JPS62150826A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS62150826A
JPS62150826A JP60295063A JP29506385A JPS62150826A JP S62150826 A JPS62150826 A JP S62150826A JP 60295063 A JP60295063 A JP 60295063A JP 29506385 A JP29506385 A JP 29506385A JP S62150826 A JPS62150826 A JP S62150826A
Authority
JP
Japan
Prior art keywords
film
mask material
mask
etched
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60295063A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476496B2 (enExample
Inventor
Hitoshi Tsuji
均 辻
Chiharu Kato
千晴 加藤
Kiyoshi Takaoki
高沖　潔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60295063A priority Critical patent/JPS62150826A/ja
Priority to US06/942,076 priority patent/US4792534A/en
Publication of JPS62150826A publication Critical patent/JPS62150826A/ja
Publication of JPH0476496B2 publication Critical patent/JPH0476496B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Drying Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP60295063A 1985-12-25 1985-12-25 半導体装置の製造方法 Granted JPS62150826A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60295063A JPS62150826A (ja) 1985-12-25 1985-12-25 半導体装置の製造方法
US06/942,076 US4792534A (en) 1985-12-25 1986-12-15 Method of manufacturing a semiconductor device involving sidewall spacer formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60295063A JPS62150826A (ja) 1985-12-25 1985-12-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62150826A true JPS62150826A (ja) 1987-07-04
JPH0476496B2 JPH0476496B2 (enExample) 1992-12-03

Family

ID=17815835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60295063A Granted JPS62150826A (ja) 1985-12-25 1985-12-25 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US4792534A (enExample)
JP (1) JPS62150826A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136337A (ja) * 1987-10-30 1989-05-29 Internatl Business Mach Corp <Ibm> 基板上の異なる幅のスペーサを形成する方法
JP2003501800A (ja) * 1999-05-26 2003-01-14 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 窒化物スペーサーを用いて高密度のメモリセルおよび小さな間隔を作る方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279990A (en) * 1990-03-02 1994-01-18 Motorola, Inc. Method of making a small geometry contact using sidewall spacers
JPH05121701A (ja) * 1991-10-25 1993-05-18 Rohm Co Ltd Ｎａｎｄ構造の半導体装置の製造方法
US5503959A (en) * 1991-10-31 1996-04-02 Intel Corporation Lithographic technique for patterning a semiconductor device
US5296400A (en) * 1991-12-14 1994-03-22 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a contact of a highly integrated semiconductor device
US5612254A (en) * 1992-06-29 1997-03-18 Intel Corporation Methods of forming an interconnect on a semiconductor substrate
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
US5296410A (en) * 1992-12-16 1994-03-22 Samsung Electronics Co., Ltd. Method for separating fine patterns of a semiconductor device
EP0655773A1 (en) * 1993-10-27 1995-05-31 STMicroelectronics S.r.l. Lithographic image size reduction
US5435888A (en) * 1993-12-06 1995-07-25 Sgs-Thomson Microelectronics, Inc. Enhanced planarization technique for an integrated circuit
US6107194A (en) * 1993-12-17 2000-08-22 Stmicroelectronics, Inc. Method of fabricating an integrated circuit
US5439846A (en) * 1993-12-17 1995-08-08 Sgs-Thomson Microelectronics, Inc. Self-aligned method for forming contact with zero offset to gate
US6284584B1 (en) 1993-12-17 2001-09-04 Stmicroelectronics, Inc. Method of masking for periphery salicidation of active regions
US5523258A (en) * 1994-04-29 1996-06-04 Cypress Semiconductor Corp. Method for avoiding lithographic rounding effects for semiconductor fabrication
US5972773A (en) * 1995-03-23 1999-10-26 Advanced Micro Devices, Inc. High quality isolation for high density and high performance integrated circuits
US5654238A (en) * 1995-08-03 1997-08-05 International Business Machines Corporation Method for etching vertical contact holes without substrate damage caused by directional etching
US6080672A (en) * 1997-08-20 2000-06-27 Micron Technology, Inc. Self-aligned contact formation for semiconductor devices
US20030064585A1 (en) * 2001-09-28 2003-04-03 Yider Wu Manufacture of semiconductor device with spacing narrower than lithography limit
US6780708B1 (en) 2003-03-05 2004-08-24 Advanced Micro Devices, Inc. Method of forming core and periphery gates including two critical masking steps to form a hard mask in a core region that includes a critical dimension less than achievable at a resolution limit of lithography
US7132327B2 (en) * 2004-05-25 2006-11-07 Freescale Semiconductor, Inc. Decoupled complementary mask patterning transfer method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132624A (ja) * 1983-01-19 1984-07-30 Toshiba Corp 半導体装置の製造方法
JPS607736A (ja) * 1983-06-27 1985-01-16 Toshiba Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564238A (en) * 1979-06-23 1981-01-17 Mitsubishi Electric Corp Forming of pattern
US4472240A (en) * 1981-08-21 1984-09-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
JPS6010644A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 半導体装置の製造方法
US4532002A (en) * 1984-04-10 1985-07-30 Rca Corporation Multilayer planarizing structure for lift-off technique
US4557797A (en) * 1984-06-01 1985-12-10 Texas Instruments Incorporated Resist process using anti-reflective coating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132624A (ja) * 1983-01-19 1984-07-30 Toshiba Corp 半導体装置の製造方法
JPS607736A (ja) * 1983-06-27 1985-01-16 Toshiba Corp 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01136337A (ja) * 1987-10-30 1989-05-29 Internatl Business Mach Corp <Ibm> 基板上の異なる幅のスペーサを形成する方法
JP2003501800A (ja) * 1999-05-26 2003-01-14 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 窒化物スペーサーを用いて高密度のメモリセルおよび小さな間隔を作る方法

Also Published As

Publication number Publication date
JPH0476496B2 (enExample) 1992-12-03
US4792534A (en) 1988-12-20

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