JPS643078B2 - - Google Patents
Info
- Publication number
- JPS643078B2 JPS643078B2 JP57112632A JP11263282A JPS643078B2 JP S643078 B2 JPS643078 B2 JP S643078B2 JP 57112632 A JP57112632 A JP 57112632A JP 11263282 A JP11263282 A JP 11263282A JP S643078 B2 JPS643078 B2 JP S643078B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- refractive index
- active layer
- laser device
- injection laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 79
- 230000000903 blocking effect Effects 0.000 claims description 52
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 11
- 229910052785 arsenic Inorganic materials 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 230000012010 growth Effects 0.000 claims description 6
- 230000001902 propagating effect Effects 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08120465A GB2105099B (en) | 1981-07-02 | 1981-07-02 | Injection laser |
| GB8120465 | 1981-07-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5810885A JPS5810885A (ja) | 1983-01-21 |
| JPS643078B2 true JPS643078B2 (https=) | 1989-01-19 |
Family
ID=10522967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57112632A Granted JPS5810885A (ja) | 1981-07-02 | 1982-07-01 | 注入レ−ザ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4480331A (https=) |
| JP (1) | JPS5810885A (https=) |
| AU (1) | AU552066B2 (https=) |
| GB (1) | GB2105099B (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020129756A1 (ja) | 2018-12-21 | 2020-06-25 | 株式会社グリーンズグリーン | 植生シート |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4662983A (en) * | 1982-10-26 | 1987-05-05 | American Telephone And Telegraph Company At&T Bell Laboratories | Multiple meltback procedure for LPE growth on InP |
| GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
| JPS6014482A (ja) * | 1983-07-04 | 1985-01-25 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS60110188A (ja) * | 1983-11-18 | 1985-06-15 | Sharp Corp | 半導体レ−ザ素子 |
| JPH067618B2 (ja) * | 1983-12-26 | 1994-01-26 | 株式会社東芝 | 半導体レ−ザ装置 |
| JPS60192380A (ja) * | 1984-03-13 | 1985-09-30 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| DE3421215A1 (de) * | 1984-06-07 | 1985-12-12 | Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt | Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m |
| JPH0685455B2 (ja) * | 1984-07-18 | 1994-10-26 | ソニー株式会社 | 半導体レーザー |
| DE3515861C1 (de) * | 1985-05-03 | 1994-03-17 | Diehl Gmbh & Co | Sensoranordnung für Suchzünder-Submunition |
| US4647320A (en) * | 1985-05-22 | 1987-03-03 | Trw Inc. | Method of making a surface emitting light emitting diode |
| US4694311A (en) * | 1985-05-22 | 1987-09-15 | Trw Inc. | Planar light-emitting diode |
| US4799228A (en) * | 1985-08-23 | 1989-01-17 | Kabushiki Kaisha Toshiba | Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide |
| JPS6273687A (ja) * | 1985-09-26 | 1987-04-04 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| EP0264225B1 (en) * | 1986-10-07 | 1994-01-19 | Sharp Kabushiki Kaisha | A semiconductor laser device and a method for the production of the same |
| JPS63150985A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
| JPS63150986A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
| JPS63164484A (ja) * | 1986-12-26 | 1988-07-07 | Sharp Corp | 半導体レ−ザ素子 |
| JPS63177495A (ja) * | 1987-01-16 | 1988-07-21 | Sharp Corp | 半導体レ−ザ素子 |
| JPS63208296A (ja) * | 1987-02-24 | 1988-08-29 | Sharp Corp | 半導体装置 |
| JPS63271992A (ja) * | 1987-04-28 | 1988-11-09 | Sharp Corp | 半導体レ−ザ素子 |
| JPS63287082A (ja) * | 1987-05-19 | 1988-11-24 | Sharp Corp | 半導体レ−ザ素子 |
| JPH01186688A (ja) * | 1987-09-02 | 1989-07-26 | Sharp Corp | 半導体レーザ装置 |
| JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
| US5181218A (en) * | 1988-12-14 | 1993-01-19 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor laser with non-absorbing mirror structure |
| US5065404A (en) * | 1989-07-12 | 1991-11-12 | Kabushiki Kaisha Toshiba | Transverse-mode oscillation semiconductor laser device |
| US4989213A (en) * | 1989-10-30 | 1991-01-29 | Polaroid Corporation | Narrow divergence, single quantum well, separate confinement, algaas laser |
| US5319661A (en) * | 1990-12-27 | 1994-06-07 | The Furukawa Electric Co., Ltd. | Semiconductor double heterostructure laser device with InP current blocking layer |
| US5933743A (en) * | 1997-07-03 | 1999-08-03 | Micron Technology, Inc. | Method of improving alignment signal strength by reducing refraction index at interface of materials in semiconductors |
| US6501188B1 (en) | 1997-07-03 | 2002-12-31 | Micron Technology, Inc. | Method for improving a stepper signal in a planarized surface over alignment topography |
| JP2001094136A (ja) * | 1999-09-22 | 2001-04-06 | Canon Inc | 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法 |
| USD470627S1 (en) | 2002-05-16 | 2003-02-18 | Su-Chen Kuo | Cosmetic container |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593872B2 (ja) * | 1978-12-11 | 1984-01-26 | 富士通株式会社 | 半導体発光装置の製造方法 |
| JPS55128822A (en) * | 1979-03-28 | 1980-10-06 | Kokusai Denshin Denwa Co Ltd <Kdd> | Method of epitaxial growth at liquid phase |
| JPS5640292A (en) * | 1979-09-11 | 1981-04-16 | Fujitsu Ltd | Semiconductor laser |
| JPS5736882A (ja) * | 1980-08-15 | 1982-02-27 | Nec Corp | Sutoraipugatadaburuheterosetsugoreezasoshi |
-
1981
- 1981-07-02 GB GB08120465A patent/GB2105099B/en not_active Expired
-
1982
- 1982-05-27 US US06/382,507 patent/US4480331A/en not_active Expired - Fee Related
- 1982-06-25 AU AU85326/82A patent/AU552066B2/en not_active Ceased
- 1982-07-01 JP JP57112632A patent/JPS5810885A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020129756A1 (ja) | 2018-12-21 | 2020-06-25 | 株式会社グリーンズグリーン | 植生シート |
Also Published As
| Publication number | Publication date |
|---|---|
| AU552066B2 (en) | 1986-05-22 |
| JPS5810885A (ja) | 1983-01-21 |
| GB2105099A (en) | 1983-03-16 |
| GB2105099B (en) | 1985-06-12 |
| US4480331A (en) | 1984-10-30 |
| AU8532682A (en) | 1983-01-06 |
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