DE3584929D1 - Automatische refreshsteuerungsschaltung fuer eine dynamische halbleiterspeicherschaltung. - Google Patents
Automatische refreshsteuerungsschaltung fuer eine dynamische halbleiterspeicherschaltung.Info
- Publication number
- DE3584929D1 DE3584929D1 DE8585305697T DE3584929T DE3584929D1 DE 3584929 D1 DE3584929 D1 DE 3584929D1 DE 8585305697 T DE8585305697 T DE 8585305697T DE 3584929 T DE3584929 T DE 3584929T DE 3584929 D1 DE3584929 D1 DE 3584929D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- refresh control
- dynamic semiconductor
- control circuit
- automatic refresh
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59172754A JPS6150287A (ja) | 1984-08-20 | 1984-08-20 | ダイナミツクメモリの自動リフレツシユ制御回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3584929D1 true DE3584929D1 (de) | 1992-01-30 |
Family
ID=15947700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585305697T Expired - Lifetime DE3584929D1 (de) | 1984-08-20 | 1985-08-12 | Automatische refreshsteuerungsschaltung fuer eine dynamische halbleiterspeicherschaltung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4682306A (de) |
EP (1) | EP0176203B1 (de) |
JP (1) | JPS6150287A (de) |
DE (1) | DE3584929D1 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63121197A (ja) * | 1986-11-07 | 1988-05-25 | Fujitsu Ltd | 半導体記憶装置 |
US4870620A (en) * | 1987-01-06 | 1989-09-26 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory device with internal refresh |
JPS63251996A (ja) * | 1987-04-08 | 1988-10-19 | Mitsubishi Electric Corp | タイマ回路 |
JPS6432489A (en) * | 1987-07-27 | 1989-02-02 | Matsushita Electronics Corp | Memory device |
JPH01302595A (ja) * | 1988-05-30 | 1989-12-06 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JP2534757B2 (ja) * | 1988-07-06 | 1996-09-18 | 株式会社東芝 | リフレッシュ回路 |
GB8827130D0 (en) * | 1988-11-21 | 1988-12-29 | Krilic G | Self-refreshable dynamic memory cell |
KR920022293A (ko) * | 1991-05-16 | 1992-12-19 | 김광호 | 비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치 |
US5321661A (en) * | 1991-11-20 | 1994-06-14 | Oki Electric Industry Co., Ltd. | Self-refreshing memory with on-chip timer test circuit |
JP2998944B2 (ja) * | 1991-12-19 | 2000-01-17 | シャープ株式会社 | リングオシレータ |
AU6988494A (en) * | 1993-05-28 | 1994-12-20 | Rambus Inc. | Method and apparatus for implementing refresh in a synchronous dram system |
US5455801A (en) * | 1994-07-15 | 1995-10-03 | Micron Semiconductor, Inc. | Circuit having a control array of memory cells and a current source and a method for generating a self-refresh timing signal |
US5581198A (en) * | 1995-02-24 | 1996-12-03 | Xilinx, Inc. | Shadow DRAM for programmable logic devices |
US5847577A (en) * | 1995-02-24 | 1998-12-08 | Xilinx, Inc. | DRAM memory cell for programmable logic devices |
KR100198617B1 (ko) * | 1995-12-27 | 1999-06-15 | 구본준 | 모오스 캐패시터의 누설전압감지회로 |
JP3535963B2 (ja) * | 1997-02-17 | 2004-06-07 | シャープ株式会社 | 半導体記憶装置 |
KR100363105B1 (ko) | 1998-12-23 | 2003-02-19 | 주식회사 하이닉스반도체 | 셀 리키지 커런트 보상용 셀프 리프레쉬 장치 |
US6628558B2 (en) | 2001-06-20 | 2003-09-30 | Cypress Semiconductor Corp. | Proportional to temperature voltage generator |
KR100413484B1 (ko) * | 2001-06-28 | 2003-12-31 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 리프레쉬 회로 |
US6714473B1 (en) | 2001-11-30 | 2004-03-30 | Cypress Semiconductor Corp. | Method and architecture for refreshing a 1T memory proportional to temperature |
US7583551B2 (en) * | 2004-03-10 | 2009-09-01 | Micron Technology, Inc. | Power management control and controlling memory refresh operations |
US7564274B2 (en) * | 2005-02-24 | 2009-07-21 | Icera, Inc. | Detecting excess current leakage of a CMOS device |
KR102373544B1 (ko) | 2015-11-06 | 2022-03-11 | 삼성전자주식회사 | 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3705392A (en) * | 1971-09-07 | 1972-12-05 | Texas Instruments Inc | Mos dynamic memory |
JPS5683888A (en) * | 1979-12-11 | 1981-07-08 | Nec Corp | Memory circuit |
US4491938A (en) * | 1981-12-28 | 1985-01-01 | Texas Instruments Incorporated | Low voltage RAM cell |
JPS5956291A (ja) * | 1982-09-24 | 1984-03-31 | Hitachi Ltd | Mos記憶装置 |
JPS59227090A (ja) * | 1983-06-06 | 1984-12-20 | Hitachi Ltd | 不揮発性メモリ装置 |
JPS60212896A (ja) * | 1984-04-06 | 1985-10-25 | Hitachi Micro Comput Eng Ltd | ダイナミツク型ram |
-
1984
- 1984-08-20 JP JP59172754A patent/JPS6150287A/ja active Granted
-
1985
- 1985-08-12 EP EP85305697A patent/EP0176203B1/de not_active Expired
- 1985-08-12 DE DE8585305697T patent/DE3584929D1/de not_active Expired - Lifetime
- 1985-08-20 US US06/767,602 patent/US4682306A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0176203B1 (de) | 1991-12-18 |
EP0176203A2 (de) | 1986-04-02 |
US4682306A (en) | 1987-07-21 |
JPH0444836B2 (de) | 1992-07-22 |
EP0176203A3 (en) | 1988-03-02 |
JPS6150287A (ja) | 1986-03-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |