JPS6149822B2 - - Google Patents

Info

Publication number
JPS6149822B2
JPS6149822B2 JP53087988A JP8798878A JPS6149822B2 JP S6149822 B2 JPS6149822 B2 JP S6149822B2 JP 53087988 A JP53087988 A JP 53087988A JP 8798878 A JP8798878 A JP 8798878A JP S6149822 B2 JPS6149822 B2 JP S6149822B2
Authority
JP
Japan
Prior art keywords
gate
main electrode
region
imaging device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53087988A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5515229A (en
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP8798878A priority Critical patent/JPS5515229A/ja
Priority to US06/039,445 priority patent/US4427990A/en
Publication of JPS5515229A publication Critical patent/JPS5515229A/ja
Publication of JPS6149822B2 publication Critical patent/JPS6149822B2/ja
Priority to US07/332,441 priority patent/US5019876A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Junction Field-Effect Transistors (AREA)
JP8798878A 1978-07-14 1978-07-18 Semiconductor photograph device Granted JPS5515229A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8798878A JPS5515229A (en) 1978-07-18 1978-07-18 Semiconductor photograph device
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8798878A JPS5515229A (en) 1978-07-18 1978-07-18 Semiconductor photograph device

Publications (2)

Publication Number Publication Date
JPS5515229A JPS5515229A (en) 1980-02-02
JPS6149822B2 true JPS6149822B2 (enEXAMPLES) 1986-10-31

Family

ID=13930187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8798878A Granted JPS5515229A (en) 1978-07-14 1978-07-18 Semiconductor photograph device

Country Status (1)

Country Link
JP (1) JPS5515229A (enEXAMPLES)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS58105672A (ja) * 1981-12-17 1983-06-23 Fuji Photo Film Co Ltd 半導体撮像装置
JPS58112867U (ja) * 1982-01-26 1983-08-02 カルソニックカンセイ株式会社 熱交換器
JPS5945781A (ja) * 1982-09-09 1984-03-14 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59107569A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 一次元半導体撮像装置
JPS59108463A (ja) 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59108462A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 静電誘導トランジスタを具える固体撮像素子
JPS59108346A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa 固体撮像装置の製造方法
JPS59108464A (ja) 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59108344A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
JPS59108468A (ja) 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59108461A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59108460A (ja) 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
JPS59158551A (ja) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置及びその駆動方法
JPS59158680A (ja) * 1983-03-01 1984-09-08 Junichi Nishizawa 固体撮像装置
JPS6012760A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置及び光電変換方法
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS60105272A (ja) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd 固体撮像装置
JPS60140752A (ja) * 1983-12-28 1985-07-25 Olympus Optical Co Ltd 半導体光電変換装置
JPH0831991B2 (ja) 1984-04-17 1996-03-27 オリンパス光学工業株式会社 固体撮像装置
JPS6312161A (ja) * 1986-07-03 1988-01-19 Olympus Optical Co Ltd 半導体撮像装置
JPH0340574A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JPH0340570A (ja) * 1990-07-02 1991-02-21 Canon Inc 光トランジスタのリフレッシュ方法
JPH0340467A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置

Also Published As

Publication number Publication date
JPS5515229A (en) 1980-02-02

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