JPS5918360B2 - ガドリニウムガ−ネツトを製造する為の方法 - Google Patents

ガドリニウムガ−ネツトを製造する為の方法

Info

Publication number
JPS5918360B2
JPS5918360B2 JP55042083A JP4208380A JPS5918360B2 JP S5918360 B2 JPS5918360 B2 JP S5918360B2 JP 55042083 A JP55042083 A JP 55042083A JP 4208380 A JP4208380 A JP 4208380A JP S5918360 B2 JPS5918360 B2 JP S5918360B2
Authority
JP
Japan
Prior art keywords
iridium
crucible
melt
bowl
lid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55042083A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55136200A (en
Inventor
ジヨン・ベンソン・ハツセル・ジユニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of JPS55136200A publication Critical patent/JPS55136200A/ja
Publication of JPS5918360B2 publication Critical patent/JPS5918360B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
JP55042083A 1979-04-12 1980-04-02 ガドリニウムガ−ネツトを製造する為の方法 Expired JPS5918360B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2921679A 1979-04-12 1979-04-12
US29216 2001-12-28

Publications (2)

Publication Number Publication Date
JPS55136200A JPS55136200A (en) 1980-10-23
JPS5918360B2 true JPS5918360B2 (ja) 1984-04-26

Family

ID=21847874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55042083A Expired JPS5918360B2 (ja) 1979-04-12 1980-04-02 ガドリニウムガ−ネツトを製造する為の方法

Country Status (7)

Country Link
JP (1) JPS5918360B2 (nl)
CA (1) CA1171341A (nl)
CH (1) CH646402A5 (nl)
DE (1) DE3013045C2 (nl)
FR (1) FR2453916A1 (nl)
GB (1) GB2047113B (nl)
NL (1) NL8002144A (nl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605094A (ja) * 1983-06-13 1985-01-11 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
FR2548689B1 (fr) * 1983-07-07 1985-11-08 Crismatec Procede de fabrication de monocristaux de germanate de bismuth a fort rendement de scintillation
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP6134379B2 (ja) * 2012-04-24 2017-05-24 フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン インジウム酸化物（Ｉｎ２Ｏ３）単結晶を成長させる方法及び装置並びにインジウム酸化物（Ｉｎ２Ｏ３）
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法
CN112703277A (zh) * 2019-08-21 2021-04-23 眉山博雅新材料有限公司 多组分石榴石结构闪烁晶体生长方法及设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
CA1080589A (en) * 1976-06-24 1980-07-01 Union Carbide Corporation Method for producing single crystal gadolinium gallium

Also Published As

Publication number Publication date
DE3013045A1 (de) 1980-10-16
NL8002144A (nl) 1980-10-14
CH646402A5 (fr) 1984-11-30
FR2453916A1 (fr) 1980-11-07
GB2047113B (en) 1983-08-03
GB2047113A (en) 1980-11-26
DE3013045C2 (de) 1983-11-03
CA1171341A (en) 1984-07-24
JPS55136200A (en) 1980-10-23

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