JPH0444836B2 - - Google Patents

Info

Publication number
JPH0444836B2
JPH0444836B2 JP59172754A JP17275484A JPH0444836B2 JP H0444836 B2 JPH0444836 B2 JP H0444836B2 JP 59172754 A JP59172754 A JP 59172754A JP 17275484 A JP17275484 A JP 17275484A JP H0444836 B2 JPH0444836 B2 JP H0444836B2
Authority
JP
Japan
Prior art keywords
refresh
capacitor
control circuit
circuit
control means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59172754A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6150287A (ja
Inventor
Takayasu Sakurai
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59172754A priority Critical patent/JPS6150287A/ja
Priority to EP85305697A priority patent/EP0176203B1/en
Priority to DE8585305697T priority patent/DE3584929D1/de
Priority to KR1019850005945A priority patent/KR910000384B1/ko
Priority to US06/767,602 priority patent/US4682306A/en
Publication of JPS6150287A publication Critical patent/JPS6150287A/ja
Publication of JPH0444836B2 publication Critical patent/JPH0444836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP59172754A 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路 Granted JPS6150287A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59172754A JPS6150287A (ja) 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路
EP85305697A EP0176203B1 (en) 1984-08-20 1985-08-12 Self refresh control circuit for dynamic semiconductor memory device
DE8585305697T DE3584929D1 (de) 1984-08-20 1985-08-12 Automatische refreshsteuerungsschaltung fuer eine dynamische halbleiterspeicherschaltung.
KR1019850005945A KR910000384B1 (ko) 1984-08-20 1985-08-17 반도체 기억장치
US06/767,602 US4682306A (en) 1984-08-20 1985-08-20 Self-refresh control circuit for dynamic semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59172754A JPS6150287A (ja) 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路

Publications (2)

Publication Number Publication Date
JPS6150287A JPS6150287A (ja) 1986-03-12
JPH0444836B2 true JPH0444836B2 (enExample) 1992-07-22

Family

ID=15947700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59172754A Granted JPS6150287A (ja) 1984-08-20 1984-08-20 ダイナミツクメモリの自動リフレツシユ制御回路

Country Status (4)

Country Link
US (1) US4682306A (enExample)
EP (1) EP0176203B1 (enExample)
JP (1) JPS6150287A (enExample)
DE (1) DE3584929D1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121197A (ja) * 1986-11-07 1988-05-25 Fujitsu Ltd 半導体記憶装置
US4870620A (en) * 1987-01-06 1989-09-26 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory device with internal refresh
JPS63251996A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp タイマ回路
JPS6432489A (en) * 1987-07-27 1989-02-02 Matsushita Electronics Corp Memory device
JPH01302595A (ja) * 1988-05-30 1989-12-06 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JP2534757B2 (ja) * 1988-07-06 1996-09-18 株式会社東芝 リフレッシュ回路
GB8827130D0 (en) * 1988-11-21 1988-12-29 Krilic G Self-refreshable dynamic memory cell
KR920022293A (ko) * 1991-05-16 1992-12-19 김광호 비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치
US5321661A (en) * 1991-11-20 1994-06-14 Oki Electric Industry Co., Ltd. Self-refreshing memory with on-chip timer test circuit
JP2998944B2 (ja) * 1991-12-19 2000-01-17 シャープ株式会社 リングオシレータ
AU6988494A (en) * 1993-05-28 1994-12-20 Rambus Inc. Method and apparatus for implementing refresh in a synchronous dram system
US5455801A (en) * 1994-07-15 1995-10-03 Micron Semiconductor, Inc. Circuit having a control array of memory cells and a current source and a method for generating a self-refresh timing signal
US5581198A (en) * 1995-02-24 1996-12-03 Xilinx, Inc. Shadow DRAM for programmable logic devices
US5847577A (en) * 1995-02-24 1998-12-08 Xilinx, Inc. DRAM memory cell for programmable logic devices
KR100198617B1 (ko) * 1995-12-27 1999-06-15 구본준 모오스 캐패시터의 누설전압감지회로
JP3535963B2 (ja) * 1997-02-17 2004-06-07 シャープ株式会社 半導体記憶装置
KR100363105B1 (ko) 1998-12-23 2003-02-19 주식회사 하이닉스반도체 셀 리키지 커런트 보상용 셀프 리프레쉬 장치
US6628558B2 (en) 2001-06-20 2003-09-30 Cypress Semiconductor Corp. Proportional to temperature voltage generator
KR100413484B1 (ko) * 2001-06-28 2003-12-31 주식회사 하이닉스반도체 반도체 메모리 장치의 리프레쉬 회로
US6714473B1 (en) 2001-11-30 2004-03-30 Cypress Semiconductor Corp. Method and architecture for refreshing a 1T memory proportional to temperature
US7583551B2 (en) * 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7564274B2 (en) * 2005-02-24 2009-07-21 Icera, Inc. Detecting excess current leakage of a CMOS device
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705392A (en) * 1971-09-07 1972-12-05 Texas Instruments Inc Mos dynamic memory
JPS5683888A (en) * 1979-12-11 1981-07-08 Nec Corp Memory circuit
US4491938A (en) * 1981-12-28 1985-01-01 Texas Instruments Incorporated Low voltage RAM cell
JPS5956291A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd Ｍｏｓ記憶装置
JPS59227090A (ja) * 1983-06-06 1984-12-20 Hitachi Ltd 不揮発性メモリ装置
JPS60212896A (ja) * 1984-04-06 1985-10-25 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ

Also Published As

Publication number Publication date
JPS6150287A (ja) 1986-03-12
EP0176203A2 (en) 1986-04-02
US4682306A (en) 1987-07-21
EP0176203A3 (en) 1988-03-02
DE3584929D1 (de) 1992-01-30
EP0176203B1 (en) 1991-12-18

Similar Documents

Publication Publication Date Title
JPH0444836B2 (enExample)
EP0173980B1 (en) Semiconductor integrated circuit device
US5903506A (en) Temperature sensitive oscillator circuit
US7768859B2 (en) Dynamic random access memory device and method for self-refreshing memory cells
CN100587834C (zh) 存储器和用于刷新存储器阵列的方法
US6298000B1 (en) Dynamic type semiconductor memory device operable in self refresh operation mode and self refresh method thereof
US6781909B2 (en) Semiconductor memory device and method for controlling semiconductor memory device
KR100244837B1 (ko) 기판 전압의 크기를 모드에 따라서 설정할 수 있는 반도체 기억 장치
JPH05205465A (ja) 半導体メモリ装置
JPH0799621B2 (ja) ダイナミック型半導体記憶装置
JPH0349157B2 (enExample)
JPH0673237B2 (ja) 半導体集積回路装置
JPH05225777A (ja) 半導体メモリ装置
JPH0822693A (ja) 半導体記憶装置
KR910000384B1 (ko) 반도체 기억장치
JPH06150647A (ja) 半導体メモリ回路
JPH0453033B2 (enExample)
JP3089268B2 (ja) 半導体装置
JPH01235095A (ja) ダイナミック型半導体記憶装置
JPS6061990A (ja) タイマ−回路
JPS63251996A (ja) タイマ回路
JPS61193514A (ja) タイマ回路
JPH06223565A (ja) 半導体記憶装置
JPS59207089A (ja) 擬似スタテイツクメモリ
JPS6173299A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees