JPS61226745A - 半導体集積回路製造用のスピンコート用レジスト組成物 - Google Patents
半導体集積回路製造用のスピンコート用レジスト組成物Info
- Publication number
- JPS61226745A JPS61226745A JP6498685A JP6498685A JPS61226745A JP S61226745 A JPS61226745 A JP S61226745A JP 6498685 A JP6498685 A JP 6498685A JP 6498685 A JP6498685 A JP 6498685A JP S61226745 A JPS61226745 A JP S61226745A
- Authority
- JP
- Japan
- Prior art keywords
- meth
- polymer
- resist
- radiation
- acrylate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 21
- 239000000203 mixture Substances 0.000 title claims description 24
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims abstract description 8
- 125000002947 alkylene group Chemical group 0.000 claims abstract description 6
- 229920000058 polyacrylate Polymers 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 abstract description 8
- 239000000178 monomer Substances 0.000 abstract description 4
- 239000007787 solid Substances 0.000 abstract description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 abstract 3
- -1 benzoquinonediazide sulfonic acid ester Chemical class 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 10
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229920003986 novolac Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 4
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- ZRYCRPNCXLQHPN-UHFFFAOYSA-N 3-hydroxy-2-methylbenzaldehyde Chemical compound CC1=C(O)C=CC=C1C=O ZRYCRPNCXLQHPN-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- SESFRYSPDFLNCH-UHFFFAOYSA-N benzyl benzoate Chemical compound C=1C=CC=CC=1C(=O)OCC1=CC=CC=C1 SESFRYSPDFLNCH-UHFFFAOYSA-N 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- FHBXQJDYHHJCIF-UHFFFAOYSA-N (2,3-diaminophenyl)-phenylmethanone Chemical compound NC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1N FHBXQJDYHHJCIF-UHFFFAOYSA-N 0.000 description 1
- PJMXUSNWBKGQEZ-UHFFFAOYSA-N (4-hydroxyphenyl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1=CC=C(O)C=C1 PJMXUSNWBKGQEZ-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- BTLXPCBPYBNQNR-UHFFFAOYSA-N 1-Hydroxyanthraquinone Natural products O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2O BTLXPCBPYBNQNR-UHFFFAOYSA-N 0.000 description 1
- BPIUIOXAFBGMNB-UHFFFAOYSA-N 1-hexoxyhexane Chemical compound CCCCCCOCCCCCC BPIUIOXAFBGMNB-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- BLPUXJIIRIWMSQ-QPJJXVBHSA-N 2-[(e)-3-phenylprop-2-enylidene]propanedioic acid Chemical compound OC(=O)C(C(O)=O)=C\C=C\C1=CC=CC=C1 BLPUXJIIRIWMSQ-QPJJXVBHSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical group OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- NSQOMIFJKCLCNL-UHFFFAOYSA-N 3-(2-azidophenyl)-1-phenylprop-2-en-1-one Chemical class [N-]=[N+]=NC1=CC=CC=C1C=CC(=O)C1=CC=CC=C1 NSQOMIFJKCLCNL-UHFFFAOYSA-N 0.000 description 1
- UNDXPKDBFOOQFC-UHFFFAOYSA-N 4-[2-nitro-4-(trifluoromethyl)phenyl]morpholine Chemical compound [O-][N+](=O)C1=CC(C(F)(F)F)=CC=C1N1CCOCC1 UNDXPKDBFOOQFC-UHFFFAOYSA-N 0.000 description 1
- LZDOYVMSNJBLIM-UHFFFAOYSA-N 4-tert-butylphenol;formaldehyde Chemical compound O=C.CC(C)(C)C1=CC=C(O)C=C1 LZDOYVMSNJBLIM-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- IEPRKVQEAMIZSS-UHFFFAOYSA-N Di-Et ester-Fumaric acid Natural products CCOC(=O)C=CC(=O)OCC IEPRKVQEAMIZSS-UHFFFAOYSA-N 0.000 description 1
- IEPRKVQEAMIZSS-WAYWQWQTSA-N Diethyl maleate Chemical compound CCOC(=O)\C=C/C(=O)OCC IEPRKVQEAMIZSS-WAYWQWQTSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical group CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical class OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229920001800 Shellac Polymers 0.000 description 1
- 206010040925 Skin striae Diseases 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- LEEBETSNAGEFCY-UHFFFAOYSA-N [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].O=C1C=CC(=O)C=C1 LEEBETSNAGEFCY-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-XPULMUKRSA-N acetaldehyde Chemical compound [14CH]([14CH3])=O IKHGUXGNUITLKF-XPULMUKRSA-N 0.000 description 1
