JPS58169958A - Ｍｉｓスタテイツク・ランダムアクセスメモリ - Google Patents

Ｍｉｓスタテイツク・ランダムアクセスメモリ

Info

Publication number
JPS58169958A
JPS58169958A JP57051152A JP5115282A JPS58169958A JP S58169958 A JPS58169958 A JP S58169958A JP 57051152 A JP57051152 A JP 57051152A JP 5115282 A JP5115282 A JP 5115282A JP S58169958 A JPS58169958 A JP S58169958A
Authority
JP
Japan
Prior art keywords
voltage
raised
writing
vcc
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051152A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237468B2 (en, 2012
Inventor
Keizo Aoyama
青山　慶三
Takahiko Yamauchi
山内　隆彦
Teruo Seki
照夫 関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57051152A priority Critical patent/JPS58169958A/ja
Priority to EP83301734A priority patent/EP0090632B1/en
Priority to DE8383301734T priority patent/DE3380235D1/de
Priority to US06/480,582 priority patent/US4563754A/en
Publication of JPS58169958A publication Critical patent/JPS58169958A/ja
Publication of JPS6237468B2 publication Critical patent/JPS6237468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP57051152A 1982-03-31 1982-03-31 Ｍｉｓスタテイツク・ランダムアクセスメモリ Granted JPS58169958A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57051152A JPS58169958A (ja) 1982-03-31 1982-03-31 Ｍｉｓスタテイツク・ランダムアクセスメモリ
EP83301734A EP0090632B1 (en) 1982-03-31 1983-03-28 Static-type random-access memory device
DE8383301734T DE3380235D1 (en) 1982-03-31 1983-03-28 Static-type random-access memory device
US06/480,582 US4563754A (en) 1982-03-31 1983-03-30 Static-type random-access memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051152A JPS58169958A (ja) 1982-03-31 1982-03-31 Ｍｉｓスタテイツク・ランダムアクセスメモリ

Publications (2)

Publication Number Publication Date
JPS58169958A true JPS58169958A (ja) 1983-10-06
JPS6237468B2 JPS6237468B2 (en, 2012) 1987-08-12

Family

ID=12878841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051152A Granted JPS58169958A (ja) 1982-03-31 1982-03-31 Ｍｉｓスタテイツク・ランダムアクセスメモリ

Country Status (4)

Country Link
US (1) US4563754A (en, 2012)
EP (1) EP0090632B1 (en, 2012)
JP (1) JPS58169958A (en, 2012)
DE (1) DE3380235D1 (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056675A (ja) * 1991-06-27 1993-01-14 Nec Corp スタテイツク型半導体メモリ装置
US5875133A (en) * 1995-07-21 1999-02-23 Seiko Epson Corporation Semiconductor memory device and a method for stepping up its word lines

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5051959A (en) * 1985-08-14 1991-09-24 Fujitsu Limited Complementary semiconductor memory device including cell access transistor and word line driving transistor having channels of different conductivity type
JPS6238592A (ja) * 1985-08-14 1987-02-19 Fujitsu Ltd 相補型メモリの行選択線駆動回路
JPS6286756U (en, 2012) * 1985-11-20 1987-06-03
US4901280A (en) * 1986-07-11 1990-02-13 Texas Instruments Incorporated Pull-up circuit for high impedance word lines
JPS63104290A (ja) * 1986-10-21 1988-05-09 Nec Corp 半導体記憶装置
US4769564A (en) * 1987-05-15 1988-09-06 Analog Devices, Inc. Sense amplifier
JP2654548B2 (ja) * 1987-10-02 1997-09-17 株式会社日立製作所 半導体記憶装置
US5175826A (en) * 1988-05-26 1992-12-29 Ibm Corporation Delayed cache write enable circuit for a dual bus microcomputer system with an 80386 and 82385
JPH0268796A (ja) * 1988-09-02 1990-03-08 Fujitsu Ltd 半導体記憶装置
EP0426597B1 (en) * 1989-10-30 1995-11-08 International Business Machines Corporation Bit decode scheme for memory arrays
US5022010A (en) * 1989-10-30 1991-06-04 International Business Machines Corporation Word decoder for a memory array
JP3228759B2 (ja) * 1990-01-24 2001-11-12 セイコーエプソン株式会社 半導体記憶装置及びデータ処理装置
JPH0631256U (ja) * 1992-09-24 1994-04-22 アイホン株式会社 フックスイッチ機構
JP3068389B2 (ja) * 1993-09-29 2000-07-24 日本電気株式会社 半導体記憶装置
JP2980797B2 (ja) * 1993-12-03 1999-11-22 シャープ株式会社 Ｍｏｓ型スタティックメモリ装置
US6034913A (en) * 1997-09-19 2000-03-07 Siemens Microelectronics, Inc. Apparatus and method for high-speed wordline driving with low area overhead
GB2395491B (en) 2001-08-14 2006-03-01 Magnesium Technology Ltd Magnesium anodisation system and methods
US7352609B2 (en) * 2005-08-15 2008-04-01 International Business Machines Corporation Voltage controlled static random access memory
US7466582B2 (en) * 2005-08-15 2008-12-16 International Business Machines Corporation Voltage controlled static random access memory
JP4579965B2 (ja) * 2007-12-19 2010-11-10 パナソニック株式会社 半導体記憶装置
US10325648B2 (en) 2016-12-14 2019-06-18 Qualcomm Incorporated Write driver scheme for bit-writable memories

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075690A (en) * 1976-03-15 1978-02-21 Rca Corporation Write enhancement circuit
JPS5619585A (en) * 1979-07-26 1981-02-24 Toshiba Corp Semiconductor memory unit
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 富士通株式会社 半導体記億装置
US4500799A (en) * 1980-07-28 1985-02-19 Inmos Corporation Bootstrap driver circuits for an MOS memory
US4451907A (en) * 1981-10-26 1984-05-29 Motorola, Inc. Pull-up circuit for a memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056675A (ja) * 1991-06-27 1993-01-14 Nec Corp スタテイツク型半導体メモリ装置
US5875133A (en) * 1995-07-21 1999-02-23 Seiko Epson Corporation Semiconductor memory device and a method for stepping up its word lines

Also Published As

Publication number Publication date
US4563754A (en) 1986-01-07
JPS6237468B2 (en, 2012) 1987-08-12
EP0090632B1 (en) 1989-07-19
EP0090632A2 (en) 1983-10-05
EP0090632A3 (en) 1986-10-15
DE3380235D1 (en) 1989-08-24

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