DE3013045C2 - Vorrichtung zum Ziehen von Einkristallbirnen aus Gadolinium-Gallium-Granat - Google Patents

Vorrichtung zum Ziehen von Einkristallbirnen aus Gadolinium-Gallium-Granat

Info

Publication number
DE3013045C2
DE3013045C2 DE3013045A DE3013045A DE3013045C2 DE 3013045 C2 DE3013045 C2 DE 3013045C2 DE 3013045 A DE3013045 A DE 3013045A DE 3013045 A DE3013045 A DE 3013045A DE 3013045 C2 DE3013045 C2 DE 3013045C2
Authority
DE
Germany
Prior art keywords
crucible
iridium
tube
opening
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3013045A
Other languages
German (de)
English (en)
Other versions
DE3013045A1 (de
Inventor
John Benson San Diego Calif. Hassell jun.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of DE3013045A1 publication Critical patent/DE3013045A1/de
Application granted granted Critical
Publication of DE3013045C2 publication Critical patent/DE3013045C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
DE3013045A 1979-04-12 1980-04-03 Vorrichtung zum Ziehen von Einkristallbirnen aus Gadolinium-Gallium-Granat Expired DE3013045C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2921679A 1979-04-12 1979-04-12

Publications (2)

Publication Number Publication Date
DE3013045A1 DE3013045A1 (de) 1980-10-16
DE3013045C2 true DE3013045C2 (de) 1983-11-03

Family

ID=21847874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3013045A Expired DE3013045C2 (de) 1979-04-12 1980-04-03 Vorrichtung zum Ziehen von Einkristallbirnen aus Gadolinium-Gallium-Granat

Country Status (7)

Country Link
JP (1) JPS5918360B2 (nl)
CA (1) CA1171341A (nl)
CH (1) CH646402A5 (nl)
DE (1) DE3013045C2 (nl)
FR (1) FR2453916A1 (nl)
GB (1) GB2047113B (nl)
NL (1) NL8002144A (nl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605094A (ja) * 1983-06-13 1985-01-11 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
FR2548689B1 (fr) * 1983-07-07 1985-11-08 Crismatec Procede de fabrication de monocristaux de germanate de bismuth a fort rendement de scintillation
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US10208399B2 (en) 2012-04-24 2019-02-19 Forschungsverbund Berlin E.V. Method and apparatus for growing indium oxide (In2O3) single crystals and indium oxide (In2O3) single crystal
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法
EP3851562A4 (en) * 2019-08-21 2022-02-09 Meishan Boya Advanced Materials Co., Ltd. METHOD AND EQUIPMENT FOR GROWING MULTI-COMPONENT GARNET STRUCTURE SCINTILLATOR CRYSTALS

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
CA1080589A (en) * 1976-06-24 1980-07-01 Union Carbide Corporation Method for producing single crystal gadolinium gallium

Also Published As

Publication number Publication date
JPS55136200A (en) 1980-10-23
DE3013045A1 (de) 1980-10-16
GB2047113A (en) 1980-11-26
FR2453916A1 (fr) 1980-11-07
CA1171341A (en) 1984-07-24
GB2047113B (en) 1983-08-03
CH646402A5 (fr) 1984-11-30
JPS5918360B2 (ja) 1984-04-26
NL8002144A (nl) 1980-10-14

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8125 Change of the main classification

Ipc: C30B 15/10

8181 Inventor (new situation)

Free format text: HASSELL JUN., JOHN BENSON, SAN DIEGO, CALIF., US

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee