JPS5810885A - 注入レ−ザ - Google Patents

注入レ−ザ

Info

Publication number
JPS5810885A
JPS5810885A JP57112632A JP11263282A JPS5810885A JP S5810885 A JPS5810885 A JP S5810885A JP 57112632 A JP57112632 A JP 57112632A JP 11263282 A JP11263282 A JP 11263282A JP S5810885 A JPS5810885 A JP S5810885A
Authority
JP
Japan
Prior art keywords
layer
refractive index
active layer
injection
inactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57112632A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643078B2 (https=
Inventor
ジヨ−ジ・ホラス・ブルツケ・トンプソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of JPS5810885A publication Critical patent/JPS5810885A/ja
Publication of JPS643078B2 publication Critical patent/JPS643078B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57112632A 1981-07-02 1982-07-01 注入レ−ザ Granted JPS5810885A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08120465A GB2105099B (en) 1981-07-02 1981-07-02 Injection laser
GB8120465 1981-07-02

Publications (2)

Publication Number Publication Date
JPS5810885A true JPS5810885A (ja) 1983-01-21
JPS643078B2 JPS643078B2 (https=) 1989-01-19

Family

ID=10522967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57112632A Granted JPS5810885A (ja) 1981-07-02 1982-07-01 注入レ−ザ

Country Status (4)

Country Link
US (1) US4480331A (https=)
JP (1) JPS5810885A (https=)
AU (1) AU552066B2 (https=)
GB (1) GB2105099B (https=)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662983A (en) * 1982-10-26 1987-05-05 American Telephone And Telegraph Company At&T Bell Laboratories Multiple meltback procedure for LPE growth on InP
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPH067618B2 (ja) * 1983-12-26 1994-01-26 株式会社東芝 半導体レ−ザ装置
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
DE3421215A1 (de) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m
JPH0685455B2 (ja) * 1984-07-18 1994-10-26 ソニー株式会社 半導体レーザー
DE3515861C1 (de) * 1985-05-03 1994-03-17 Diehl Gmbh & Co Sensoranordnung für Suchzünder-Submunition
US4647320A (en) * 1985-05-22 1987-03-03 Trw Inc. Method of making a surface emitting light emitting diode
US4694311A (en) * 1985-05-22 1987-09-15 Trw Inc. Planar light-emitting diode
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置
EP0264225B1 (en) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63150986A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子
JPS63177495A (ja) * 1987-01-16 1988-07-21 Sharp Corp 半導体レ−ザ素子
JPS63208296A (ja) * 1987-02-24 1988-08-29 Sharp Corp 半導体装置
JPS63271992A (ja) * 1987-04-28 1988-11-09 Sharp Corp 半導体レ−ザ素子
JPS63287082A (ja) * 1987-05-19 1988-11-24 Sharp Corp 半導体レ−ザ素子
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5065404A (en) * 1989-07-12 1991-11-12 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
US4989213A (en) * 1989-10-30 1991-01-29 Polaroid Corporation Narrow divergence, single quantum well, separate confinement, algaas laser
US5319661A (en) * 1990-12-27 1994-06-07 The Furukawa Electric Co., Ltd. Semiconductor double heterostructure laser device with InP current blocking layer
US5933743A (en) * 1997-07-03 1999-08-03 Micron Technology, Inc. Method of improving alignment signal strength by reducing refraction index at interface of materials in semiconductors
US6501188B1 (en) 1997-07-03 2002-12-31 Micron Technology, Inc. Method for improving a stepper signal in a planarized surface over alignment topography
JP2001094136A (ja) * 1999-09-22 2001-04-06 Canon Inc 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法
USD470627S1 (en) 2002-05-16 2003-02-18 Su-Chen Kuo Cosmetic container
EP3900523A4 (en) 2018-12-21 2022-02-09 Green's Green Co., Ltd. PLANT FILM

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580386A (en) * 1978-12-11 1980-06-17 Fujitsu Ltd Manufacture of semiconductor light emitting device
JPS55128822A (en) * 1979-03-28 1980-10-06 Kokusai Denshin Denwa Co Ltd <Kdd> Method of epitaxial growth at liquid phase
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580386A (en) * 1978-12-11 1980-06-17 Fujitsu Ltd Manufacture of semiconductor light emitting device
JPS55128822A (en) * 1979-03-28 1980-10-06 Kokusai Denshin Denwa Co Ltd <Kdd> Method of epitaxial growth at liquid phase
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi

Also Published As

Publication number Publication date
JPS643078B2 (https=) 1989-01-19
AU552066B2 (en) 1986-05-22
GB2105099A (en) 1983-03-16
GB2105099B (en) 1985-06-12
US4480331A (en) 1984-10-30
AU8532682A (en) 1983-01-06

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