- SWTCCCJQNPGXLQ-UHFFFAOYSA-N acetaldehyde di-n-butyl acetal Natural products CCCCOC(C)OCCCC SWTCCCJQNPGXLQ-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- HRBFQSUTUDRTSV-UHFFFAOYSA-N benzene-1,2,3-triol;propan-2-one Chemical compound CC(C)=O.OC1=CC=CC(O)=C1O HRBFQSUTUDRTSV-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 229960002903 benzyl benzoate Drugs 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 235000010980 cellulose Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- GCFAUZGWPDYAJN-UHFFFAOYSA-N cyclohexyl 3-phenylprop-2-enoate Chemical compound C=1C=CC=CC=1C=CC(=O)OC1CCCCC1 GCFAUZGWPDYAJN-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LDCRTTXIJACKKU-ARJAWSKDSA-N dimethyl maleate Chemical compound COC(=O)\C=C/C(=O)OC LDCRTTXIJACKKU-ARJAWSKDSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- FHTQCUNSKSWOHF-UHFFFAOYSA-N ethyl carbamate;silicon Chemical compound [Si].CCOC(N)=O FHTQCUNSKSWOHF-UHFFFAOYSA-N 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 235000021190 leftovers Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- XZSZONUJSGDIFI-UHFFFAOYSA-N n-(4-hydroxyphenyl)-2-methylprop-2-enamide Chemical compound CC(=C)C(=O)NC1=CC=C(O)C=C1 XZSZONUJSGDIFI-UHFFFAOYSA-N 0.000 description 1
- POVITWJTUUJBNK-UHFFFAOYSA-N n-(4-hydroxyphenyl)prop-2-enamide Chemical compound OC1=CC=C(NC(=O)C=C)C=C1 POVITWJTUUJBNK-UHFFFAOYSA-N 0.000 description 1
- 239000000025 natural resin Substances 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- ZLGIYFNHBLSMPS-ATJNOEHPSA-N shellac Chemical compound OCCCCCC(O)C(O)CCCCCCCC(O)=O.C1C23[C@H](C(O)=O)CCC2[C@](C)(CO)[C@@H]1C(C(O)=O)=C[C@@H]3O ZLGIYFNHBLSMPS-ATJNOEHPSA-N 0.000 description 1
- 239000004208 shellac Substances 0.000 description 1
- 229940113147 shellac Drugs 0.000 description 1
- 235000013874 shellac Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6498685A JPS61226745A (ja) | 1985-03-30 | 1985-03-30 | 半導体集積回路製造用のスピンコート用レジスト組成物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6498685A JPS61226745A (ja) | 1985-03-30 | 1985-03-30 | 半導体集積回路製造用のスピンコート用レジスト組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61226745A true JPS61226745A (ja) | 1986-10-08 |
JPH0558189B2 JPH0558189B2 (enrdf_load_stackoverflow) | 1993-08-25 |
Family
ID=13273883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6498685A Granted JPS61226745A (ja) | 1985-03-30 | 1985-03-30 | 半導体集積回路製造用のスピンコート用レジスト組成物 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61226745A (enrdf_load_stackoverflow) |
Cited By (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63136039A (ja) * | 1986-11-28 | 1988-06-08 | Fuji Photo Film Co Ltd | 感光性組成物 |
JPS63218949A (ja) * | 1987-03-06 | 1988-09-12 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
EP1522891A1 (en) | 2003-10-08 | 2005-04-13 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
EP1621931A1 (en) | 2004-07-08 | 2006-02-01 | Fuji Photo Film Co., Ltd. | Protective film-forming composition for immersion exposure and pattern-forming method using the same |
EP1628159A2 (en) | 2004-08-18 | 2006-02-22 | Fuji Photo Film Co., Ltd. | Chemical amplification resist composition and pattern-forming method using the same |
EP1630610A1 (en) | 2004-08-11 | 2006-03-01 | Fuji Photo Film Co., Ltd. | Protective film-forming composition for immersion exposure and pattern forming method using the same |
EP1635218A2 (en) | 2004-09-14 | 2006-03-15 | Fuji Photo Film Co., Ltd. | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition |
EP1637927A1 (en) | 2004-09-02 | 2006-03-22 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
EP1662317A2 (en) | 2004-09-30 | 2006-05-31 | Fuji Photo Film Co., Ltd. | Resist composition and method of pattern formation with the same |
EP1684119A2 (en) | 2005-01-24 | 2006-07-26 | Fuji Photo Film Co., Ltd. | Positive resist composition for immersion exposure and pattern-forming method using the same |
EP1684116A2 (en) | 2005-01-24 | 2006-07-26 | Fuji Photo Film Co., Ltd. | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition |
EP1688791A2 (en) | 2005-01-28 | 2006-08-09 | Fuji Photo Film Co., Ltd. | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition |
EP1693704A2 (en) | 2005-02-02 | 2006-08-23 | Fuji Photo Film Co., Ltd. | Resist composition and pattern forming method using the same |
EP1698937A2 (en) | 2005-03-04 | 2006-09-06 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern-forming method using the same |
EP1701214A1 (en) | 2005-03-11 | 2006-09-13 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and pattern-forming method using the same |
EP1703322A2 (en) | 2005-03-17 | 2006-09-20 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the resist composition |
JP2006274200A (ja) * | 2005-03-30 | 2006-10-12 | Fuji Photo Film Co Ltd | インク組成物、並びに、これを用いた画像形成方法および記録物 |
