JPS6150287A - ダイナミツクメモリの自動リフレツシユ制御回路 - Google Patents

ダイナミツクメモリの自動リフレツシユ制御回路

Info

Publication number
JPS6150287A
JPS6150287A JP59172754A JP17275484A JPS6150287A JP S6150287 A JPS6150287 A JP S6150287A JP 59172754 A JP59172754 A JP 59172754A JP 17275484 A JP17275484 A JP 17275484A JP S6150287 A JPS6150287 A JP S6150287A
Authority
JP
Japan
Prior art keywords
refresh
control circuit
inverter
memory cell
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59172754A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444836B2 (enExample
Inventor
Takayasu Sakurai
貴康 桜井
Tetsuya Iizuka
飯塚　哲哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59172754A priority Critical patent/JPS6150287A/ja
Priority to EP85305697A priority patent/EP0176203B1/en
Priority to DE8585305697T priority patent/DE3584929D1/de
Priority to KR1019850005945A priority patent/KR910000384B1/ko
Priority to US06/767,602 priority patent/US4682306A/en
Publication of JPS6150287A publication Critical patent/JPS6150287A/ja
Publication of JPH0444836B2 publication Critical patent/JPH0444836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP59172754A 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路 Granted JPS6150287A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59172754A JPS6150287A (ja) 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路
EP85305697A EP0176203B1 (en) 1984-08-20 1985-08-12 Self refresh control circuit for dynamic semiconductor memory device
DE8585305697T DE3584929D1 (de) 1984-08-20 1985-08-12 Automatische refreshsteuerungsschaltung fuer eine dynamische halbleiterspeicherschaltung.
KR1019850005945A KR910000384B1 (ko) 1984-08-20 1985-08-17 반도체 기억장치
US06/767,602 US4682306A (en) 1984-08-20 1985-08-20 Self-refresh control circuit for dynamic semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172754A JPS6150287A (ja) 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路

Publications (2)

Publication Number Publication Date
JPS6150287A true JPS6150287A (ja) 1986-03-12
JPH0444836B2 JPH0444836B2 (enExample) 1992-07-22

Family

ID=15947700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172754A Granted JPS6150287A (ja) 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路

Country Status (4)

Country Link
US (1) US4682306A (enExample)
EP (1) EP0176203B1 (enExample)
JP (1) JPS6150287A (enExample)
DE (1) DE3584929D1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63251996A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp タイマ回路
JPH01302595A (ja) * 1988-05-30 1989-12-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH04344387A (ja) * 1991-05-16 1992-11-30 Samsung Electron Co Ltd 素子温度に応じたリフレッシュ動作を実行するためのリフレッシュ要請信号発生装置を用いた半導体メモリー装置
US5410278A (en) * 1991-12-19 1995-04-25 Sharp Kabushiki Kaisha Ring oscillator having a variable oscillating frequency
US6075739A (en) * 1997-02-17 2000-06-13 Sharp Kabushiki Kaisha Semiconductor storage device performing self-refresh operation in an optimal cycle

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121197A (ja) * 1986-11-07 1988-05-25 Fujitsu Ltd 半導体記憶装置
US4870620A (en) * 1987-01-06 1989-09-26 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory device with internal refresh
JPS6432489A (en) * 1987-07-27 1989-02-02 Matsushita Electronics Corp Memory device
JP2534757B2 (ja) * 1988-07-06 1996-09-18 株式会社東芝 リフレッシュ回路
GB8827130D0 (en) * 1988-11-21 1988-12-29 Krilic G Self-refreshable dynamic memory cell
US5321661A (en) * 1991-11-20 1994-06-14 Oki Electric Industry Co., Ltd. Self-refreshing memory with on-chip timer test circuit
AU6988494A (en) * 1993-05-28 1994-12-20 Rambus Inc. Method and apparatus for implementing refresh in a synchronous dram system
US5455801A (en) * 1994-07-15 1995-10-03 Micron Semiconductor, Inc. Circuit having a control array of memory cells and a current source and a method for generating a self-refresh timing signal
US5581198A (en) * 1995-02-24 1996-12-03 Xilinx, Inc. Shadow DRAM for programmable logic devices
US5847577A (en) * 1995-02-24 1998-12-08 Xilinx, Inc. DRAM memory cell for programmable logic devices
KR100198617B1 (ko) * 1995-12-27 1999-06-15 구본준 모오스 캐패시터의 누설전압감지회로
KR100363105B1 (ko) 1998-12-23 2003-02-19 주식회사 하이닉스반도체 셀 리키지 커런트 보상용 셀프 리프레쉬 장치
US6628558B2 (en) 2001-06-20 2003-09-30 Cypress Semiconductor Corp. Proportional to temperature voltage generator
KR100413484B1 (ko) * 2001-06-28 2003-12-31 주식회사 하이닉스반도체 반도체 메모리 장치의 리프레쉬 회로
US6714473B1 (en) 2001-11-30 2004-03-30 Cypress Semiconductor Corp. Method and architecture for refreshing a 1T memory proportional to temperature
US7583551B2 (en) * 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7564274B2 (en) * 2005-02-24 2009-07-21 Icera, Inc. Detecting excess current leakage of a CMOS device
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60212896A (ja) * 1984-04-06 1985-10-25 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705392A (en) * 1971-09-07 1972-12-05 Texas Instruments Inc Mos dynamic memory
JPS5683888A (en) * 1979-12-11 1981-07-08 Nec Corp Memory circuit
US4491938A (en) * 1981-12-28 1985-01-01 Texas Instruments Incorporated Low voltage RAM cell
JPS5956291A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd Ｍｏｓ記憶装置
JPS59227090A (ja) * 1983-06-06 1984-12-20 Hitachi Ltd 不揮発性メモリ装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60212896A (ja) * 1984-04-06 1985-10-25 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63251996A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp タイマ回路
JPH01302595A (ja) * 1988-05-30 1989-12-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH04344387A (ja) * 1991-05-16 1992-11-30 Samsung Electron Co Ltd 素子温度に応じたリフレッシュ動作を実行するためのリフレッシュ要請信号発生装置を用いた半導体メモリー装置
US5410278A (en) * 1991-12-19 1995-04-25 Sharp Kabushiki Kaisha Ring oscillator having a variable oscillating frequency
US6075739A (en) * 1997-02-17 2000-06-13 Sharp Kabushiki Kaisha Semiconductor storage device performing self-refresh operation in an optimal cycle

Also Published As

Publication number Publication date
EP0176203A2 (en) 1986-04-02
JPH0444836B2 (enExample) 1992-07-22
US4682306A (en) 1987-07-21
EP0176203A3 (en) 1988-03-02
DE3584929D1 (de) 1992-01-30
EP0176203B1 (en) 1991-12-18

Similar Documents

Publication Publication Date Title
JPS6150287A (ja) ダイナミツクメモリの自動リフレツシユ制御回路
EP0173980B1 (en) Semiconductor integrated circuit device
CN100587834C (zh) 存储器和用于刷新存储器阵列的方法
US8374047B2 (en) Dynamic random access memory device and method for self-refreshing memory cells
US4933902A (en) Method of and apparatus for reducing current of semiconductor memory device
JP2812230B2 (ja) バイアス電圧発生回路
JPH10289573A (ja) 半導体記憶装置
US6298000B1 (en) Dynamic type semiconductor memory device operable in self refresh operation mode and self refresh method thereof
CN100419900C (zh) 刷新同温度成比例的单晶体管存储器的方法和结构
US6781909B2 (en) Semiconductor memory device and method for controlling semiconductor memory device
KR100263529B1 (ko) 반도체 기억 장치
US5179535A (en) Substrate bias voltage generating circuit including an internal frequency divider and driven by an externally applied clock signal
JP2762589B2 (ja) 半導体メモリ回路
KR100244837B1 (ko) 기판 전압의 크기를 모드에 따라서 설정할 수 있는 반도체 기억 장치
JPH0770215B2 (ja) 半導体集積回路装置
JPH0673237B2 (ja) 半導体集積回路装置
JPH0814986B2 (ja) リフレッシュ機能内蔵ダイナミック型半導体記憶装置
JP2875303B2 (ja) 半導体集積回路
KR910000384B1 (ko) 반도체 기억장치
JPS61294690A (ja) 半導体集積回路装置
JP2645296B2 (ja) 半導体記憶装置
JPH0453033B2 (enExample)
JPS61193514A (ja) タイマ回路
JPH01235095A (ja) ダイナミック型半導体記憶装置
JPH06223565A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees