JPS6155252B2 - - Google Patents

Info

Publication number
JPS6155252B2
JPS6155252B2 JP56053342A JP5334281A JPS6155252B2 JP S6155252 B2 JPS6155252 B2 JP S6155252B2 JP 56053342 A JP56053342 A JP 56053342A JP 5334281 A JP5334281 A JP 5334281A JP S6155252 B2 JPS6155252 B2 JP S6155252B2
Authority
JP
Japan
Prior art keywords
substrate
polycrystalline silicon
oxide film
shaped groove
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56053342A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167655A (en
Inventor
Akinobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKYUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority to JP56053342A priority Critical patent/JPS57167655A/ja
Publication of JPS57167655A publication Critical patent/JPS57167655A/ja
Publication of JPS6155252B2 publication Critical patent/JPS6155252B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/019—
    • H10W10/10—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP56053342A 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate Granted JPS57167655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56053342A JPS57167655A (en) 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56053342A JPS57167655A (en) 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate

Publications (2)

Publication Number Publication Date
JPS57167655A JPS57167655A (en) 1982-10-15
JPS6155252B2 true JPS6155252B2 (enExample) 1986-11-27

Family

ID=12940087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56053342A Granted JPS57167655A (en) 1981-04-08 1981-04-08 Manufacture of insulating isolation substrate

Country Status (1)

Country Link
JP (1) JPS57167655A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2566175B2 (ja) * 1990-04-27 1996-12-25 セイコー電子工業株式会社 半導体装置及びその製造方法
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
TW214603B (en) * 1992-05-13 1993-10-11 Seiko Electron Co Ltd Semiconductor device
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
JP3526058B2 (ja) * 1992-08-19 2004-05-10 セイコーインスツルメンツ株式会社 光弁用半導体装置
JPH0798460A (ja) 1992-10-21 1995-04-11 Seiko Instr Inc 半導体装置及び光弁装置
CN106098629B (zh) * 2016-07-21 2019-02-19 深圳市华星光电技术有限公司 Tft基板及其制作方法

Also Published As

Publication number Publication date
JPS57167655A (en) 1982-10-15

Similar Documents

Publication Publication Date Title
JP2685819B2 (ja) 誘電体分離半導体基板とその製造方法
US4576851A (en) Semiconductor substrate
JPS6155252B2 (enExample)
JPH0799239A (ja) 半導体装置及び半導体装置の製造方法
JP2699359B2 (ja) 半導体基板の製造方法
US4411060A (en) Method of manufacturing dielectrically-isolated single-crystal semiconductor substrates
JPS6152983B2 (enExample)
JPS6155251B2 (enExample)
JP2552936B2 (ja) 誘電体分離基板およびこれを用いた半導体集積回路装置
JPH01302740A (ja) 誘電体分離半導体基板およびその製造方法
JPH0488657A (ja) 半導体装置とその製造方法
JP2681420B2 (ja) 誘電体基板の製造方法
JPS5918654A (ja) 誘電体分離基板の製造方法
JPS6265317A (ja) 半導体単結晶膜形成のためのウエハ構造
JPS5821854A (ja) 半導体回路素子
JPH04361555A (ja) 半導体基板
JPS59121823A (ja) 単結晶シリコン膜形成法
JPH0212854A (ja) 誘電体分離型半導体集積回路基板の製造方法
JPH07112007B2 (ja) 誘電体分離基板およびその製造方法
JPS62124753A (ja) 絶縁層分離基板の製法
JPS6221269B2 (enExample)
JPS6252923A (ja) 誘電体による半導体層の絶縁分離方法
JPS6226182B2 (enExample)
JPS6095936A (ja) 半導体基体の製造方法
JPH05175325A (ja) 誘電体分離基板及びその製造方法