EP1720072A1 (en) | 2005-05-01 | 2006-11-08 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
EP1755000A2 (en) | 2005-08-16 | 2007-02-21 | Fuji Photo Film Co., Ltd. | Positive resist composition and a pattern forming method using the same |
EP1764647A2 (en) | 2005-08-19 | 2007-03-21 | FUJIFILM Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
EP1925979A1 (en) | 2006-11-21 | 2008-05-28 | FUJIFILM Corporation | Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition |
EP1939691A2 (en) | 2006-12-25 | 2008-07-02 | FUJIFILM Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
EP1959300A1 (en) | 2007-02-14 | 2008-08-20 | FUJIFILM Corporation | Resist composition and pattern forming method using the same |
EP1962139A1 (en) | 2007-02-23 | 2008-08-27 | FUJIFILM Corporation | Negative resist composition and pattern forming method using the same |
EP1972641A2 (en) | 2007-03-23 | 2008-09-24 | FUJIFILM Corporation | Resist composition and pattern-forming method using same |
EP1975712A2 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method using the same |
EP1975718A2 (en) | 2007-03-26 | 2008-10-01 | FUJIFILM Corporation | Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent |
EP1975714A1 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
EP1975717A2 (en) | 2007-03-30 | 2008-10-01 | FUJIFILM Corporation | Positive resist compostion and pattern forming method using the same |
EP1975715A2 (en) | 2007-03-30 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method using the same |
EP1975716A2 (en) | 2007-03-28 | 2008-10-01 | Fujifilm Corporation | Positive resist composition and pattern forming method |
EP1975713A2 (en) | 2007-03-27 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method using the same |
EP1980911A2 (en) | 2007-04-13 | 2008-10-15 | FUJIFILM Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
WO2008129964A1 (ja) | 2007-04-13 | 2008-10-30 | Fujifilm Corporation | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
EP2003509A2 (en) | 2007-06-15 | 2008-12-17 | FUJIFILM Corporation | Pattern forming method |
EP2003504A2 (en) | 2007-06-12 | 2008-12-17 | FUJIFILM Corporation | Method of forming patterns |
WO2008153155A1 (ja) | 2007-06-15 | 2008-12-18 | Fujifilm Corporation | パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法 |
EP2019334A2 (en) | 2005-07-26 | 2009-01-28 | Fujifilm Corporation | Positive resist composition and method of pattern formation with the same |
EP2020617A2 (en) | 2007-08-03 | 2009-02-04 | FUJIFILM Corporation | Resist composition containing a sulfonium compound, pattern-forming method using the resist composition, and sulfonium compound |
EP2020616A2 (en) | 2007-08-02 | 2009-02-04 | FUJIFILM Corporation | Resist composition for electron beam, x-ray, or euv, and pattern-forming method using the same |
EP2020615A1 (en) | 2007-07-30 | 2009-02-04 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
WO2009022561A1 (ja) | 2007-08-10 | 2009-02-19 | Fujifilm Corporation | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
EP2034361A2 (en) | 2005-05-23 | 2009-03-11 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition |
EP2040122A2 (en) | 2005-09-13 | 2009-03-25 | Fujifilm Corporation | Positive resist composition and pattern-forming method using the same |
WO2009038148A1 (ja) | 2007-09-21 | 2009-03-26 | Fujifilm Corporation | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
EP2042925A2 (en) | 2007-09-28 | 2009-04-01 | FUJIFILM Corporation | Resist composition and pattern-forming method using the same |
EP2062950A2 (en) | 2007-11-14 | 2009-05-27 | FUJIFILM Corporation | Topcoat composition, alkali developer-soluble topcoat film using the composition and pattern forming method using the same |
EP2090932A1 (en) | 2008-02-13 | 2009-08-19 | FUJIFILM Corporation | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same |
EP2105440A2 (en) | 2008-03-26 | 2009-09-30 | FUJIFILM Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound |
EP2141183A1 (en) | 2008-06-30 | 2010-01-06 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same |
EP2141544A1 (en) | 2008-06-30 | 2010-01-06 | Fujifilm Corporation | Photosensitive composition and pattern forming method using same |
EP2143711A1 (en) | 2008-07-09 | 2010-01-13 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same |
EP2145931A1 (en) | 2008-07-16 | 2010-01-20 | Fujifilm Corporation | Photo-curable composition, ink composition, and inkjet recording method using the ink composition |
