JPS60128646A - 絶縁型パワートランジスタの製造方法 - Google Patents

絶縁型パワートランジスタの製造方法

Info

Publication number
JPS60128646A
JPS60128646A JP58236154A JP23615483A JPS60128646A JP S60128646 A JPS60128646 A JP S60128646A JP 58236154 A JP58236154 A JP 58236154A JP 23615483 A JP23615483 A JP 23615483A JP S60128646 A JPS60128646 A JP S60128646A
Authority
JP
Japan
Prior art keywords
resin
guide
lead frame
header
frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58236154A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527261B2 (enExample
Inventor
Masao Yamaguchi
正男 山口
Nobukatsu Tanaka
信克 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58236154A priority Critical patent/JPS60128646A/ja
Priority to GB08429620A priority patent/GB2151845A/en
Priority to KR1019840007370A priority patent/KR930007518B1/ko
Publication of JPS60128646A publication Critical patent/JPS60128646A/ja
Publication of JPH0527261B2 publication Critical patent/JPH0527261B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/481—
    • H10W72/00—
    • H10W72/5363—
    • H10W72/5449—
    • H10W74/00—
    • H10W74/10—
    • H10W90/756—

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP58236154A 1983-12-16 1983-12-16 絶縁型パワートランジスタの製造方法 Granted JPS60128646A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58236154A JPS60128646A (ja) 1983-12-16 1983-12-16 絶縁型パワートランジスタの製造方法
GB08429620A GB2151845A (en) 1983-12-16 1984-11-23 A semiconductor memory
KR1019840007370A KR930007518B1 (ko) 1983-12-16 1984-11-24 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58236154A JPS60128646A (ja) 1983-12-16 1983-12-16 絶縁型パワートランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60128646A true JPS60128646A (ja) 1985-07-09
JPH0527261B2 JPH0527261B2 (enExample) 1993-04-20

Family

ID=16996560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58236154A Granted JPS60128646A (ja) 1983-12-16 1983-12-16 絶縁型パワートランジスタの製造方法

Country Status (3)

Country Link
JP (1) JPS60128646A (enExample)
KR (1) KR930007518B1 (enExample)
GB (1) GB2151845A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60172346U (ja) * 1984-04-23 1985-11-15 新電元工業株式会社 樹脂密封型半導体装置
JPS61207040U (enExample) * 1985-06-17 1986-12-27
JPS62180957U (enExample) * 1986-05-06 1987-11-17
JPS63291446A (ja) * 1987-05-25 1988-11-29 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPS6453426A (en) * 1987-05-11 1989-03-01 Sanken Electric Co Ltd Manufacture of resin sealed semiconductor device
JPH01309337A (ja) * 1989-02-17 1989-12-13 Sanken Electric Co Ltd 樹脂封止形半導体装置の製造方法
JPH08285117A (ja) * 1995-04-17 1996-11-01 Nippondenso Co Ltd 電磁弁ブロックの配電器
JP2008277630A (ja) * 2007-05-01 2008-11-13 Mitsubishi Electric Corp 半導体装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028741A (en) * 1990-05-24 1991-07-02 Motorola, Inc. High frequency, power semiconductor device
US20040113240A1 (en) 2002-10-11 2004-06-17 Wolfgang Hauser An electronic component with a leadframe
US11602055B2 (en) 2018-09-04 2023-03-07 Apple Inc. Overmolded components having sub-flush residuals

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55176572U (enExample) * 1979-06-07 1980-12-18
JPS57188858A (en) * 1981-05-18 1982-11-19 Matsushita Electronics Corp Plastic molded type semiconductor device
JPS58143538A (ja) * 1982-02-19 1983-08-26 Matsushita Electronics Corp 樹脂封止形半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451973A (en) * 1981-04-28 1984-06-05 Matsushita Electronics Corporation Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55176572U (enExample) * 1979-06-07 1980-12-18
JPS57188858A (en) * 1981-05-18 1982-11-19 Matsushita Electronics Corp Plastic molded type semiconductor device
JPS58143538A (ja) * 1982-02-19 1983-08-26 Matsushita Electronics Corp 樹脂封止形半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60172346U (ja) * 1984-04-23 1985-11-15 新電元工業株式会社 樹脂密封型半導体装置
JPS61207040U (enExample) * 1985-06-17 1986-12-27
JPS62180957U (enExample) * 1986-05-06 1987-11-17
JPS6453426A (en) * 1987-05-11 1989-03-01 Sanken Electric Co Ltd Manufacture of resin sealed semiconductor device
JPS63291446A (ja) * 1987-05-25 1988-11-29 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPH01309337A (ja) * 1989-02-17 1989-12-13 Sanken Electric Co Ltd 樹脂封止形半導体装置の製造方法
JPH08285117A (ja) * 1995-04-17 1996-11-01 Nippondenso Co Ltd 電磁弁ブロックの配電器
JP2008277630A (ja) * 2007-05-01 2008-11-13 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
GB8429620D0 (en) 1985-01-03
JPH0527261B2 (enExample) 1993-04-20
KR930007518B1 (ko) 1993-08-12
GB2151845A (en) 1985-07-24
KR850005152A (ko) 1985-08-21

Similar Documents

Publication Publication Date Title
US4451973A (en) Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor
CA1174821A (en) Method for manufacturing a plastic encapsulated semiconductor device and a lead frame therefor
US5935502A (en) Method for manufacturing plastic package for electronic device having a fully insulated dissipator
US6157074A (en) Lead frame adapted for variable sized devices, semiconductor package with such lead frame and method for using same
CN1146987C (zh) 封装在塑料封装中的半导体器件和生产它所用的金属模具
JPS60128646A (ja) 絶縁型パワートランジスタの製造方法
US5508232A (en) Method of manufacturing a semiconductor device
JPH0815165B2 (ja) 樹脂絶縁型半導体装置の製造方法
KR100453019B1 (ko) 비교적높은전압들에적합한표면실장용반도체장치제조방법및그반도체장치
JPH0254665B2 (enExample)
JPS60128645A (ja) 絶縁型パワートランジスタの製造方法
JPS615529A (ja) 絶縁型半導体装置
JPS62219642A (ja) レジンパツケ−ジ型電子部品
KR960003854B1 (ko) 반도체 장치 제조방법
JPS61208242A (ja) 半導体装置
JPS6116556A (ja) 樹脂封止型半導体装置
JPS615555A (ja) 絶縁型半導体装置
JPH0582586A (ja) 半導体装置及びその製造方法
JPS6336699Y2 (enExample)
JPS607750A (ja) 絶縁型半導体装置
JPH0512853B2 (enExample)
JPH02202042A (ja) 樹脂封止型半導体装置
JPH02152260A (ja) 樹脂封止半導体装置およびそれの製造に用いる金型
JPS6194349A (ja) 樹脂封止形半導体装置の製造方法及びその製造方法に使用するリ−ドフレ−ム
JPS61218137A (ja) 半導体装置の製造方法