JPS6149822B2 - - Google Patents
Info
- Publication number
- JPS6149822B2 JPS6149822B2 JP53087988A JP8798878A JPS6149822B2 JP S6149822 B2 JPS6149822 B2 JP S6149822B2 JP 53087988 A JP53087988 A JP 53087988A JP 8798878 A JP8798878 A JP 8798878A JP S6149822 B2 JPS6149822 B2 JP S6149822B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- main electrode
- region
- imaging device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000006698 induction Effects 0.000 claims description 10
- 238000005036 potential barrier Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 230000003068 static effect Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8798878A JPS5515229A (en) | 1978-07-18 | 1978-07-18 | Semiconductor photograph device |
US06/039,445 US4427990A (en) | 1978-07-14 | 1979-05-15 | Semiconductor photo-electric converter with insulated gate over p-n charge storage region |
US07/332,441 US5019876A (en) | 1978-07-14 | 1989-04-04 | Semiconductor photo-electric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8798878A JPS5515229A (en) | 1978-07-18 | 1978-07-18 | Semiconductor photograph device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5515229A JPS5515229A (en) | 1980-02-02 |
JPS6149822B2 true JPS6149822B2 (ru) | 1986-10-31 |
Family
ID=13930187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8798878A Granted JPS5515229A (en) | 1978-07-14 | 1978-07-18 | Semiconductor photograph device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5515229A (ru) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5735369A (en) * | 1980-08-11 | 1982-02-25 | Mitsubishi Electric Corp | Semiconductor device |
JPS57136361A (en) * | 1981-02-17 | 1982-08-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
JPS58105672A (ja) * | 1981-12-17 | 1983-06-23 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
JPS58112867U (ja) * | 1982-01-26 | 1983-08-02 | カルソニックカンセイ株式会社 | 熱交換器 |
JPS5945781A (ja) * | 1982-09-09 | 1984-03-14 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
JPS59107578A (ja) * | 1982-12-11 | 1984-06-21 | Junichi Nishizawa | 半導体光電変換装置 |
JPS59107570A (ja) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | 半導体撮像装置 |
JPS59107569A (ja) * | 1982-12-13 | 1984-06-21 | Fuji Photo Film Co Ltd | 一次元半導体撮像装置 |
JPS59108463A (ja) | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS59108461A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS59108462A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 静電誘導トランジスタを具える固体撮像素子 |
JPS59108468A (ja) | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS59108344A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像素子 |
JPS59108346A (ja) * | 1982-12-14 | 1984-06-22 | Junichi Nishizawa | 固体撮像装置の製造方法 |
JPS59108464A (ja) | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS59108460A (ja) | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS59158551A (ja) * | 1983-02-28 | 1984-09-08 | Fuji Photo Film Co Ltd | 半導体光検出装置及びその駆動方法 |
JPS59158680A (ja) * | 1983-03-01 | 1984-09-08 | Junichi Nishizawa | 固体撮像装置 |
JPS6012760A (ja) * | 1983-07-02 | 1985-01-23 | Tadahiro Omi | 光電変換装置及び光電変換方法 |
JPS6058781A (ja) * | 1983-09-09 | 1985-04-04 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS60105272A (ja) * | 1983-11-14 | 1985-06-10 | Olympus Optical Co Ltd | 固体撮像装置 |
JPS60140752A (ja) * | 1983-12-28 | 1985-07-25 | Olympus Optical Co Ltd | 半導体光電変換装置 |
JPH0831991B2 (ja) | 1984-04-17 | 1996-03-27 | オリンパス光学工業株式会社 | 固体撮像装置 |
JPS6312161A (ja) * | 1986-07-03 | 1988-01-19 | Olympus Optical Co Ltd | 半導体撮像装置 |
JPH0340467A (ja) * | 1990-07-02 | 1991-02-21 | Canon Inc | 光電変換装置 |
JPH0340570A (ja) * | 1990-07-02 | 1991-02-21 | Canon Inc | 光トランジスタのリフレッシュ方法 |
JPH0340574A (ja) * | 1990-07-02 | 1991-02-21 | Canon Inc | 光電変換装置 |
-
1978
- 1978-07-18 JP JP8798878A patent/JPS5515229A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5515229A (en) | 1980-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6149822B2 (ru) | ||
US4427990A (en) | Semiconductor photo-electric converter with insulated gate over p-n charge storage region | |
US7183555B2 (en) | Charge or particle sensing | |
JP4295740B2 (ja) | 電荷結合素子型イメージセンサ | |
JPH0444465B2 (ru) | ||
US4686555A (en) | Solid state image sensor | |
JPS6230504B2 (ru) | ||
US20220254822A1 (en) | Uttb photodetector pixel unit, array and method | |
US3704376A (en) | Photo-electric junction field-effect sensors | |
US3964083A (en) | Punchthrough resetting jfet image sensor | |
US4980735A (en) | Solid state imaging element | |
JPH0454987B2 (ru) | ||
US4450464A (en) | Solid state area imaging apparatus having a charge transfer arrangement | |
JPH0646655B2 (ja) | 固体撮像装置 | |
US4673985A (en) | Semiconductor image sensor | |
JPS621257B2 (ru) | ||
GB1592373A (en) | Photodetector | |
JPH077844B2 (ja) | 静電誘導型半導体光電変換装置 | |
US5019876A (en) | Semiconductor photo-electric converter | |
JPH0455025B2 (ru) | ||
JP2746883B2 (ja) | 光電変換装置 | |
JPS6250992B2 (ru) | ||
WO2021225036A1 (ja) | 光検出装置、及び光センサの駆動方法 | |
JPH026228B2 (ru) | ||
JPS61157179A (ja) | 撮像装置 |