WO2010035894A1 (en) | 2008-09-26 | 2010-04-01 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern forming method |
WO2010067905A2 (en) | 2008-12-12 | 2010-06-17 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same |
WO2010067898A2 (en) | 2008-12-12 | 2010-06-17 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
WO2010114107A1 (en) | 2009-03-31 | 2010-10-07 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same |
EP2278398A2 (en) | 2002-05-31 | 2011-01-26 | Fujifilm Corporation | Positive-working resist composition |
EP2296039A1 (en) | 2001-07-05 | 2011-03-16 | Fujifilm Corporation | Positive photosensitive composition |
EP2375285A2 (en) | 2004-02-05 | 2011-10-12 | FUJIFILM Corporation | Photosensitive composition and pattern-forming method using the photosensitive composition |
EP2447773A1 (en) | 2010-11-02 | 2012-05-02 | Fujifilm Corporation | Photosensitive resin composition, method for producing pattern, MEMS structure, method for producing the structure, method for dry etching, method for wet etching, MEMS shutter device, and image display apparatus |
EP2477073A1 (en) | 2002-02-13 | 2012-07-18 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
EP2498133A2 (en) | 2011-03-11 | 2012-09-12 | Fujifilm Corporation | Resin pattern, method for producing the pattern, method for producing MEMS structure, method for manufacturing semiconductor device, and method for producing plated pattern |
WO2013073582A1 (ja) | 2011-11-18 | 2013-05-23 | 三菱瓦斯化学株式会社 | 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法 |
WO2013073583A1 (ja) | 2011-11-18 | 2013-05-23 | 三菱瓦斯化学株式会社 | 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法 |
WO2014061710A1 (ja) | 2012-10-17 | 2014-04-24 | 三菱瓦斯化学株式会社 | レジスト組成物 |
WO2014069245A1 (ja) | 2012-10-31 | 2014-05-08 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液、及び、化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法、電子デバイスの製造方法、及び、電子デバイス |
WO2014123032A1 (ja) | 2013-02-08 | 2014-08-14 | 三菱瓦斯化学株式会社 | レジスト組成物、レジストパターン形成方法及びそれに用いるポリフェノール誘導体 |
WO2014196425A1 (ja) | 2013-06-07 | 2014-12-11 | 三菱瓦斯化学株式会社 | レジスト組成物 |
WO2015025949A1 (ja) | 2013-08-23 | 2015-02-26 | 富士フイルム株式会社 | 積層体 |
WO2015064602A1 (ja) | 2013-10-31 | 2015-05-07 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
WO2015116657A1 (en) | 2014-01-31 | 2015-08-06 | Fujifilm Electronic Materials U.S.A., Inc. | Novel polyimide compositions |
EP3051350A2 (en) | 2011-08-12 | 2016-08-03 | Mitsubishi Gas Chemical Company, Inc. | Alcoholic compound and method for producing alcoholic compound |
WO2016172089A1 (en) | 2015-04-21 | 2016-10-27 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive polyimide compositions |
WO2017023677A1 (en) | 2015-08-03 | 2017-02-09 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning composition |
WO2018062408A1 (ja) | 2016-09-30 | 2018-04-05 | 富士フイルム株式会社 | 積層体および半導体素子の製造方法 |
WO2018080870A1 (en) | 2016-10-25 | 2018-05-03 | Fujifilm Electronic Materials U.S.A., Inc. | Polyimides |
WO2018093827A1 (en) | 2016-11-17 | 2018-05-24 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping process |
WO2018155495A1 (ja) | 2017-02-23 | 2018-08-30 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、パターン形成方法及び精製方法 |
WO2018181882A1 (ja) | 2017-03-31 | 2018-10-04 | 学校法人関西大学 | レジスト組成物及びそれを用いるパターン形成方法、並びに、化合物及び樹脂 |
WO2018181872A1 (ja) | 2017-03-31 | 2018-10-04 | 学校法人関西大学 | 化合物、化合物を含むレジスト組成物及びそれを用いるパターン形成方法 |
WO2019004142A1 (ja) | 2017-06-28 | 2019-01-03 | 三菱瓦斯化学株式会社 | 膜形成材料、リソグラフィー用膜形成用組成物、光学部品形成用材料、レジスト組成物、レジストパターン形成方法、レジスト用永久膜、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法 |
WO2019050566A1 (en) | 2017-09-11 | 2019-03-14 | Fujifilm Electronic Materials U.S.A., Inc. | DIELECTRIC FILMOGENEOUS COMPOSITION |
WO2019066000A1 (ja) | 2017-09-29 | 2019-04-04 | 学校法人関西大学 | リソグラフィー用組成物、パターン形成方法、及び化合物 |
WO2019098338A1 (ja) | 2017-11-20 | 2019-05-23 | 三菱瓦斯化学株式会社 | リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法 |
WO2019142897A1 (ja) | 2018-01-22 | 2019-07-25 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物及びパターン形成方法 |
WO2019151403A1 (ja) | 2018-01-31 | 2019-08-08 | 三菱瓦斯化学株式会社 | 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
WO2019151400A1 (ja) | 2018-01-31 | 2019-08-08 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、レジストパターン形成方法、回路パターン形成方法及び樹脂の精製方法 |
EP3537217A2 (en) | 2005-12-09 | 2019-09-11 | FUJIFILM Corporation | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
