JPS58132755A - アモルフアス・シリコン感光体製造方法及びその製造装置 - Google Patents

アモルフアス・シリコン感光体製造方法及びその製造装置

Info

Publication number
JPS58132755A
JPS58132755A JP57015871A JP1587182A JPS58132755A JP S58132755 A JPS58132755 A JP S58132755A JP 57015871 A JP57015871 A JP 57015871A JP 1587182 A JP1587182 A JP 1587182A JP S58132755 A JPS58132755 A JP S58132755A
Authority
JP
Japan
Prior art keywords
casing
base
amorphous silicon
gas
silicon photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57015871A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338586B2 (enExample
Inventor
Katsumi Suzuki
克己 鈴木
Hideji Yoshizawa
吉澤　秀二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57015871A priority Critical patent/JPS58132755A/ja
Priority to US06/457,231 priority patent/US4501766A/en
Priority to GB08300948A priority patent/GB2114160B/en
Priority to DE3303435A priority patent/DE3303435C2/de
Priority to DE3344850A priority patent/DE3344850C2/de
Publication of JPS58132755A publication Critical patent/JPS58132755A/ja
Publication of JPH0338586B2 publication Critical patent/JPH0338586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5093—Coaxial electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
JP57015871A 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法及びその製造装置 Granted JPS58132755A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57015871A JPS58132755A (ja) 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法及びその製造装置
US06/457,231 US4501766A (en) 1982-02-03 1983-01-11 Film depositing apparatus and a film depositing method
GB08300948A GB2114160B (en) 1982-02-03 1983-01-14 Film depositing apparatus and method
DE3303435A DE3303435C2 (de) 1982-02-03 1983-02-02 Vorrichtung zur Abscheidung einer Schicht aus amorphem Silizium
DE3344850A DE3344850C2 (enExample) 1982-02-03 1983-02-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57015871A JPS58132755A (ja) 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法及びその製造装置

Publications (2)

Publication Number Publication Date
JPS58132755A true JPS58132755A (ja) 1983-08-08
JPH0338586B2 JPH0338586B2 (enExample) 1991-06-11

Family

ID=11900857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57015871A Granted JPS58132755A (ja) 1982-02-03 1982-02-03 アモルフアス・シリコン感光体製造方法及びその製造装置

Country Status (2)

Country Link
JP (1) JPS58132755A (enExample)
DE (1) DE3344850C2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186849A (ja) * 1984-02-14 1985-09-24 エナージー・コンバーション・デバイセス・インコーポレーテッド 堆積膜形成方法および装置
JPS60204882A (ja) * 1984-03-28 1985-10-16 Anelva Corp 放電反応処理装置
JPH0625389U (ja) * 1992-09-09 1994-04-05 オキナ株式会社 慶弔事用等の商品外装材
WO2021075074A1 (ja) * 2019-10-15 2021-04-22 サンテック株式会社 基板回転装置
US12404586B2 (en) 2023-06-23 2025-09-02 santec Holdings Corporation Substrate rotating apparatus, processing system, and processing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4407909C3 (de) † 1994-03-09 2003-05-15 Unaxis Deutschland Holding Verfahren und Vorrichtung zum kontinuierlichen oder quasi-kontinuierlichen Beschichten von Brillengläsern

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185971A (en) * 1981-05-11 1982-11-16 Oki Electric Ind Co Ltd Formation of glow discharge film
JPS57188671A (en) * 1981-05-18 1982-11-19 Oki Electric Ind Co Ltd Formation of glow discharge film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57185971A (en) * 1981-05-11 1982-11-16 Oki Electric Ind Co Ltd Formation of glow discharge film
JPS57188671A (en) * 1981-05-18 1982-11-19 Oki Electric Ind Co Ltd Formation of glow discharge film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186849A (ja) * 1984-02-14 1985-09-24 エナージー・コンバーション・デバイセス・インコーポレーテッド 堆積膜形成方法および装置
JPS60204882A (ja) * 1984-03-28 1985-10-16 Anelva Corp 放電反応処理装置
JPH0625389U (ja) * 1992-09-09 1994-04-05 オキナ株式会社 慶弔事用等の商品外装材
WO2021075074A1 (ja) * 2019-10-15 2021-04-22 サンテック株式会社 基板回転装置
US12152297B2 (en) 2019-10-15 2024-11-26 santec Holdings Corporation Substrate rotating apparatus
US12404586B2 (en) 2023-06-23 2025-09-02 santec Holdings Corporation Substrate rotating apparatus, processing system, and processing method

Also Published As

Publication number Publication date
JPH0338586B2 (enExample) 1991-06-11
DE3344850C2 (enExample) 1987-07-30

Similar Documents

Publication Publication Date Title
US4501766A (en) Film depositing apparatus and a film depositing method
JPS58197262A (ja) 量産型真空成膜装置及び真空成膜法
JPH0338586B2 (enExample)
JPS6010618A (ja) プラズマｃｖｄ装置
EA035003B1 (ru) Вакуумная установка для нанесения тонкопленочных покрытий и способ нанесения на ней оптических покрытий
JPH03626B2 (enExample)
JPS6153429B2 (enExample)
JPH03625B2 (enExample)
JPH0438449B2 (enExample)
CN221501228U (zh) 真空镀膜装置
JP2657531B2 (ja) アモルファスシリコン膜の形成方法
JPS61221368A (ja) アモルフアスシリコン膜の量産式成膜方法
JPS6177056A (ja) アモルフアスシリコン感光体製造用装置
JPS59217618A (ja) アモルフアスシリコン成膜装置
JPS62146262A (ja) 電子写真用感光体製造装置
JPS58202040A (ja) 容量結合型グロ−放電分解装置
JPS60212224A (ja) 光化学反応装置
JPH0623571Y2 (ja) プラズマｃｖｄ装置
JPS58183939A (ja) 電子写真用感光体の製造装置
JPH0462168B2 (enExample)
JPS58171564A (ja) 容量結合型グロ−放電分解装置
JPH01162768A (ja) 水素化アモルファスシリコン成膜装置
JPH01116080A (ja) 清掃室を具備した光励起気相成長装置
JPS61196526A (ja) 光化学的気相成長方法及びその装置
JPS62139878A (ja) プラズマによる成膜装置