JPS61222093A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS61222093A
JPS61222093A JP60062103A JP6210385A JPS61222093A JP S61222093 A JPS61222093 A JP S61222093A JP 60062103 A JP60062103 A JP 60062103A JP 6210385 A JP6210385 A JP 6210385A JP S61222093 A JPS61222093 A JP S61222093A
Authority
JP
Japan
Prior art keywords
cell
load
data
transistor
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60062103A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325876B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋　弘
Masamichi Asano
正通 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60062103A priority Critical patent/JPS61222093A/ja
Publication of JPS61222093A publication Critical patent/JPS61222093A/ja
Publication of JPH0325876B2 publication Critical patent/JPH0325876B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP60062103A 1985-03-28 1985-03-28 不揮発性半導体記憶装置 Granted JPS61222093A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062103A JPS61222093A (ja) 1985-03-28 1985-03-28 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062103A JPS61222093A (ja) 1985-03-28 1985-03-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61222093A true JPS61222093A (ja) 1986-10-02
JPH0325876B2 JPH0325876B2 (enrdf_load_stackoverflow) 1991-04-09

Family

ID=13190377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062103A Granted JPS61222093A (ja) 1985-03-28 1985-03-28 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61222093A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JPS6488998A (en) * 1987-09-29 1989-04-03 Toshiba Corp Nonvolatile semiconductor memory
JPH01263997A (ja) * 1988-04-13 1989-10-20 Toshiba Corp 半導体記憶装置
US6233189B1 (en) 1999-06-10 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US6535427B1 (en) 1999-11-12 2003-03-18 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with initialization circuit and control method thereof
WO2004109710A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 隣接セルの状態に依存したテストを可能にした仮想接地型不揮発性メモリ
JP2011159355A (ja) * 2010-02-01 2011-08-18 Sanyo Electric Co Ltd 半導体記憶装置
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
US8437194B2 (en) 2009-10-01 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JPS6488998A (en) * 1987-09-29 1989-04-03 Toshiba Corp Nonvolatile semiconductor memory
JPH01263997A (ja) * 1988-04-13 1989-10-20 Toshiba Corp 半導体記憶装置
US6233189B1 (en) 1999-06-10 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US6337825B2 (en) 1999-06-10 2002-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
US6535427B1 (en) 1999-11-12 2003-03-18 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with initialization circuit and control method thereof
WO2004109710A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 隣接セルの状態に依存したテストを可能にした仮想接地型不揮発性メモリ
US8437194B2 (en) 2009-10-01 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP2011159355A (ja) * 2010-02-01 2011-08-18 Sanyo Electric Co Ltd 半導体記憶装置
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016042407A (ja) * 2010-09-10 2016-03-31 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH0325876B2 (enrdf_load_stackoverflow) 1991-04-09

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Legal Events

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