01-09

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6081872A (ja) * 1983-10-11 1985-05-09 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS6143481A (ja) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd シヨツトキゲ−ト電界効果トランジスタの製造方法
JPH0812868B2 (ja) * 1984-08-27 1996-02-07 沖電気工業株式会社 化合物半導体素子の製造方法
JPS6181672A (ja) * 1984-09-28 1986-04-25 Nec Corp 半導体装置の製造方法
JPS6196735A (ja) * 1984-10-17 1986-05-15 Toshiba Corp 導体パタ−ン形成方法
JPS61108175A (ja) * 1984-11-01 1986-05-26 Toshiba Corp 半導体装置及び製造方法
EP0208795A1 (en) * 1985-07-12 1987-01-21 International Business Machines Corporation Method of fabricating a self-aligned metal-semiconductor FET
JPS62156878A (ja) * 1985-12-28 1987-07-11 Nec Corp 半導体装置
US4689869A (en) * 1986-04-07 1987-09-01 International Business Machines Corporation Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length
JPS62243359A (ja) * 1986-04-15 1987-10-23 Matsushita Electric Ind Co Ltd 化合物半導体装置
JP2557432B2 (ja) * 1987-12-25 1996-11-27 富士通株式会社 電界効果トランジスタ
JP5098166B2 (ja) * 2005-12-12 2012-12-12 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH022071U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-06-17 1990-01-09

Also Published As

Publication number Publication date
JPS5999776A (ja) 1984-06-08

Similar Documents

Publication Publication Date Title
US4711858A (en) Method of fabricating a self-aligned metal-semiconductor FET having an insulator spacer
EP0128751B1 (en) Manufacturing method of schottky gate fet
JPS59114871A (ja) シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
JPS6246073B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6351550B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4587709A (en) Method of making short channel IGFET
US5580803A (en) Production method for ion-implanted MESFET having self-aligned lightly doped drain structure and T-type gate
JPH065682B2 (ja) 半導体装置の製造方法
JPH02130852A (ja) 半導体装置
JPS6258154B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6323669B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH01251669A (ja) 電界効果トランジスタの製造方法
JPS5852351B2 (ja) 半導体装置の製造方法
JPH0574814A (ja) シヨツトキ・ゲート形電界効果トランジスタの製造方法
JPS61154177A (ja) 半導体装置の製造方法
JPH0645293A (ja) ゲート電極の形成方法
JPS59126676A (ja) 電界効果型トランジスタ
JPH0213929B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2803112B2 (ja) 半導体装置の製造方法
JP2550495B2 (ja) 半導体装置の製造方法
JPH0714068B2 (ja) 半導体装置の製造方法
JPS6323366A (ja) 電界効果トランジスタの製造方法
JPS60198869A (ja) 半導体装置の製造方法
JPH03203246A (ja) 半導体装置の製造方法
JPH04212428A (ja) 半導体装置の製造方法