WO2020040162A1 (ja) | 2018-08-24 | 2020-02-27 | 三菱瓦斯化学株式会社 | 化合物、及びそれを含む組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
WO2021065450A1 (ja) | 2019-09-30 | 2021-04-08 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 |
WO2021146033A1 (en) | 2020-01-16 | 2021-07-22 | Fujifilm Electronic Materials U.S.A., Inc. | Dry film |
WO2021200179A1 (ja) | 2020-03-31 | 2021-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 |
WO2021200056A1 (ja) | 2020-03-30 | 2021-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、フォトマスク製造用感活性光線性又は感放射線性樹脂組成物、及びフォトマスクの製造方法 |
WO2022045278A1 (ja) | 2020-08-27 | 2022-03-03 | 富士フイルム株式会社 | 加工された基材の製造方法、半導体素子の製造方法、及び、仮接着剤層形成用組成物 |
WO2022050313A1 (ja) | 2020-09-04 | 2022-03-10 | 富士フイルム株式会社 | 有機層パターンの製造方法、及び、半導体デバイスの製造方法 |
US11721543B2 (en) | 2019-10-04 | 2023-08-08 | Fujifilm Electronic Materials U.S.A., Inc. | Planarizing process and composition |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54135004A (en) * | 1978-04-10 | 1979-10-19 | Fuji Photo Film Co Ltd | Photosensitive flat printing plate |
JPS5740249A (en) * | 1980-06-14 | 1982-03-05 | Hoechst Ag | Photographic copying material and method of coating photosensitive copying layer on support |
JPS585734A (ja) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | 基板上にパタ−ンが形成されたレジスト被膜を製造する方法 |
JPS58105143A (ja) * | 1981-12-17 | 1983-06-22 | Kanto Kagaku Kk | ポジ型フオトレジスト組成物 |
JPS59137943A (ja) * | 1983-01-28 | 1984-08-08 | W R Gureesu:Kk | 感光性樹脂組成物 |
JPS59155836A (ja) * | 1983-02-24 | 1984-09-05 | Tokyo Ohka Kogyo Co Ltd | 感光性組成物 |
-
1985
- 1985-03-30 JP JP6498685A patent/JPS61226745A/ja active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54135004A (en) * | 1978-04-10 | 1979-10-19 | Fuji Photo Film Co Ltd | Photosensitive flat printing plate |
JPS5740249A (en) * | 1980-06-14 | 1982-03-05 | Hoechst Ag | Photographic copying material and method of coating photosensitive copying layer on support |
JPS585734A (ja) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | 基板上にパタ−ンが形成されたレジスト被膜を製造する方法 |
JPS58105143A (ja) * | 1981-12-17 | 1983-06-22 | Kanto Kagaku Kk | ポジ型フオトレジスト組成物 |
JPS59137943A (ja) * | 1983-01-28 | 1984-08-08 | W R Gureesu:Kk | 感光性樹脂組成物 |
JPS59155836A (ja) * | 1983-02-24 | 1984-09-05 | Tokyo Ohka Kogyo Co Ltd | 感光性組成物 |
Cited By (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63136039A (ja) * | 1986-11-28 | 1988-06-08 | Fuji Photo Film Co Ltd | 感光性組成物 |
JPS63218949A (ja) * | 1987-03-06 | 1988-09-12 | Sumitomo Chem Co Ltd | ポジ型レジスト組成物 |
EP2296039A1 (en) | 2001-07-05 | 2011-03-16 | Fujifilm Corporation | Positive photosensitive composition |
EP2296040A1 (en) | 2001-07-05 | 2011-03-16 | Fujifilm Corporation | Positive photosensitive composition |
EP2477073A1 (en) | 2002-02-13 | 2012-07-18 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
EP2278398A2 (en) | 2002-05-31 | 2011-01-26 | Fujifilm Corporation | Positive-working resist composition |
EP2278399A2 (en) | 2002-05-31 | 2011-01-26 | Fujifilm Corporation | Positive-working resist composition |
EP1522891A1 (en) | 2003-10-08 | 2005-04-13 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
EP2375285A2 (en) | 2004-02-05 | 2011-10-12 | FUJIFILM Corporation | Photosensitive composition and pattern-forming method using the photosensitive composition |
EP1621931A1 (en) | 2004-07-08 | 2006-02-01 | Fuji Photo Film Co., Ltd. | Protective film-forming composition for immersion exposure and pattern-forming method using the same |
EP1630610A1 (en) | 2004-08-11 | 2006-03-01 | Fuji Photo Film Co., Ltd. | Protective film-forming composition for immersion exposure and pattern forming method using the same |
EP1628159A2 (en) | 2004-08-18 | 2006-02-22 | Fuji Photo Film Co., Ltd. | Chemical amplification resist composition and pattern-forming method using the same |
EP2031445A2 (en) | 2004-08-18 | 2009-03-04 | FUJIFILM Corporation | Chemical amplification resist composition and pattern-forming method using the same |
EP1637927A1 (en) | 2004-09-02 | 2006-03-22 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
EP1635218A2 (en) | 2004-09-14 | 2006-03-15 | Fuji Photo Film Co., Ltd. | Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition |
EP1662317A2 (en) | 2004-09-30 | 2006-05-31 | Fuji Photo Film Co., Ltd. | Resist composition and method of pattern formation with the same |
EP1684119A2 (en) | 2005-01-24 | 2006-07-26 | Fuji Photo Film Co., Ltd. | Positive resist composition for immersion exposure and pattern-forming method using the same |
