JPS622709B2 - - Google Patents
Info
- Publication number
- JPS622709B2 JPS622709B2 JP55005124A JP512480A JPS622709B2 JP S622709 B2 JPS622709 B2 JP S622709B2 JP 55005124 A JP55005124 A JP 55005124A JP 512480 A JP512480 A JP 512480A JP S622709 B2 JPS622709 B2 JP S622709B2
- Authority
- JP
- Japan
- Prior art keywords
- gaalas
- gaas
- metal
- etching
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 4
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010420 art technique Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP512480A JPS56101768A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP512480A JPS56101768A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101768A JPS56101768A (en) | 1981-08-14 |
JPS622709B2 true JPS622709B2 (US07534539-20090519-C00280.png) | 1987-01-21 |
Family
ID=11602560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP512480A Granted JPS56101768A (en) | 1980-01-18 | 1980-01-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56101768A (US07534539-20090519-C00280.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63179325U (US07534539-20090519-C00280.png) * | 1987-05-11 | 1988-11-21 | ||
JPS644729U (US07534539-20090519-C00280.png) * | 1987-06-29 | 1989-01-12 | ||
JPH01142157A (ja) * | 1987-11-26 | 1989-06-05 | Ig Tech Res Inc | 屋根構造 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58143577A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | 埋め込みゲ−ト電界効果トランジスタの製造方法 |
JPS59228718A (ja) * | 1983-06-11 | 1984-12-22 | Toshiba Corp | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943583A (US07534539-20090519-C00280.png) * | 1972-08-30 | 1974-04-24 | ||
US4145459A (en) * | 1978-02-02 | 1979-03-20 | Rca Corporation | Method of making a short gate field effect transistor |
-
1980
- 1980-01-18 JP JP512480A patent/JPS56101768A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4943583A (US07534539-20090519-C00280.png) * | 1972-08-30 | 1974-04-24 | ||
US4145459A (en) * | 1978-02-02 | 1979-03-20 | Rca Corporation | Method of making a short gate field effect transistor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63179325U (US07534539-20090519-C00280.png) * | 1987-05-11 | 1988-11-21 | ||
JPS644729U (US07534539-20090519-C00280.png) * | 1987-06-29 | 1989-01-12 | ||
JPH01142157A (ja) * | 1987-11-26 | 1989-06-05 | Ig Tech Res Inc | 屋根構造 |
Also Published As
Publication number | Publication date |
---|---|
JPS56101768A (en) | 1981-08-14 |
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