JPS6130360B2 - - Google Patents

Info

Publication number
JPS6130360B2
JPS6130360B2 JP57006257A JP625782A JPS6130360B2 JP S6130360 B2 JPS6130360 B2 JP S6130360B2 JP 57006257 A JP57006257 A JP 57006257A JP 625782 A JP625782 A JP 625782A JP S6130360 B2 JPS6130360 B2 JP S6130360B2
Authority
JP
Japan
Prior art keywords
memory
address
defective
decoder circuit
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57006257A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125299A (ja
Inventor
Shinji Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57006257A priority Critical patent/JPS58125299A/ja
Publication of JPS58125299A publication Critical patent/JPS58125299A/ja
Publication of JPS6130360B2 publication Critical patent/JPS6130360B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP57006257A 1982-01-19 1982-01-19 冗長度を有するメモリ装置 Granted JPS58125299A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57006257A JPS58125299A (ja) 1982-01-19 1982-01-19 冗長度を有するメモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57006257A JPS58125299A (ja) 1982-01-19 1982-01-19 冗長度を有するメモリ装置

Publications (2)

Publication Number Publication Date
JPS58125299A JPS58125299A (ja) 1983-07-26
JPS6130360B2 true JPS6130360B2 (en, 2012) 1986-07-12

Family

ID=11633417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57006257A Granted JPS58125299A (ja) 1982-01-19 1982-01-19 冗長度を有するメモリ装置

Country Status (1)

Country Link
JP (1) JPS58125299A (en, 2012)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577294A (en) * 1983-04-18 1986-03-18 Advanced Micro Devices, Inc. Redundant memory circuit and method of programming and verifying the circuit
US4768169A (en) * 1983-10-28 1988-08-30 Seeq Technology, Inc. Fault-tolerant memory array
US4654830A (en) * 1984-11-27 1987-03-31 Monolithic Memories, Inc. Method and structure for disabling and replacing defective memory in a PROM
JP2594638B2 (ja) * 1989-02-09 1997-03-26 富士通株式会社 半導体記憶装置
JPH02201800A (ja) * 1989-01-31 1990-08-09 Fujitsu Ltd 半導体記憶装置
US6744681B2 (en) * 2001-07-24 2004-06-01 Hewlett-Packard Development Company, L.P. Fault-tolerant solid state memory

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS495677A (en, 2012) * 1972-05-04 1974-01-18
JPS5373088A (en) * 1976-12-13 1978-06-29 Fujitsu Ltd Semiconductor element
JPS5384634A (en) * 1976-12-30 1978-07-26 Fujitsu Ltd Ic memory unit device

Also Published As

Publication number Publication date
JPS58125299A (ja) 1983-07-26

Similar Documents

Publication Publication Date Title
EP0034070B1 (en) Fault tolerant memory system
US4047163A (en) Fault-tolerant cell addressable array
US4051354A (en) Fault-tolerant cell addressable array
JP2555252B2 (ja) 半導体メモリ装置
US4392211A (en) Semiconductor memory device technical field
JPH0254500A (ja) 半導体メモリセル
JP2899175B2 (ja) 半導体記憶装置
KR940012406A (ko) 고집적 및 신뢰성이 향상되는 로우리던던시 회로 및 이를 구비하는 반도체 메모리 장치
US4485459A (en) Redundant columns for byte wide memories
JPH0358399A (ja) 半導体記憶装置
EP1398796B1 (en) Dedicated redundancy circuits for different operations in a flash memory device and methods of operating the same
JPH0748314B2 (ja) 半導体記憶装置
US4761767A (en) High reliability integrated circuit memory
JP2616544B2 (ja) 半導体記憶装置
JPH06203595A (ja) ユニバーサル・モジューラ・メモリ
JPS6130360B2 (en, 2012)
JPH1166879A (ja) 半導体記憶装置
JPH04222998A (ja) 半導体メモリ装置
US4707810A (en) Integrated circuit memory
US5952845A (en) Semiconductor programmable test arrangement such as an antifuse ID circuit having common access switches and/or common programming switches
JPH06203594A (ja) 半導体記憶装置
US4489402A (en) Semiconductor memory device
JPH09213097A (ja) ヒューズ装置及びそれを用いた半導体集積回路装置
JPS6138560B2 (en, 2012)
KR20040082636A (ko) 대기 전류 불량의 판별 기능을 갖는 반도체 메모리 장치