JPS61222093A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS61222093A
JPS61222093A JP60062103A JP6210385A JPS61222093A JP S61222093 A JPS61222093 A JP S61222093A JP 60062103 A JP60062103 A JP 60062103A JP 6210385 A JP6210385 A JP 6210385A JP S61222093 A JPS61222093 A JP S61222093A
Authority
JP
Japan
Prior art keywords
data
transistor
memory cell
load
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60062103A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325876B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋　弘
Masamichi Asano
正通 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60062103A priority Critical patent/JPS61222093A/ja
Publication of JPS61222093A publication Critical patent/JPS61222093A/ja
Publication of JPH0325876B2 publication Critical patent/JPH0325876B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP60062103A 1985-03-28 1985-03-28 不揮発性半導体記憶装置 Granted JPS61222093A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60062103A JPS61222093A (ja) 1985-03-28 1985-03-28 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60062103A JPS61222093A (ja) 1985-03-28 1985-03-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61222093A true JPS61222093A (ja) 1986-10-02
JPH0325876B2 JPH0325876B2 (enrdf_load_stackoverflow) 1991-04-09

Family

ID=13190377

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60062103A Granted JPS61222093A (ja) 1985-03-28 1985-03-28 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS61222093A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JPS6488998A (en) * 1987-09-29 1989-04-03 Toshiba Corp Nonvolatile semiconductor memory
JPH01263997A (ja) * 1988-04-13 1989-10-20 Toshiba Corp 半導体記憶装置
US6233189B1 (en) 1999-06-10 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US6535427B1 (en) 1999-11-12 2003-03-18 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with initialization circuit and control method thereof
WO2004109710A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 隣接セルの状態に依存したテストを可能にした仮想接地型不揮発性メモリ
JP2011159355A (ja) * 2010-02-01 2011-08-18 Sanyo Electric Co Ltd 半導体記憶装置
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
US8437194B2 (en) 2009-10-01 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JPS6488998A (en) * 1987-09-29 1989-04-03 Toshiba Corp Nonvolatile semiconductor memory
JPH01263997A (ja) * 1988-04-13 1989-10-20 Toshiba Corp 半導体記憶装置
US6233189B1 (en) 1999-06-10 2001-05-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US6337825B2 (en) 1999-06-10 2002-01-08 Kabushiki Kaisha Toshiba Semiconductor memory device
US6535427B1 (en) 1999-11-12 2003-03-18 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with initialization circuit and control method thereof
WO2004109710A1 (ja) * 2003-06-05 2004-12-16 Fujitsu Limited 隣接セルの状態に依存したテストを可能にした仮想接地型不揮発性メモリ
US8437194B2 (en) 2009-10-01 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
JP2011159355A (ja) * 2010-02-01 2011-08-18 Sanyo Electric Co Ltd 半導体記憶装置
JP2012079399A (ja) * 2010-09-10 2012-04-19 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016042407A (ja) * 2010-09-10 2016-03-31 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JPH0325876B2 (enrdf_load_stackoverflow) 1991-04-09

Similar Documents

Publication Publication Date Title
JP3829088B2 (ja) 半導体記憶装置
US6958938B2 (en) Data writing method for semiconductor memory device and semiconductor memory device
KR100272037B1 (ko) 불휘발성 반도체 기억 장치
JP2009266356A (ja) Ｎａｎｄ型フラッシュメモリ
JP3093649B2 (ja) 不揮発性半導体メモリ装置
KR100299989B1 (ko) 불휘발성반도체기억장치
US5844271A (en) Single layer polycrystalline silicon split-gate EEPROM cell having a buried control gate
JP2807256B2 (ja) 不揮発性半導体メモリ
JPS63188896A (ja) 不揮発性半導体メモリ
JPS61222093A (ja) 不揮発性半導体記憶装置
JP3191861B2 (ja) 不揮発性半導体メモリ装置及びその消去方法
EP0851432B1 (en) A data writing circuit for a nonvolatile semiconductor memory
JP2006060030A (ja) 半導体記憶装置
JPH10302488A (ja) 不揮発性半導体記憶装置
JP2953196B2 (ja) 不揮発性半導体記憶装置
JPS62154786A (ja) 不揮発性半導体メモリ
JP2008508662A (ja) フラッシュメモリユニット、およびフラッシュメモリ素子のプログラミング方法
US5408430A (en) Method for operating nonvolatile memory semiconductor devices memories
KR0165468B1 (ko) 반도체 메모리소자 및 그 제조방법 및 그 구동방법
JPH046698A (ja) 不揮発性半導体記憶装置
US5808940A (en) Nonvolatile semiconductor memory
JPH0414871A (ja) 不揮発性半導体記憶装置及びその消去及び書き込み方法
JP5487539B2 (ja) 不揮発性半導体記憶素子
JP3106473B2 (ja) 不揮発性半導体記憶装置
JP2815077B2 (ja) 半導体不揮発性記憶装置の使用方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term