JPS6237479B2 - - Google Patents

Info

Publication number
JPS6237479B2
JPS6237479B2 JP1802783A JP1802783A JPS6237479B2 JP S6237479 B2 JPS6237479 B2 JP S6237479B2 JP 1802783 A JP1802783 A JP 1802783A JP 1802783 A JP1802783 A JP 1802783A JP S6237479 B2 JPS6237479 B2 JP S6237479B2
Authority
JP
Japan
Prior art keywords
memory cell
cell block
redundant
circuit
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1802783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59144098A (ja
Inventor
Masanobu Yoshida
Kyoyoshi Itano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58018027A priority Critical patent/JPS59144098A/ja
Priority to CA000446571A priority patent/CA1214553A/en
Priority to IE285/84A priority patent/IE56815B1/en
Priority to EP84300802A priority patent/EP0116464B1/en
Priority to DE8484300802T priority patent/DE3484514D1/de
Priority to US06/578,000 priority patent/US4604730A/en
Priority to KR1019840000580A priority patent/KR890005156B1/ko
Publication of JPS59144098A publication Critical patent/JPS59144098A/ja
Publication of JPS6237479B2 publication Critical patent/JPS6237479B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
JP58018027A 1983-02-08 1983-02-08 半導体記憶装置 Granted JPS59144098A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP58018027A JPS59144098A (ja) 1983-02-08 1983-02-08 半導体記憶装置
CA000446571A CA1214553A (en) 1983-02-08 1984-02-01 Semiconductor memory device
IE285/84A IE56815B1 (en) 1983-02-08 1984-02-07 A semiconductor memory device
EP84300802A EP0116464B1 (en) 1983-02-08 1984-02-08 A semiconductor memory device
DE8484300802T DE3484514D1 (de) 1983-02-08 1984-02-08 Halbleiterspeichergeraet.
US06/578,000 US4604730A (en) 1983-02-08 1984-02-08 Semiconductor memory device
KR1019840000580A KR890005156B1 (ko) 1983-02-08 1984-02-08 반도체 기억장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58018027A JPS59144098A (ja) 1983-02-08 1983-02-08 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS59144098A JPS59144098A (ja) 1984-08-17
JPS6237479B2 true JPS6237479B2 (en, 2012) 1987-08-12

Family

ID=11960179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58018027A Granted JPS59144098A (ja) 1983-02-08 1983-02-08 半導体記憶装置

Country Status (7)

Country Link
US (1) US4604730A (en, 2012)
EP (1) EP0116464B1 (en, 2012)
JP (1) JPS59144098A (en, 2012)
KR (1) KR890005156B1 (en, 2012)
CA (1) CA1214553A (en, 2012)
DE (1) DE3484514D1 (en, 2012)
IE (1) IE56815B1 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167760U (en, 2012) * 1988-05-16 1989-11-27

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6148200A (ja) * 1984-08-14 1986-03-08 Fujitsu Ltd 半導体記憶装置
JPS6355799A (ja) * 1986-08-26 1988-03-10 Mitsubishi Electric Corp 半導体記憶装置
JP2590897B2 (ja) * 1987-07-20 1997-03-12 日本電気株式会社 半導体メモリ
US4807191A (en) * 1988-01-04 1989-02-21 Motorola, Inc. Redundancy for a block-architecture memory
US5134584A (en) * 1988-07-22 1992-07-28 Vtc Incorporated Reconfigurable memory
JPH0289299A (ja) * 1988-09-27 1990-03-29 Nec Corp 半導体記憶装置
US7190617B1 (en) 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
EP1031992B1 (en) 1989-04-13 2006-06-21 SanDisk Corporation Flash EEPROM system
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
JP2837433B2 (ja) * 1989-06-05 1998-12-16 三菱電機株式会社 半導体記憶装置における不良ビット救済回路
JPH03116498A (ja) * 1989-09-28 1991-05-17 Nec Ic Microcomput Syst Ltd 記憶装置
GB8926004D0 (en) * 1989-11-17 1990-01-10 Inmos Ltd Repairable memory circuit
US5126973A (en) * 1990-02-14 1992-06-30 Texas Instruments Incorporated Redundancy scheme for eliminating defects in a memory device
JPH03241598A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd シグネチャー回路
US5274593A (en) * 1990-09-28 1993-12-28 Intergraph Corporation High speed redundant rows and columns for semiconductor memories
JPH06111596A (ja) * 1990-10-09 1994-04-22 Texas Instr Inc <Ti> メモリ
JP3001252B2 (ja) * 1990-11-16 2000-01-24 株式会社日立製作所 半導体メモリ
JPH06203595A (ja) * 1991-08-30 1994-07-22 Texas Instr Inc <Ti> ユニバーサル・モジューラ・メモリ
KR100296850B1 (ko) * 1992-05-28 2001-10-24 썬 마이크로시스템즈, 인코포레이티드 캐시램용다수의뱅크열용장성초기화제어기
US5471479A (en) * 1992-08-06 1995-11-28 Motorola, Inc. Arrangement for column sparing of memory
JP2980472B2 (ja) * 1992-12-21 1999-11-22 株式会社東芝 半導体記憶装置
JP2833574B2 (ja) * 1996-03-28 1998-12-09 日本電気株式会社 不揮発性半導体記憶装置
US6249464B1 (en) 1999-12-15 2001-06-19 Cypress Semiconductor Corp. Block redundancy in ultra low power memory circuits
JP2007257791A (ja) * 2006-03-24 2007-10-04 Fujitsu Ltd 半導体記憶装置
US8837192B2 (en) * 2012-10-19 2014-09-16 Taiwan Semiconductor Manufacturing Company Limited N-bit rom cell
WO2019009902A1 (en) * 2017-07-06 2019-01-10 Hewlett-Packard Development Company, L.P. DECODERS FOR MEMORY OF FLUID EJECTION DEVICES

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281398A (en) * 1980-02-12 1981-07-28 Mostek Corporation Block redundancy for memory array
CA1158775A (en) * 1980-06-04 1983-12-13 Thomas L. Phinney Computer annotation system
JPS57150197A (en) * 1981-03-11 1982-09-16 Nippon Telegr & Teleph Corp <Ntt> Storage circuit
US4471472A (en) * 1982-02-05 1984-09-11 Advanced Micro Devices, Inc. Semiconductor memory utilizing an improved redundant circuitry configuration

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167760U (en, 2012) * 1988-05-16 1989-11-27

Also Published As

Publication number Publication date
IE840285L (en) 1984-08-08
KR890005156B1 (ko) 1989-12-14
EP0116464A3 (en) 1987-06-03
IE56815B1 (en) 1991-12-18
DE3484514D1 (de) 1991-06-06
KR840008073A (ko) 1984-12-12
CA1214553A (en) 1986-11-25
EP0116464B1 (en) 1991-05-02
EP0116464A2 (en) 1984-08-22
JPS59144098A (ja) 1984-08-17
US4604730A (en) 1986-08-05

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