EP1684116A2 (en) | 2005-01-24 | 2006-07-26 | Fuji Photo Film Co., Ltd. | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition |
EP1688791A2 (en) | 2005-01-28 | 2006-08-09 | Fuji Photo Film Co., Ltd. | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition |
EP1693704A2 (en) | 2005-02-02 | 2006-08-23 | Fuji Photo Film Co., Ltd. | Resist composition and pattern forming method using the same |
EP1698937A2 (en) | 2005-03-04 | 2006-09-06 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern-forming method using the same |
EP1701214A1 (en) | 2005-03-11 | 2006-09-13 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and pattern-forming method using the same |
EP1703322A2 (en) | 2005-03-17 | 2006-09-20 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the resist composition |
JP2006274200A (ja) * | 2005-03-30 | 2006-10-12 | Fuji Photo Film Co Ltd | インク組成物、並びに、これを用いた画像形成方法および記録物 |
EP1720072A1 (en) | 2005-05-01 | 2006-11-08 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
EP2034361A2 (en) | 2005-05-23 | 2009-03-11 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition |
EP2020618A2 (en) | 2005-07-26 | 2009-02-04 | Fujifilm Corporation | Positive resist composition and method of pattern formation with the same |
EP2019334A2 (en) | 2005-07-26 | 2009-01-28 | Fujifilm Corporation | Positive resist composition and method of pattern formation with the same |
EP1755000A2 (en) | 2005-08-16 | 2007-02-21 | Fuji Photo Film Co., Ltd. | Positive resist composition and a pattern forming method using the same |
EP1764647A2 (en) | 2005-08-19 | 2007-03-21 | FUJIFILM Corporation | Positive resist composition for immersion exposure and pattern-forming method using the same |
EP2040122A2 (en) | 2005-09-13 | 2009-03-25 | Fujifilm Corporation | Positive resist composition and pattern-forming method using the same |
EP3537217A2 (en) | 2005-12-09 | 2019-09-11 | FUJIFILM Corporation | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
EP1925979A1 (en) | 2006-11-21 | 2008-05-28 | FUJIFILM Corporation | Positive photosensitive composition, polymer compound used for the positive photosensitive composition, production method of the polymer compound, and pattern forming method using the positive photosensitive composition |
EP2413195A2 (en) | 2006-12-25 | 2012-02-01 | Fujifilm Corporation | Pattern forming method |
EP2413194A2 (en) | 2006-12-25 | 2012-02-01 | Fujifilm Corporation | Pattern forming method |
EP1939691A2 (en) | 2006-12-25 | 2008-07-02 | FUJIFILM Corporation | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
EP2535771A1 (en) | 2006-12-25 | 2012-12-19 | Fujifilm Corporation | Pattern forming method |
EP1959300A1 (en) | 2007-02-14 | 2008-08-20 | FUJIFILM Corporation | Resist composition and pattern forming method using the same |
EP1962139A1 (en) | 2007-02-23 | 2008-08-27 | FUJIFILM Corporation | Negative resist composition and pattern forming method using the same |
EP1972641A2 (en) | 2007-03-23 | 2008-09-24 | FUJIFILM Corporation | Resist composition and pattern-forming method using same |
EP1975718A2 (en) | 2007-03-26 | 2008-10-01 | FUJIFILM Corporation | Surface-treating agent for pattern formation and pattern-forming method using the surface-treating agent |
EP1975713A2 (en) | 2007-03-27 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method using the same |
EP1975712A2 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method using the same |
EP1975714A1 (en) | 2007-03-28 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
EP1975716A2 (en) | 2007-03-28 | 2008-10-01 | Fujifilm Corporation | Positive resist composition and pattern forming method |
EP1975717A2 (en) | 2007-03-30 | 2008-10-01 | FUJIFILM Corporation | Positive resist compostion and pattern forming method using the same |
EP1975715A2 (en) | 2007-03-30 | 2008-10-01 | FUJIFILM Corporation | Positive resist composition and pattern forming method using the same |
EP1980911A2 (en) | 2007-04-13 | 2008-10-15 | FUJIFILM Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
WO2008129964A1 (ja) | 2007-04-13 | 2008-10-30 | Fujifilm Corporation | パターン形成方法、該パターン形成方法に用いられるレジスト組成物、現像液及びリンス液 |
EP2579098A1 (en) | 2007-06-12 | 2013-04-10 | Fujifilm Corporation | Method of forming patterns |
EP2003504A2 (en) | 2007-06-12 | 2008-12-17 | FUJIFILM Corporation | Method of forming patterns |
EP2003509A2 (en) | 2007-06-15 | 2008-12-17 | FUJIFILM Corporation | Pattern forming method |
