JPS5853859A - 集積型薄膜素子の製造方法 - Google Patents

集積型薄膜素子の製造方法

Info

Publication number
JPS5853859A
JPS5853859A JP56152734A JP15273481A JPS5853859A JP S5853859 A JPS5853859 A JP S5853859A JP 56152734 A JP56152734 A JP 56152734A JP 15273481 A JP15273481 A JP 15273481A JP S5853859 A JPS5853859 A JP S5853859A
Authority
JP
Japan
Prior art keywords
thin film
electrode
type
integrated thin
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56152734A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257259B2 (enrdf_load_stackoverflow
Inventor
Shinichiro Ishihara
伸一郎 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56152734A priority Critical patent/JPS5853859A/ja
Priority to GB08226037A priority patent/GB2108755B/en
Priority to DE19823234925 priority patent/DE3234925A1/de
Publication of JPS5853859A publication Critical patent/JPS5853859A/ja
Publication of JPS6257259B2 publication Critical patent/JPS6257259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP56152734A 1981-09-26 1981-09-26 集積型薄膜素子の製造方法 Granted JPS5853859A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56152734A JPS5853859A (ja) 1981-09-26 1981-09-26 集積型薄膜素子の製造方法
GB08226037A GB2108755B (en) 1981-09-26 1982-09-13 Thin film devices having diffused interconnections
DE19823234925 DE3234925A1 (de) 1981-09-26 1982-09-21 Duennschichtvorrichtung und verfahren zu deren herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56152734A JPS5853859A (ja) 1981-09-26 1981-09-26 集積型薄膜素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5853859A true JPS5853859A (ja) 1983-03-30
JPS6257259B2 JPS6257259B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=15546989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56152734A Granted JPS5853859A (ja) 1981-09-26 1981-09-26 集積型薄膜素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5853859A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5554438A (en) * 1978-10-17 1980-04-21 Matsushita Electronics Corp Pinhole detecting method for chemical vapor-deposition film
JPS60130160A (ja) * 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
JPS62165971A (ja) * 1986-01-17 1987-07-22 Sharp Corp ダイナミツク型半導体記憶素子
JP2011216175A (ja) * 2010-02-19 2011-10-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011227981A (ja) * 2010-03-19 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体メモリ装置
JP2020145457A (ja) * 2011-04-15 2020-09-10 株式会社半導体エネルギー研究所 半導体装置
JP2022137292A (ja) * 2014-03-07 2022-09-21 株式会社半導体エネルギー研究所 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080788A (enrdf_load_stackoverflow) * 1973-10-30 1975-07-01
JPS5130485A (enrdf_load_stackoverflow) * 1974-09-09 1976-03-15 Fujitsu Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5080788A (enrdf_load_stackoverflow) * 1973-10-30 1975-07-01
JPS5130485A (enrdf_load_stackoverflow) * 1974-09-09 1976-03-15 Fujitsu Ltd

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5554438A (en) * 1978-10-17 1980-04-21 Matsushita Electronics Corp Pinhole detecting method for chemical vapor-deposition film
JPS60130160A (ja) * 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
JPS62165971A (ja) * 1986-01-17 1987-07-22 Sharp Corp ダイナミツク型半導体記憶素子
JP2011216175A (ja) * 2010-02-19 2011-10-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2011227981A (ja) * 2010-03-19 2011-11-10 Semiconductor Energy Lab Co Ltd 半導体メモリ装置
US9142549B2 (en) 2010-03-19 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP2020145457A (ja) * 2011-04-15 2020-09-10 株式会社半導体エネルギー研究所 半導体装置
JP2023178364A (ja) * 2011-04-15 2023-12-14 株式会社半導体エネルギー研究所 半導体装置
JP2022137292A (ja) * 2014-03-07 2022-09-21 株式会社半導体エネルギー研究所 半導体装置
US11751409B2 (en) 2014-03-07 2023-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12101945B2 (en) 2014-03-07 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Also Published As

Publication number Publication date
JPS6257259B2 (enrdf_load_stackoverflow) 1987-11-30

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