CA1171341A - Method for producing gadolinium garnet - Google Patents

Method for producing gadolinium garnet

Info

Publication number
CA1171341A
CA1171341A CA000349487A CA349487A CA1171341A CA 1171341 A CA1171341 A CA 1171341A CA 000349487 A CA000349487 A CA 000349487A CA 349487 A CA349487 A CA 349487A CA 1171341 A CA1171341 A CA 1171341A
Authority
CA
Canada
Prior art keywords
iridium
crucible
melt
cover member
boule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000349487A
Other languages
English (en)
French (fr)
Inventor
John B. Hassell, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Application granted granted Critical
Publication of CA1171341A publication Critical patent/CA1171341A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)
CA000349487A 1979-04-12 1980-04-09 Method for producing gadolinium garnet Expired CA1171341A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2921679A 1979-04-12 1979-04-12
US029,216 1979-04-12

Publications (1)

Publication Number Publication Date
CA1171341A true CA1171341A (en) 1984-07-24

Family

ID=21847874

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000349487A Expired CA1171341A (en) 1979-04-12 1980-04-09 Method for producing gadolinium garnet

Country Status (7)

Country Link
JP (1) JPS5918360B2 (nl)
CA (1) CA1171341A (nl)
CH (1) CH646402A5 (nl)
DE (1) DE3013045C2 (nl)
FR (1) FR2453916A1 (nl)
GB (1) GB2047113B (nl)
NL (1) NL8002144A (nl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605094A (ja) * 1983-06-13 1985-01-11 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
FR2548689B1 (fr) * 1983-07-07 1985-11-08 Crismatec Procede de fabrication de monocristaux de germanate de bismuth a fort rendement de scintillation
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
JP6134379B2 (ja) * 2012-04-24 2017-05-24 フォルシュングスフェアブント・ベルリン・アインゲトラーゲナー・フェライン インジウム酸化物(In2O3)単結晶を成長させる方法及び装置並びにインジウム酸化物(In2O3)
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法
CN112703277A (zh) * 2019-08-21 2021-04-23 眉山博雅新材料有限公司 多组分石榴石结构闪烁晶体生长方法及设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723599A (en) * 1971-08-18 1973-03-27 Bell Telephone Labor Inc Technique for growth of single crystal gallium garnet
CA1080589A (en) * 1976-06-24 1980-07-01 Union Carbide Corporation Method for producing single crystal gadolinium gallium

Also Published As

Publication number Publication date
DE3013045A1 (de) 1980-10-16
NL8002144A (nl) 1980-10-14
CH646402A5 (fr) 1984-11-30
FR2453916A1 (fr) 1980-11-07
JPS5918360B2 (ja) 1984-04-26
GB2047113B (en) 1983-08-03
GB2047113A (en) 1980-11-26
DE3013045C2 (de) 1983-11-03
JPS55136200A (en) 1980-10-23

Similar Documents

Publication Publication Date Title
US4404172A (en) Method and apparatus for forming and growing a single crystal of a semiconductor compound
Lawson A method of growing single crystals of lead telluride and lead selenide
US4521272A (en) Method for forming and growing a single crystal of a semiconductor compound
CA1171341A (en) Method for producing gadolinium garnet
JPH02133389A (ja) シリコン単結晶の製造装置
US3701636A (en) Crystal growing apparatus
US4303465A (en) Method of growing monocrystals of corundum from a melt
US4199396A (en) Method for producing single crystal gadolinium gallium garnet
AU770366B2 (en) Method and system for stabilizing dendritic web crystal growth
US4224099A (en) Method for producing R-plane single crystal alpha alumina
EP0765406A1 (en) Improvements in crystal growth
US3826625A (en) Method and apparatus for growing crystalline bodies from the melt using a porous die member
GB1565407A (en) Method for producing single crystal gadolinium gallium
US3567397A (en) Apparatus for obtaining a dross-free crystalline growth melt
US4946544A (en) Crystal growth method
US6997986B2 (en) Method for preparing single crystal
Rubin et al. Growth of sapphire and ruby by the Czochralski technique
US3819421A (en) Method for the manufacture of dislocation-free, single-crystal gallium arsenide rod
US3282654A (en) Crystal growing furnace with an alumina liner
CA1055816A (en) Method of producing sodium beta-alumina single crystals
US5376622A (en) Method of manufacturing an ingot of a high critical temperature superconductive oxide
US4695347A (en) Process for the formation of single crystals from the gas phase
Buehler Simple pressurized chambers for liquid encapsulated czochralski crystal growth
US3212858A (en) Apparatus for producing crystalline semiconductor material
US4234376A (en) Growth of single crystal beryllium oxide

Legal Events

Date Code Title Description
MKEX Expiry