WO2008153155A1 (ja) | 2007-06-15 | 2008-12-18 | Fujifilm Corporation | パターン形成用表面処理剤、及び該処理剤を用いたパターン形成方法 |
EP2020615A1 (en) | 2007-07-30 | 2009-02-04 | FUJIFILM Corporation | Positive resist composition and pattern forming method |
EP2020616A2 (en) | 2007-08-02 | 2009-02-04 | FUJIFILM Corporation | Resist composition for electron beam, x-ray, or euv, and pattern-forming method using the same |
EP2020617A2 (en) | 2007-08-03 | 2009-02-04 | FUJIFILM Corporation | Resist composition containing a sulfonium compound, pattern-forming method using the resist composition, and sulfonium compound |
WO2009022561A1 (ja) | 2007-08-10 | 2009-02-19 | Fujifilm Corporation | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
WO2009038148A1 (ja) | 2007-09-21 | 2009-03-26 | Fujifilm Corporation | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
EP2426154A1 (en) | 2007-09-21 | 2012-03-07 | Fujifilm Corporation | Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition |
EP2042925A2 (en) | 2007-09-28 | 2009-04-01 | FUJIFILM Corporation | Resist composition and pattern-forming method using the same |
EP2062950A2 (en) | 2007-11-14 | 2009-05-27 | FUJIFILM Corporation | Topcoat composition, alkali developer-soluble topcoat film using the composition and pattern forming method using the same |
EP2090932A1 (en) | 2008-02-13 | 2009-08-19 | FUJIFILM Corporation | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same |
EP2105440A2 (en) | 2008-03-26 | 2009-09-30 | FUJIFILM Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound |
EP2468742A1 (en) | 2008-03-26 | 2012-06-27 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound |
EP2141544A1 (en) | 2008-06-30 | 2010-01-06 | Fujifilm Corporation | Photosensitive composition and pattern forming method using same |
EP2141183A1 (en) | 2008-06-30 | 2010-01-06 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same |
EP2143711A1 (en) | 2008-07-09 | 2010-01-13 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using same |
EP2145931A1 (en) | 2008-07-16 | 2010-01-20 | Fujifilm Corporation | Photo-curable composition, ink composition, and inkjet recording method using the ink composition |
WO2010035894A1 (en) | 2008-09-26 | 2010-04-01 | Fujifilm Corporation | Positive resist composition for immersion exposure and pattern forming method |
WO2010067898A2 (en) | 2008-12-12 | 2010-06-17 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the composition |
WO2010067905A2 (en) | 2008-12-12 | 2010-06-17 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same |
WO2010114107A1 (en) | 2009-03-31 | 2010-10-07 | Fujifilm Corporation | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same |
EP2447773A1 (en) | 2010-11-02 | 2012-05-02 | Fujifilm Corporation | Photosensitive resin composition, method for producing pattern, MEMS structure, method for producing the structure, method for dry etching, method for wet etching, MEMS shutter device, and image display apparatus |
EP2498133A2 (en) | 2011-03-11 | 2012-09-12 | Fujifilm Corporation | Resin pattern, method for producing the pattern, method for producing MEMS structure, method for manufacturing semiconductor device, and method for producing plated pattern |
EP3051350A2 (en) | 2011-08-12 | 2016-08-03 | Mitsubishi Gas Chemical Company, Inc. | Alcoholic compound and method for producing alcoholic compound |
EP3062151A1 (en) | 2011-08-12 | 2016-08-31 | Mitsubishi Gas Chemical Company, Inc. | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom |
WO2013073582A1 (ja) | 2011-11-18 | 2013-05-23 | 三菱瓦斯化学株式会社 | 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法 |
WO2013073583A1 (ja) | 2011-11-18 | 2013-05-23 | 三菱瓦斯化学株式会社 | 環状化合物、その製造方法、感放射線性組成物及びレジストパターン形成方法 |
WO2014061710A1 (ja) | 2012-10-17 | 2014-04-24 | 三菱瓦斯化学株式会社 | レジスト組成物 |
WO2014069245A1 (ja) | 2012-10-31 | 2014-05-08 | 富士フイルム株式会社 | 化学増幅型レジスト膜のパターニング用有機系処理液、及び、化学増幅型レジスト膜のパターニング用有機系処理液の収容容器、並びに、これらを使用したパターン形成方法、電子デバイスの製造方法、及び、電子デバイス |
WO2014123032A1 (ja) | 2013-02-08 | 2014-08-14 | 三菱瓦斯化学株式会社 | レジスト組成物、レジストパターン形成方法及びそれに用いるポリフェノール誘導体 |
WO2014196425A1 (ja) | 2013-06-07 | 2014-12-11 | 三菱瓦斯化学株式会社 | レジスト組成物 |
WO2015025949A1 (ja) | 2013-08-23 | 2015-02-26 | 富士フイルム株式会社 | 積層体 |
WO2015064602A1 (ja) | 2013-10-31 | 2015-05-07 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
WO2015116657A1 (en) | 2014-01-31 | 2015-08-06 | Fujifilm Electronic Materials U.S.A., Inc. | Novel polyimide compositions |
WO2016172089A1 (en) | 2015-04-21 | 2016-10-27 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive polyimide compositions |
WO2017023677A1 (en) | 2015-08-03 | 2017-02-09 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning composition |
WO2018062408A1 (ja) | 2016-09-30 | 2018-04-05 | 富士フイルム株式会社 | 積層体および半導体素子の製造方法 |
WO2018080870A1 (en) | 2016-10-25 | 2018-05-03 | Fujifilm Electronic Materials U.S.A., Inc. | Polyimides |
WO2018093827A1 (en) | 2016-11-17 | 2018-05-24 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping process |
WO2018155495A1 (ja) | 2017-02-23 | 2018-08-30 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、パターン形成方法及び精製方法 |
WO2018181882A1 (ja) | 2017-03-31 | 2018-10-04 | 学校法人関西大学 | レジスト組成物及びそれを用いるパターン形成方法、並びに、化合物及び樹脂 |
WO2018181872A1 (ja) | 2017-03-31 | 2018-10-04 | 学校法人関西大学 | 化合物、化合物を含むレジスト組成物及びそれを用いるパターン形成方法 |
WO2019004142A1 (ja) | 2017-06-28 | 2019-01-03 | 三菱瓦斯化学株式会社 | 膜形成材料、リソグラフィー用膜形成用組成物、光学部品形成用材料、レジスト組成物、レジストパターン形成方法、レジスト用永久膜、感放射線性組成物、アモルファス膜の製造方法、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜の製造方法及び回路パターン形成方法 |
WO2019050566A1 (en) | 2017-09-11 | 2019-03-14 | Fujifilm Electronic Materials U.S.A., Inc. | DIELECTRIC FILMOGENEOUS COMPOSITION |
WO2019066000A1 (ja) | 2017-09-29 | 2019-04-04 | 学校法人関西大学 | リソグラフィー用組成物、パターン形成方法、及び化合物 |
WO2019098338A1 (ja) | 2017-11-20 | 2019-05-23 | 三菱瓦斯化学株式会社 | リソグラフィー用膜形成用組成物、リソグラフィー用膜、レジストパターン形成方法、及び回路パターン形成方法 |
WO2019142897A1 (ja) | 2018-01-22 | 2019-07-25 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物及びパターン形成方法 |
WO2019151400A1 (ja) | 2018-01-31 | 2019-08-08 | 三菱瓦斯化学株式会社 | 化合物、樹脂、組成物、レジストパターン形成方法、回路パターン形成方法及び樹脂の精製方法 |
WO2019151403A1 (ja) | 2018-01-31 | 2019-08-08 | 三菱瓦斯化学株式会社 | 組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
WO2020040162A1 (ja) | 2018-08-24 | 2020-02-27 | 三菱瓦斯化学株式会社 | 化合物、及びそれを含む組成物、並びに、レジストパターンの形成方法及び絶縁膜の形成方法 |
WO2021065450A1 (ja) | 2019-09-30 | 2021-04-08 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 |
US11721543B2 (en) | 2019-10-04 | 2023-08-08 | Fujifilm Electronic Materials U.S.A., Inc. | Planarizing process and composition |
WO2021146033A1 (en) | 2020-01-16 | 2021-07-22 | Fujifilm Electronic Materials U.S.A., Inc. | Dry film |
WO2021200056A1 (ja) | 2020-03-30 | 2021-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、フォトマスク製造用感活性光線性又は感放射線性樹脂組成物、及びフォトマスクの製造方法 |
WO2021200179A1 (ja) | 2020-03-31 | 2021-10-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法 |
WO2022045278A1 (ja) | 2020-08-27 | 2022-03-03 | 富士フイルム株式会社 | 加工された基材の製造方法、半導体素子の製造方法、及び、仮接着剤層形成用組成物 |
WO2022050313A1 (ja) | 2020-09-04 | 2022-03-10 | 富士フイルム株式会社 | 有機層パターンの製造方法、及び、半導体デバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0558189B2 (enrdf_load_stackoverflow) | 1993-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS61226745A (ja) | 半導体集積回路製造用のスピンコート用レジスト組成物 | |
JPS61226746A (ja) | 半導体集積回路製造用のスピンコート用レジスト組成物 | |
US4725523A (en) | Positive photosensitive compositions with 1,2-naphthoquinone diazide and novolak resin prepared from α-naphthol and p-cresol | |
JP3112229B2 (ja) | ポジ型ホトレジスト組成物 | |
US4550069A (en) | Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate | |
EP0126266B1 (en) | Low striation positive resist composition | |
JPH095988A (ja) | 感放射線性塗布組成物 | |
JPS6334540A (ja) | ポジ型フオトレジスト組成物 | |
KR101605451B1 (ko) | 노볼락 수지 블렌드를 포함하는 포토레지스트 | |
JPS6236657A (ja) | 半導体微細加工用レジスト組成物 | |
US7195854B2 (en) | Photoresist composition | |
US5612164A (en) | Positive photoresist composition comprising a mixed ester of trishydroxyphenyl ethane and a mixed ester of trihydroxybenzophenone | |
JP2005507509A (ja) | 液晶表示装置回路用ポジ型フォトレジスト組成物 | |
KR102127533B1 (ko) | 포지티브형 레지스트 조성물 | |
JP3376222B2 (ja) | 放射線感応性組成物 | |
KR100754232B1 (ko) | 롤 피복용 감광성 수지 조성물 및 롤 피복 방법 | |
JPS59155836A (ja) | 感光性組成物 | |
JP3640290B2 (ja) | ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材 | |
KR102614832B1 (ko) | 감광성 조성물 | |
JP2015215449A (ja) | ポジ型感光性樹脂組成物、この樹脂組成物を用いた撥インク性バンク膜の形成方法、バンク膜を備える有機el用表示装置 | |
CA2065477A1 (en) | Radiation-sensitive composition containing esters of (1,2-naphthoquinone 2-diazide)-sulfonic acid and a radiation-sensitive recording material prepared therewith | |
JPH06116329A (ja) | 化学的に改質されたヒドロキシスチレンポリマー樹脂及び光活性レジスト組成物中でのそれらの使用 | |
US6461785B1 (en) | Composition for positive photoresist | |
US6447975B1 (en) | Composition for positive type photoresist | |
KR100499983B1 (ko) | 포지티브형 포토레지스트 조성물 및 액정표시소자 제조용레지스트패턴의 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |