GB2105099B - Injection laser - Google Patents

Injection laser

Info

Publication number
GB2105099B
GB2105099B GB08120465A GB8120465A GB2105099B GB 2105099 B GB2105099 B GB 2105099B GB 08120465 A GB08120465 A GB 08120465A GB 8120465 A GB8120465 A GB 8120465A GB 2105099 B GB2105099 B GB 2105099B
Authority
GB
United Kingdom
Prior art keywords
injection laser
laser
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08120465A
Other languages
English (en)
Other versions
GB2105099A (en
Inventor
George Horace Brooke Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB08120465A priority Critical patent/GB2105099B/en
Priority to US06/382,507 priority patent/US4480331A/en
Priority to AU85326/82A priority patent/AU552066B2/en
Priority to JP57112632A priority patent/JPS5810885A/ja
Publication of GB2105099A publication Critical patent/GB2105099A/en
Application granted granted Critical
Publication of GB2105099B publication Critical patent/GB2105099B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB08120465A 1981-07-02 1981-07-02 Injection laser Expired GB2105099B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB08120465A GB2105099B (en) 1981-07-02 1981-07-02 Injection laser
US06/382,507 US4480331A (en) 1981-07-02 1982-05-27 Injection laser with an inverted waveguiding rib
AU85326/82A AU552066B2 (en) 1981-07-02 1982-06-25 Transverse mode stabiliser injection laser
JP57112632A JPS5810885A (ja) 1981-07-02 1982-07-01 注入レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08120465A GB2105099B (en) 1981-07-02 1981-07-02 Injection laser

Publications (2)

Publication Number Publication Date
GB2105099A GB2105099A (en) 1983-03-16
GB2105099B true GB2105099B (en) 1985-06-12

Family

ID=10522967

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08120465A Expired GB2105099B (en) 1981-07-02 1981-07-02 Injection laser

Country Status (4)

Country Link
US (1) US4480331A (https=)
JP (1) JPS5810885A (https=)
AU (1) AU552066B2 (https=)
GB (1) GB2105099B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD470627S1 (en) 2002-05-16 2003-02-18 Su-Chen Kuo Cosmetic container

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662983A (en) * 1982-10-26 1987-05-05 American Telephone And Telegraph Company At&T Bell Laboratories Multiple meltback procedure for LPE growth on InP
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPH067618B2 (ja) * 1983-12-26 1994-01-26 株式会社東芝 半導体レ−ザ装置
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
DE3421215A1 (de) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m
JPH0685455B2 (ja) * 1984-07-18 1994-10-26 ソニー株式会社 半導体レーザー
DE3515861C1 (de) * 1985-05-03 1994-03-17 Diehl Gmbh & Co Sensoranordnung für Suchzünder-Submunition
US4647320A (en) * 1985-05-22 1987-03-03 Trw Inc. Method of making a surface emitting light emitting diode
US4694311A (en) * 1985-05-22 1987-09-15 Trw Inc. Planar light-emitting diode
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
JPS6273687A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp 半導体レ−ザ装置
EP0264225B1 (en) * 1986-10-07 1994-01-19 Sharp Kabushiki Kaisha A semiconductor laser device and a method for the production of the same
JPS63150985A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63150986A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPS63164484A (ja) * 1986-12-26 1988-07-07 Sharp Corp 半導体レ−ザ素子
JPS63177495A (ja) * 1987-01-16 1988-07-21 Sharp Corp 半導体レ−ザ素子
JPS63208296A (ja) * 1987-02-24 1988-08-29 Sharp Corp 半導体装置
JPS63271992A (ja) * 1987-04-28 1988-11-09 Sharp Corp 半導体レ−ザ素子
JPS63287082A (ja) * 1987-05-19 1988-11-24 Sharp Corp 半導体レ−ザ素子
JPH01186688A (ja) * 1987-09-02 1989-07-26 Sharp Corp 半導体レーザ装置
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
US5065404A (en) * 1989-07-12 1991-11-12 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
US4989213A (en) * 1989-10-30 1991-01-29 Polaroid Corporation Narrow divergence, single quantum well, separate confinement, algaas laser
US5319661A (en) * 1990-12-27 1994-06-07 The Furukawa Electric Co., Ltd. Semiconductor double heterostructure laser device with InP current blocking layer
US5933743A (en) * 1997-07-03 1999-08-03 Micron Technology, Inc. Method of improving alignment signal strength by reducing refraction index at interface of materials in semiconductors
US6501188B1 (en) 1997-07-03 2002-12-31 Micron Technology, Inc. Method for improving a stepper signal in a planarized surface over alignment topography
JP2001094136A (ja) * 1999-09-22 2001-04-06 Canon Inc 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法
EP3900523A4 (en) 2018-12-21 2022-02-09 Green's Green Co., Ltd. PLANT FILM

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593872B2 (ja) * 1978-12-11 1984-01-26 富士通株式会社 半導体発光装置の製造方法
JPS55128822A (en) * 1979-03-28 1980-10-06 Kokusai Denshin Denwa Co Ltd <Kdd> Method of epitaxial growth at liquid phase
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser
JPS5736882A (ja) * 1980-08-15 1982-02-27 Nec Corp Sutoraipugatadaburuheterosetsugoreezasoshi

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD470627S1 (en) 2002-05-16 2003-02-18 Su-Chen Kuo Cosmetic container

Also Published As

Publication number Publication date
JPS643078B2 (https=) 1989-01-19
AU552066B2 (en) 1986-05-22
JPS5810885A (ja) 1983-01-21
GB2105099A (en) 1983-03-16
US4480331A (en) 1984-10-30
AU8532682A (en) 1983-01-06

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 20010701